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2009. 6. 4 1/4
SEMICONDUCTOR
TECHNICAL DATA
KMC6D5CN20CA
Common N-Ch Trench MOSFET
Revision No : 0
General Description
This Device is a Dual N-Channel MOSFET designed for use as a bi-
directional load switch, facilitated by its commom-drain configuration.
It′s mainly suitable for Li-ion battery pack.
FEATURES
V
DSS
=20V, ID=6.5A.
Low Drain to Source On Resistance.
: R
DS(ON)
=24.0m (Max.) @ VGS=4.5V
: R
DS(ON)
=25.0m (Max.) @ VGS=4.0V
: R
DS(ON)
=27.0m (Max.) @ VGS=3.1V
: R
DS(ON)
=32.0m (Max.) @ VGS=2.5V
ESD Protection.
Super High Dense Cell Design.
MAXIMUM RATING (Ta=25 )
Note 1) Surface Mounted on 1″ 1″FR4 Board, t≤10sec
CHARACTERISTIC SYMBOL RATING UNIT
Drain to Source Voltage
V
DSS
20 V
Gate to Source Voltage
V
GSS
12
V
Drain Current
DC@Ta = 25℃(Note1)
I
D
6.5
A
Pulsed
I
DP
26
Drain Power Dissipation
@Ta = 25℃(Note1)
P
D
1.5 W
Maximum Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Thermal Resistance, Junction to Ambient(Note1)
R
thJA
83.3
/W
Marking
C
58
14
0.25
E1
E
GAUGE
PLANE
L
D
B
DIM MILLIMETERS
A1
E1
TSSOP-8
A
A1
1.2 MAX
A
0.15 MAX
_
B
C
D
E
L
+
0.28 1
0.65 Typ.
_
+
3.0 0.10
_
6.40 0.20
+
_
+
4.40 0.10
_
+
0.50 0.20
PIN CONNECTION (TOP VIEW)
D
S
S
G
1
1
2
3
1
4
1
D
8
7
6
5
1
S
2
2
S
3
2
G
4
2
Rg Rg
8
7
6
5
Type Name
KMC6D5
CN20CA
Lot No.
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2009. 6. 4 2/4
KMC6D5CN20CA
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note2) Pulse test : Pulse width 300 , Duty Cycle 2%.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain to Source Breakdown Voltage
BV
DSS
VGS=0V, ID=250 A
20 - - V
Drain Cut-off Current
I
DSS
VDS=20V, VGS=0V
- - 1
A
Gate to Source Leakage Current
I
GSS
VGS= 12V, VDS=0V
- -
10 A
Gate Threshold Voltage
V
th
VDS=V
GS, ID
=250 A
0.5 - 1.5 V
Drain to Source On Resistance
R
DS(ON)
VGS=4.5V, ID=3.0A (Note2)
- 21.5 24.0
m
VGS=4.0V, ID=3.0A (Note2)
- 22.5 25.0
VGS=3.1V, ID=3.0A (Note2)
- 24.5 27.0
VGS=2.5V, ID=3.0A (Note2)
- 28.5 32.0
Gate Resistance
R
g
f=1MHz - 2.5 -
k
Forward Transconductance
g
fs
VDS=5V, ID=6.5A (Note2)
- 28 - S
Dynamic
Total Gate Charge
Q
g
VDS=10V, ID=6.5A
V
GS
=4.0V (Note2)
- 4.6 -
nCGate to Source Charge
Q
gs
- 1.0 -
Gate to Drain Charge
Q
gd
- 2.6 -
Turn-On Delay Time
t
d(on)
VDS=10V, VGS=4.0V
I
D
=4.0A, RG=6 (Note2)
- 1.0 -
s
Turn-On Rise Time
t
r
- 1.8 -
Turn-Off Delay Time
t
d(off)
- 7.0 -
Turn-Off Fall Time
t
f
- 6.0 -
Source to Drain Diode Ratings
Source to Drain Diode Forward Voltage
V
SD
VGS=0V, IS=1.7A (Note2)
- 0.8 1.2 V
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2009. 6. 4 3/4
KMC6D5CN20CA
Revision No : 0
30
VGS=4.5,4.0,3.1V
24
(A)
D
18
12
Drain Current I
6
0
0
30
24
(A)
D
18
12
6
Drain Current I
0
0.5
Fig 1. ID - V
1 1.5 2 2.5 3
DS
2.5V
2.0V
Drain to Source Voltage VDS (V)
Fig 3. ID - V
25
C
150
C
1302 4
Tj=-55
GS
C
Fig 2. R
50
40
30
(mΩ)
20
DS(ON)
R
10
VGS=2.5V
Drain to Source On-Resistance
0
6120302418
Drain Current I
Fig 4. R
2.0
1.8
DS(ON)
1.6
1.4
1.2
1.0
0.8
0.6
Normalized On-Resistance R
0.4
-75 -50 -25 25 50 75 1751501251000
VGS=4.5V, ID=3A
DS(ON)
DS(ON)
- I
D
VGS=4.5V
(A)
D
- T
j
VGS=2.5V, ID=3A
Gate to Source Voltage VGS (V)
Fig 5. Vth - T
1.6
(V)
th
VGS = V
1.4
1.2
1.0
0.8
0.6
0.4
Gate Threshold Voltage V
0.2
-75 -50 -25
= 250µA
DS, ID
05010025 17515012575
Junction Temperature Tj ( )
Junction Temperature Tj ( )
j
100
(A)
S
10
1
Fig 6. IS - V
150
C
25
C
SD
Tj=-55
C
C
Reverse Drain Current I
0.1
C
Source to Drain Forward Voltage V
0.60.40.2
1.0 1.20.8
(V)
SD
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2009. 6. 4 4/4
KMC6D5CN20CA
Revision No : 0
Gate Charge
Qg (nC)
Fig8. C - V
DS
Drain to Source Voltage V
DS
(V)
0
5
3
1
2
4
4.83.61.2 2.406
Fig9. Qg - V
GS
Capacitance C (pF)
Gate to Source Voltage V
GS
(V)
0
400
1000
800
600
200
C
oss
C
iss
ID=6.5A
C
rss
f = 1MHz
6
0
4
20
1612
V
DS
= 10V
ID =
6.5
A
Fig10. Transient Thermal Response Curve
Drain Current I
D
(A)
Drain to Source Voltage V
DS
(V)
Fig10. Safe Operation Area
10
-2
10
-2
10
-1
10
0
10
1
10
2
10
-1
10
0
10
2
10
1
1ms
200µs
10ms
100ms
DC
VGS=4.5V
SINGLE PULSE
T
a
= 25 C
R
DS(ON)
Limited
Square Wave Pulse Duration tw (sec)
10
1
10
2
10
3
10
-3
10
-2
10
-1 10
0
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Normalized Effective Transient Thermal Resistance
0.02
0.01
0.1
0.2
0.05
Single Pulse
t
1
t
2
P
DM
1. Duty Cycle D = t1/t
2
2. R
thJA
=111 C/W
Duty Cycle = 0.5
Fig7. R
DS(ON)
- V
GS
0
20
10
50
40
30
1.5
4.5
3.5
2.5
Gate to Source Voltage VGS (V)
Drain to
Source On Resistance R
DS(ON)
(mΩ)
Tj=25
C
Tj=150
C
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