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SEMICONDUCTOR
TECHNICAL DATA
KMD6D0DN40Q
Dual N-Ch Trench MOSFET
Revision No : 0
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for DC/DC Converters.
FEATURES
·V
DSS
=40V, ID=6A.
·Drain-Source ON Resistance.
R
DS(ON)
=38mΩ (Max.) @V
GS
=10V
R
DS(ON)
=50mΩ (Max.) @V
GS
=4.5V
·Super High Dense Cell Design
·Very fast switching
MAXIMUM RATING (Ta=25℃ Unless otherwise noted)
* : Surface Mounted on FR4 Board (25mm×25mm, 1.5t, t≤10sec)
CHARACTERISTIC SYMBOL RATING UNIT
Drain Source Voltage
V
DSS
40 V
Gate Source Voltage
V
GSS
±12
V
Drain Current
T
a
=25℃
ID *
6 A
Pulsed(Note1)
I
DP
24 A
Peak Diode Recovery dv/dt (Note 2) dv/dt 4.5 V/ns
Peak Diode Recovery di/dt di/dt 200 A/us
Single pulsed Avalanche Energy (Note 3)
E
AS
66 mJ
Repetitive Avalanche Energy (Note 1)
E
AR
2.7 mJ
Maximum Junction Temperature
T
j
-50~150
℃
Storage Temperature Range
T
stg
-50~150
℃
Thermal Resistance, Junction to Ambient
R
thJA
*
62.5
℃/W
H
P
D
A
8
1
5
4
T
G
B2
B1
FLP-8
Marking
KMD6D0DN
40Q
101
L
A
B1
B2
D
G
H
L
P
Type Name
Lot No.
MILLIMETERSDIM
_
4.85 0.2
+
_
3.94 0.2
+
_
6.02 0.3
+
_
+
0.4 0.1
0.15+0.1/-0.05
_
1.63 0.2
+
_
0.65 0.2
+
1.27
0.20+0.1/-0.05T
PIN CONNECTION (TOP VIEW)
8
D
1
7
D
1
6
D
2
D
5
2
1
2
3
4
S
1
1
G
2
1
S
3
2
G
4
2
8
7
6
5
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KMD6D0DN40Q
Revision No : 0
ELECTRICAL CHARACTERISTICS (Tj=25℃) UNLESS OTHERWISE NOTED
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250μA, V
GS
=0V
40 - - V
Drain Cut-off Current
I
DSS
VDS=40V, VGS=0V
- - 1
μA
Gate Leakage Current
I
GSS
V
GS
=±12V, V
DS
=0V
- -
±10 μA
Gate Threshold Voltage
V
th
VDS=V
GS, ID
=250μA
1.0 2.0 2.5 V
Drain-Source ON Resistance
R
DS(ON)
VGS=10.0V, ID=6A
- 27 38
mΩ
VGS=4.5V, ID=5A
- 35 50
Forward Transconductance
g
fs
VDS=10V, ID=6A(Note4, 5)
- 10 - S
Dynamic
Input Capacitance
C
iss
VDS=15V, f=1MHz, VGS=0V
- 460 -
pFOuput Capacitance
C
oss
- 80 -
Reverse Transfer Capacitance
C
rss
- 50 -
Total Gate Charge
Q
g
VDS=20V, VGS=10V, ID=6A (Note4, 5)
- 8.0 -
nCGate-Source Charge
Q
gs
- 1.5 -
Gate-Drain Charge
Q
gd
- 2.0 -
Total Gate Charge
Q
g
VDS=20V, VGS=5V, ID=6A (Note4, 5)
- 4.1 -
nC
Turn-On Delay Time
t
d(on)
VDD=20V, VGS=10V
ID=6A, R
G
=6Ω (Note4, 5)
- 12 -
ns
Turn-On Rise Time
t
r
- 8 -
Turn-Off Delay Time
t
d(off)
- 35 -
Turn-Off Fall Time
t
f
- 6 -
Source-Drain Diode Ratings
Source-Drain Forward Voltage
V
SDF
IDR=6A, VGS=0V
- 0.87 1.2 V
Note1) Repetivity rating : Pulse width Limited by juntion temperature.
Note2) I
S
≤6A, dI/dt≤100A/㎲, VDD≤BV
DSS
, Starting Tj = 25℃.
Note3) L = 1mH, I
AS
= 6A, V
DD
= 32V, Rg = 25Ω, Starting Tj = 25℃.
Note4) Pulse test : Pulse width
≤ 300㎲ , Duty cycle ≤ 2%
Note5) Essentially independenl of operating temperature.
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KMD6D0DN40Q
Revision No : 0
(A)
D
Fig1. I
20
VGS=10
16
VGS=5
D
VGS=4.5
- V
DS
12
8
Drain Current I
4
0
(A)
D
0
2
10
Common Source
V
Pulse Test
1
10
100
DS
=10V
C
2
Drain -
46810
Source Voltage VDS (V)
Fig3. I
D
25
C
- V
Drain Current I
0
10
234 1056789
GS
Common Source
C
Tc= 25
Pulse Test
VGS=4.0
VGS=3.5
VGS=3.0
Fig2. R
0.16
(Ω)
0.14
DS(ON)
0.12
Common Source
C
Tc= 25
Pulse Test
0.1
0.08
0.06
0.04
Source On Resistance R
0.02
0
Drain
Drain Current I
Fig4. R
100
Common Source
=10V
V
DS
Pulse Test
80
60
(mΩ)
40
DS(ON)
Source On Resistance
R
20
Drain
0
- I
V
=
S
G
DS(on)
4.5
D
VGS=10V
10 1505 20
(A)
D
- T
DS(on)
j
0 16012080-40 40-80
Gate - Source Voltage VGS (V)
Fig5. V
5
Common Source
V
(V)
th
Gate Threshold Voltage V
GS=VDS
ID=250µA
4
Pulse Test
3
2
1
0
-80 -40 40 80 1601200
Junction Temperature Tj ( )
th
- T
Junction Temperature Tj ( )
j
2
10
1
10
0
10
Common Drain
V
GS
Pulse Test
100
C
(A)
DR
Reverse Drain Current I
Fig6. I
=0V
- V
DR
25
C
C
SDF
0.4 0.6 0.8 2.01.0 1.2 1.4 1.6 1.8
C
Source - Drain Forward Voltage V
SDF
(V)
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KMD6D0DN40Q
Revision No : 0
)
Fig7. Qg - V
12
10
8
6
4
2
002
ID=6A
468 1610 12 14
Gate -
10
(V)
GS
Gate-Source Voltage V
Charge Qg (nC)
2
GS
VDS=20V
2
10
Operation in this
area is limited by R
1
10
(A)
D
0
10
-1
10
Drain Current I
2
10
10
Tc= 25
C
C
Tj = 150
Single pulse
-1
Drain - Source Voltage V
Fig9. Transient Thermal Response Curve
Fig8. Safe Operation Area
DS(ON)
0
10
1
10
(V)
DS
10µs
100µs
1ms
10ms
100ms
DC
2
10
Transient Thermal Resistance (Ƅ.W)
10
10
10
Single Pluse
1
0.01
0.02
0.05
0
0
0.2
-1
-4
10
.1
0.5
P
DM
t
1
t
2
Duty Cycle D = t1/t
-3
10
-2
10
-1
10
0
10
2
1
10
TIME (sec
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KMD6D0DN40Q
Revision No : 0
Fig. 10 Gate Charge
I
D
0.8 V
DSS
1.0 mA
Schottky
Diode
V
GS
V
GS
10 V
I
D
V
DS
Q
gs
Q
gd
Q
g
Q
Fig. 11 Resistive Load Switching
0.5 V
DSS
6Ω
10 V
V
GS
V
R
L
V
DS
DS
V
GS
10%
t
d(on)
90%
t
t
r
t
on
d(off)
t
f
t
off
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