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2008. 12. 19 1/5
SEMICONDUCTOR
TECHNICAL DATA
KMC7D0CN20CA
Common N-Ch Trench MOSFET
Revision No : 3
General Description
Switching regulator and DC-DC Converter applications.
It’s mainly suitable for Li-ion battery pack.
FEATURES
V
DSS
=20V, ID=7A.
Low Drain to Source On Resistance.
: R
DS(ON)
=20.5m (Max.) @ VGS=4.5V
: R
DS(ON)
=21.0m (Max.) @ VGS=4.0V
: R
DS(ON)
=22.5m (Max.) @ VGS=3.1V
: R
DS(ON)
=26.0m (Max.) @ VGS=2.5V
ESD Protection.
Super High Dense Cell Design.
MAXIMUM RATING (Ta=25 )
Note > *Surface Mounted on 1” 1” FR4 Board, t≤10sec
CHARACTERISTIC SYMBOL RATING UNIT
Drain to Source Voltage
V
DSS
20 V
Gate to Source Voltage
V
GSS
12
V
Drain Current
DC
ID *
7
A
Pulsed
I
DP
*
28
Source to Drain Diode Current
IS *
1.7 A
Drain Power Dissipation
Ta = 25
PD *
1.5 W
Maximum Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Thermal Resistance, Junction to Ambient
R
thJA
*
83.3
/W
Marking
C
58
14
0.25
E1
E
GAUGE
PLANE
L
D
B
DIM MILLIMETERS
A1
E1
TSSOP-8
A
A1
1.2 MAX
A
0.15 MAX
_
B
C
D
E
L
+
0.28 1
0.65 Typ.
_
+
3.0 0.10
_
6.40 0.20
+
_
+
4.40 0.10
_
+
0.50 0.20
PIN CONNECTION (TOP VIEW)
D
S
S
G
1
1
2
3
1
4
1
D
8
7
6
5
1
S
2
2
S
3
2
G
4
2
Rg Rg
8
7
6
5
Type Name
KMC7D0
CN20CA
Lot No.
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2008. 12. 19 2/5
KMC7D0CN20CA
Revision No : 3
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note > *Pulse test : Pulse width 300 , Duty Cycle 2%.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain to Source Breakdown Voltage
BV
DSS
VGS=0V, ID=250 A
20 - - V
Drain Cut-off Current
I
DSS
VDS=16V, VGS=0V
- - 1
A
Gate to Source Leakage Current
I
GSS
VGS= 10V, VDS=0V
- -
10 A
Gate Threshold Voltage
V
th
VDS=V
GS, ID
=250 A
0.5 0.7 1.5 V
Drain to Source On Resistance
R
DS(ON)
*
VGS=4.5V, ID=4.0A
- 16.5 20.5
m
VGS=4.0V, ID=3.0A
- 17.0 21.0
VGS=3.1V, ID=3.0A
- 18.5 22.5
VGS=2.5V, ID=3.0A
- 20.5 26.0
Gate Resistance
R
g
f=1MHz - 2.5 -
k
Forward Transconductance
gfs* VDS=5V, ID=5A
- 12 - S
Dynamic
Total Gate Charge
Qg*
VDS=10V, ID=7A
V
GS
=4.0V
- 6.7 nCGate to Source Charge
Qgs*
- 0.8 -
Gate to Drain Charge
Qgd*
- 3.2 -
Turn-On Delay Time
t
d(on)
VDD=10V, VGS=4.0V
I
D
=4.0A, RG=6
- 1.0 -
s
Turn-On Rise Time
t
r
- 2.1 -
Turn-Off Delay Time
t
d(off)
- 8.5 -
Turn-Off Fall Time
t
f
- 7.5 -
Source to Drain Diode Ratings
Source to Drain Diode Forward Voltage
VSD* VGS=0V, IS=1.7A
- 0.8 1.2 V
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2008. 12. 19 3/5
KMC7D0CN20CA
Revision No : 3
30
24
(A)
D
18
12
Drain Current I
6
0
0
30
24
(A)
D
18
12
6
Drain Current I
0
Fig 1. ID - V
VGS=4.5,4.0,3.1,2.5V
1
2345
DS
Drain to Source Voltage VDS (V)
Fig 3. ID - V
125
25
-25
1.0 2.00 0.5 1.5 2.5
GS
C
C
C
VGS=2V
Fig 2. R
30
Common Source
=25
Ta
C
Pulse Test
25
20
(mΩ)
15
DS(ON)
10
R
5
Drain to Source On-Resistance
0
6120302418
Drain Current I
Fig 4. R
50
ID= 4A
Pulse Test
40
30
(mΩ)
20
DS(ON)
R
10
Drain to Source On-Resistance
0
-75 -50 -25 25 50 75 1501251000
DS(ON)
VGS=2.5V
DS(ON)
VGS=2.5V
VGS=4.5V
- I
D
VGS=4.5V
(A)
D
- T
j
Gate to Source Voltage VGS (V)
Fig 5. Vth - T
2.0
Common Source
(V)
V
Pulse Test
th
1.6
1.2
0.8
0.4
Gate Threshold Voltage V
0
-75 -50 -25
= 250µA
= V
GS
DS, ID
05010025 15012575
Junction Temperature Tj ( )
Junction Temperature Tj ( )
j
Fig 6. IS - V
C
SD
100
(A)
S
10
1
0.1
85
C
25
C
-40
C
Reverse Drain Current I
0.01
C
Source to Drain Forward Voltage V
0.50.3
0.9 1.51.30.7 1.10.1
(V)
SD
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2008. 12. 19 4/5
KMC7D0CN20CA
Revision No : 3
4
10
VGS = 0
MHz
f =1
3
10
2
10
Capacitance C (pF)
1
10
-2
10
Drain to Source Voltage VDS (V)
2
(A)
D
10
10
Operating in this area is
Limited by R
1
-1
10
Fig 7. C - V
C
oss
C
rss
DS
C
iss
1
10
1
Fig 9. Safe Operating Area
DS(ON)
200µs
1ms
Fig 8. V
5
V
= 10V
DS
ID = 7A
(V)
GS
Gate to Source Voltage V
2
10
4
3
2
1
0
3.0 6.004.57.51.5
Gate Charge
- Q
GS
Qg (nC)
g
1
-1
10
Drain Current I
10
VGS = 4.5V
Single Pulse
Ta = 25 C
-2
-2
10
10
10ms
100ms
1
10
DC
-1
10
1
Drain to Source Voltage VDS (V)
Fig 10. Transient Thermal Response Curve
1
10
Duty Cycle 0.5
1
0.2
0.1
-1
10
0.05
0.02
10
-2
-3
10
Single Pulse
-2
10
Normalized Transient Thermal Resistance
2
P
DM
t
1
t
2
- Duty Cycle, D=t1/t2
T
- R
thJA
-1
10
1
1
10
10
- T
j(max)
=
2
a
P
D
3
10
Square Wave Pulse Duration tw (sec)
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2008. 12. 19 5/5
KMC7D0CN20CA
Revision No : 3
Fig 11. Gate Charge
I
D
0.5 V
DSS
1.0 mA
Schottky
Diode
V
GS
V
GS
10 V
I
D
V
DS
Q
gs
Q
gd
Q
g
Q
Fig 12 . Resistive Load Switching
0.5 V
DSS
6Ω
4.0 V
V
GS
V
R
L
V
DS
DS
V
GS
10%
t
d(on)
90%
t
t
r
t
on
d(off)
t
f
t
off
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