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SEMICONDUCTOR
TECHNICAL DATA
KMB8D0P30QA
P-Ch Trench MOSFET
Revision No : 0
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low
on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly
suitable for Load Switch and Battery pack.
FEATURES
·V
DSS
=-30V, ID=-8A.
·Drain to Source On Resistance.
R
DS(ON)
=20mΩ(Max.) @ V
GS
=-10V
R
DS(ON)
=35mΩ(Max.) @ V
GS
=-4.5V
MOSFET Maximum Ratings (Ta=25℃ Unless otherwise noted)
FLP-8
0.20+0.1/-0.05
P
T
1.27
U 0.1 MAX
MILLIMETERS
0.4 0.1
0.15+0.1/-0.05
4.85 0.2
B2
G
H
L
D
A
B1
DIM
6.02 0.3
1.63 0.2
0.65 0.2
3.94 0.2
+
_
+
_
+
_
+
_
+
_
+
_
G
H
B1 B2
1
4
5
8
A
P
D
L
T
U
Note1) Surface Mounted on 1″×1″FR4 Board, t≤10sec.
PIN CONNECTION (TOP VIEW)
CHARACTERISTIC SYMBOL RATING UNIT
Drain to Source Voltage
V
DSS
30 V
Gate to Source Voltage
V
GSS
±20
V
Drain Current
DC@Ta=25℃ (Note 1)
I
D
-8 A
Pulsed
I
DP
-40 A
Drain Power Dissipation
@Ta=25℃ (Note 1)
P
D
2.5
W
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55~150
℃
Thermal Resistance, Junction to Ambient (Note 1)
R
thJA
50
℃/W
KMB8D0P
30QA
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
D
1
2
3
4
8
7
6
5
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KMB8D0P30QA
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25℃) UNLESS OTHERWISE NOTED
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain to Source Breakdown Voltage
BV
DSS
VGS=0V, I
D
=-250μA
-30 - - V
Drain Cut-off Current
I
DSS
VGS=0V, VDS=-24V
- - -1
μA
Gate to Source Leakage Current
I
GSS
V
GS
=±20V, V
DS
=0V
- -
±100
nA
Gate to Source Threshold Voltage
V
th
VDS=V
GS, ID
=-250μA
-1.0 - -3.0 V
Drain to Source On Resistance
R
DS(ON)
VGS=-10V, ID=-8A (Note2)
- 15 20
mΩ
VGS=-4.5V, ID=-5A (Note2)
- 25 35
Forward Transconductance
g
fs
VDS=-5V, ID=-8A (Note2)
- 6 - S
Dynamic
Input Capaclitance
C
iss
VDS=-15V, VGS=0V, f=1MHz (Note2)
- 1371 -
pFOuput Capacitance
C
oss
- 295 -
Reverse Transfer Capacitance
C
rss
- 176 -
Total Gate Charge
VGS=10V
Q
g
VDS=-15V, VGS=-10V, ID=-8A (Note2)
- 28.2 -
nC
VGS=4.5V
- 15.0 -
Gate to Source Charge
Q
gs
- 5.0 -
Gate to Drain Charge
Q
gd
- 6.4 -
Turn-On Delay Time
t
d(on)
VDS=-15V, VGS=-10V
ID=-8A, R
G
=1.6Ω (Note2)
- 11.2 -
ns
Turn-On Rise Time
t
r
- 5.8 -
Turn-Off Delay Time
t
d(off)
- 65.0 -
Turn-Off Fall Time
t
f
- 25.0 -
Source to Drain Diode Ratings
Source to Drain Forward Voltage
V
SD
VGS=0V, IS=-1.7A (Note2)
- -0.75 -1.2 V
Note2) Pulse Test : Pulse Width≤300㎲, Duty Cycle≤2%
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KMB8D0P30QA
Revision No : 0
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KMB8D0P30QA
Revision No : 0
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