Datasheet kmb8d2n60qa Datasheet

2007. 9. 3

1/4

SEMICONDUCTOR

TECHNICAL DATA

KMB8D2N60QA

N-Ch Trench MOSFET

Revision No : 1

GENERAL DESCRIPTION

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Back-light Inverter.

FEATURES

V

DSS

=60V, ID=8.2A.

Drain-Source ON Resistance.

R

DS(ON)

=22m (Max.) @ VGS=10V

R

DS(ON)

=27m (Max.) @ VGS=4.5V

Super High Dense Cell Design

MOSFET Maximum Ratings (Ta=25 Unless otherwise noted)

B2

G

H

B1

1

4

5

8

A

P

D

L

T

FLP-8

0.20+0.1/-0.05T

P

1.27

MILLIMETERSDIM

A

4.85 0.2

+

_

B1

3.94 0.2

+

_

B2

6.02 0.3

+

_

D

0.4 0.1

+

_

G

0.15+0.1/-0.05

H

1.63 0.2

+

_

L

0.65 0.2

+

_

Note : *Surface Mounted on 1 1 FR4 Board

PIN CONNECTION (TOP VIEW)

CHARACTERISTIC SYMBOL PATING UNIT

Drain Source Voltage

V

DSS

60 V

Gate Source Voltage

V

GSS

20

V

Drain Current

DC@TA=25

ID*

8.2 A

DC@TA=70

6.6 A

Pulsed

I

DP

40 A

Drain Source Diode Forward Current

I

S

3.0 A

Drain Power Dissipation

TA=25

PD*

3.0

W

TA=70

2.0

W

Maximum Junction Temperature

T

j

150

Storage Temperature Range

T

stg

-55~150

Thermal Resistance, Junction to Ambient

R

thJA

*

41

/W

KMB8D2N 60QA

8

7

6

5

D

S

1

S

2

S

G

3

4

1

2

3

4

8

7

6

5

2007. 9. 3

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KMB8D2N60QA

Revision No : 1

ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage

BV

DSS

VGS=0V, IDS=250 A

60 - - V

Drain Cut-off Current

I

DSS

VDS=48V, VGS=0V

- - 1 A

VDS=48V, VGS=0V, Tj=70

- - 5

Gate Leakage Current

I

GSS

VGS= 20V, VDS=0V

- -

100

nA

Gate Threshold Voltage

V

th

VDS=V

GS, ID

=250 A

1.0 - 3.0 V

Drain-Source ON Resistance

R

DS(ON)*

VGS=10V, ID=8.2A

- 16 22

m

VGS=4.5V, ID=7.6A

- 20 27

Forward Transconductance

G

fs*

VDS=5V, ID=8.2A

- 2.4 - S

Dynamic

Input Capaclitance

C

iss

VDS=30V, VGS=0V, f=1MHz

- 1920 2300

pFOuput Capacitance

C

oss

- 155 -

Reverse Transfer Capacitance

C

rss

- 116 -

Total Gate Charge (VGS=10V)

Q

g*

VDS=30V, VGS=10V, ID=8.2A

- 47.6 58

nC

Total Gate Charge (VGS=4.5V)

- 24.2 30

Gate-Source Charge

Q

gs*

- 6.0 -

Gate-Drain Charge

Q

gd*

- 14.4 -

Turn-On Delay Time

t

d(on)*

VDD=30V, VGS=10V R

L

=3.6 , RG=3

- 8.2 -

ns

Turn-On Rise Time

t

r*

- 5.5 -

Turn-Off Delay Time

t

d(off)*

- 29.7 -

Turn-Off Fall Time

t

f*

- 5.2 -

Source-Drain Diode Ratings

Source-Drain Forward Voltage

V

SDF*

VGS=0V, IDR=1.7A,

- 0.74 1.0 V

Note

1. Pulse Test : Pulse width

10 , Duty cycle 1%

2007. 9. 3

3/4

KMB8D2N60QA

Revision No : 1

40

VGS=8V, 10V

VGS=6V

30

(A)

D

Drain Current I

40

30

(A)

D

20

10

0

VGS=5.5V

Common Source V

DS

Pulse Test

4

Fig1. ID - V

8121620

DS

Common Source Ta=25 Pulse Test

Drain - Source Voltage VDS (V)

Fig3. ID - V

=5V

GS

C

VGS=4.0V

VGS=3.5V

50

40

30

20

10

Common Source Ta=25 Pulse Test

)

Ω

(m

DS(ON)

On-Resistance R

0

60

)

Ω

(m

DS(ON)

50

40

30

Common Source V

=10V

GS

Pulse Test

Fig2. R

C

10

Drain Current I

Fig4. R

- I

DS(ON)

VGS=4.5V

VGS=10V

20 30 40 50

DS(ON)

(A)

D

- T

D

j

10

Drain Current I

0

12 435

Gate Source Voltage VGS (V)

Fig5. Vth - T

5

(V)

th

4

3

2

1

Gate Threshold Voltage V

0

012515017575 10050-25 25-50-75

150

C

25

-55

C

j

Common Source V

GS=VDS

I

=250µA

D

Pulse Test

20

10

On-Resistance R

0

40

Common Source Ta=25 Pulse Test

30

(A)

D

20

10

Drain Current I

0

012515017575 10050-25 25-50-75

Junction Temperature Tj ( )

Fig 6. IS - V

C

0.40

SDF

1.20.8 2.01.6

C

Junction Temperature Tj ( )

C

Source-Drain Forward Voltage V

SDF

(V)

2007. 9. 3

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KMB8D2N60QA

Revision No : 1

Fig7. VGS - Q

10

(V)

GS

VDS=30V

ID=8.2A

8

6

4

2

Gate to Source Voltage V

0

Gate Charge Q

Fig9. Safe Operation Area

2

10

1

10

(A)

D

0

10

Drain Current I

10

Operation in this area is limited by R

-1

VGS=10V

SINGLE PULSE

= 25 C

T

A

-2

10

-1

10

20100

DS(ON)

g

Fig8. C - V

DS

3500

3000

f=1MHz

2500

2000

Ciss

1500

1000

Capacitance C (pF)

500

40 5030

(nC)

g

100µs

1ms

10ms

100ms

1s

10s

DC

0

10

1

10

2

10

Coss

Crss

0

1050

20 25 3015

Drain - Source Voltage V

DS

(V)

Drain - Source Voltage V

(V)

DS

Fig10. Transient Thermal Response Curve

0

10

0.5

0.2

0.1

-1

10

0.05

0.02

Rth( C/W)

-2

10

0.01

SINGLE

-3

10

-4

Normalized Effective Transient Thermal Resistance

10

-3

10

-2

10

Square Wave Pulse Duration (sec)

P

DM

- Duty cycle D = t1/t

-1

10

0

10

10 10

t

1

t

2

10

3