Page 1
2012. 11. 27 1/4
SEMICONDUCTOR
TECHNICAL DATA
KMD7D5P40QA
P-Ch Trench MOSFET
Revision No : 2
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as low on resistance, low
gate charge and excellent avalanche characteristiscs. It is mainly suitable for
battery protection circuit.
FEATURES
·V
DSS
=-40V, ID=-7.5A.
·Drain-Source ON Resistance.
R
DS(ON)
=30mΩ(Max.) @ V
GS
=-10V
R
DS(ON)
=37mΩ(Max.) @ V
GS
=-4.5V
·Super High Dense Cell Design
MOSFET Maximum Ratings (Ta=25℃ Unless otherwise noted)
Note : *Surface Mounted on 1 × 1 FR4 Board, t≤10sec
PIN CONNECTION (TOP VIEW)
CHARACTERISTIC SYMBOL RATING UNIT
Drain Source Voltage
V
DSS
-40 V
Gate Source Voltage
V
GSS
±20
V
Drain Current
DC@Ta=25℃
ID*
-7.5 A
Pulsed
I
DP
-30 A
Drain Source Diode Forward Current
I
S
-30 A
Drain Power Dissipation
DC@Ta=25℃
PD*
2.0
W
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55~150
℃
Thermal Resistance, Junction to Ambient
R
thJA
*
62.5
℃/W
H
G
P
D
U
A
8
1
5
B1 B2
4
FLP-8
KMD7D5P
40QA
T
DIM
B1
B2
L
MILLIMETERS
_
A
D
G
H
L
P
T
U 0.1 MAX
+
4.85 0.2
_
+
3.94 0.2
_
+
6.02 0.3
_
+
0.4 0.1
0.15+0.1/-0.05
_
+
1.63 0.2
_
+
0.65 0.2
1.27
0.20+0.1/-0.05
S
1
S
2
S
3
G
4
8
D
7
D
6
D
D
5
1
2
3
4
8
7
6
5
Page 2
2012. 11. 27 2/4
KMD7D5P40QA
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25℃) UNLESS OTHERWISE NOTED
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
VGS=0V, I
DS
=-250μA
-40 - - V
Drain Cut-off Current
I
DSS
VDS=-40V, VGS=0V
- - -10
μA
Gate Leakage Current
I
GSS
V
GS
=±20V, V
DS
=0V
- -
±10 μA
Gate Threshold Voltage
V
th
VDS=V
GS, ID
=-250μA
-1.0 - -3.0 V
Drain-Source ON Resistance
R
DS(ON)*
VGS=-10V, ID=-3.8A
- 24 30
mΩ
VGS=-4.5V, ID=-3.8A
- 29 37
Forward Transconductance
g
fs*
VDS=-10V, ID=-3.8A
- 1.2 - S
Dynamic
Input Capaclitance
C
iss
VDS= 20V, f=MHz, VGS=0V
- 1,480 -
pF
Output Capacitance
C
oss
- 240 -
Reverse Transfer Capacitance
C
rss
- 140 -
Gate Resistance
R
g
VGS=0V, VDS=0V, f=1MHz
- 8 -
Ω
Total Gate Charge
Q
g*
VDS=-32V, VGS=-10V, ID=-7.5A
- 32.0 -
nCGate-Source Charge
Q
gs*
- 5.5 -
Gate-Drain Charge
Q
gd*
- 9.0 -
Turn-On Delay Time
t
d(on)*
VDD=-20V, VGS=-10V
ID=-7.5A, R
g
=4.7Ω
- 11 -
nS
Turn-On Rise Time
t
r*
- 20 -
Turn-Off Delay Time
t
d(off)*
- 60 -
Turn-Off Fall Time
t
f*
- 22 -
Source-Drain Diode Ratings
Source-Drain Forward Voltage
V
SDF*
VGS=0V, IDR=-7.5A,
- - -1.2 V
Note) *Pulse Test : Pulse width ≤ 300㎲ , Duty cycle ≤2%
Page 3
2012. 11. 27 3/4
KMD7D5P40QA
Revision No : 2
Page 4
2012. 11. 27 4/4
KMD7D5P40QA
Revision No : 2
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