Datasheet kmb7d1dp30qa Datasheet

2007. 4. 17 1/5

SEMICONDUCTOR

TECHNICAL DATA

KMB7D1DP30QA

Dual P-Ch Trench MOSFET

Revision No : 0

General Description

This Trench MOSFET has better characteristics, such as fast switching

time, low on resistance, low gate charge and excellent avalanche

characteristics. It is mainly suitable for portable equipment and Load

Switch.

FEATURES

V

DSS

=-30V, ID=-7.1A

Drain-Source ON Resistance

R

DS(ON)

=25m (Max.) @ VGS=-10V

R

DS(ON)

=41m (Max.) @ VGS=-4.5V

Super Hige Dense Cell Design

MAXIMUM RATING (Ta=25 )

Note : Surface Mounted on FR4 Board, t 10sec.

PIN CONNECTION (TOP VIEW)

CHARACTERISTIC SYMBOL N-Ch UNIT

Drain-Source Voltage

V

DSS

-30 V

Gate-Source Voltage

V

GSS

20

V

Drain Current

DC@TA=25

I

D

-7.1

A

DC@TA=70

-5.7

Pulsed

I

DP

-40

Drain-Source-Diode Forward Current

I

S

-1.7 A

Drain Power Dissipation

TA=25

P

D

1.1 W

TA=70

0.7

Maximum Junction Temperature

T

j

150

Storage Temperature Range

T

stg

-55 150

Thermal Resistance, Junction to Ambient

R

thJA

110

/W

H

P

D

A

8

1

5

4

T

G

B1

B2

B1

FLP-8

L

A

D

G

H

L

P

MILLIMETERSDIM

_

4.85 0.2

+

_

3.94 0.2

+ _

6.02 0.3

+

_

+

0.4 0.1

0.15+0.1/-0.05

_

1.63 0.2

+ _

0.65 0.2

+

1.27

0.20+0.1/-0.05T

S

1

G

2

1

S

3

2

G

4

2

8

D

1

7

D

1

6

D

2

D

5

2

1

2

3

4

KMB7D1DP 30QA

8

7

6

5

705

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KMB7D1DP30QA

Revision No : 0

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage

BV

DSS

IDS=-10 A, VGS=0V,

-30 - - V

Drain Cut-off Current

I

DSS

VGS=0V, VDS=-30V

- - -1 A

VGS=0V, VDS=-30V, Tj=55

- - -25

Gate Leakage Current

I

GSS

VGS= 20V, VDS=0V

- -

100

nA

Gate Threshold Voltage

V

th

VDS=V

GS, ID

=-250 A

-1 - -3 V

Drain-Source ON Resistance

R

DS(ON)

*

VGS=-10V, ID=-7.1A

- 20 25

m

VGS=-4.5V, ID=-5.5A

- 33 41

Forward Transconductance

gfs* VDS=-10V, ID=-7.1A

- 20 - S

Dynamic

Input Capaclitance

C

iss

VDS=15V, f=1MHz, VGS=OV

- 1550 -

pFOuput Capacitance

C

oss

- 420 -

Reverse Transfer Capacitance

C

rss

- 380 -

Total Gate Charge

Qg*

VDS=-15V, VGS=-10V, ID=-7.1A

- 33 50

nCGate-Source Charge

Qgs*

- 5.4 -

Gate-Drain Charge

Qgd*

- 8.9 -

Turn-On Delay Time

t

d(on)

*

VDD=-15V, VGS=-10V

I

D

=-1A, RG=6

- 9 15

ns

Turn-On Rise Time

tr*

- 12 20

Turn-Off Delay Time

t

d(off)

*

- 60 90

Turn-Off Fall Time

tf*

- 34 50

Source-Drain Diode Ratings

Source-Drain Forward Voltage

V

SDF

* VGS=0V, IDR=-1.7A

- -0.8 -1.2 V

* : Pulse Test : Pulse width <300 , Duty cycle < 2%

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KMB7D1DP30QA

Revision No : 0

10V

(A)

D

Drain Current I

4

40

Common Source VDS=5V Pulse Test

30

(A)

D

20

Fig1. V

4.5V

4.0V

0.4

3.5V

DS

- I

D

Drain - Source Voltage VDS (V)

Fig3. V

GS

- I

D

3.0V

2.5V

VGS=2.0V

Fig2. R

200

(Ω)

Source On Resistance R

Drain

Source

DS(ON)

100

50

40

(mΩ)

30

DS(ON)

20

Common Source Tc=25 Pulse Test

0

Common Source

=10V, ID=7A

V

DS

Pulse Test

C

4

Drain - Current ID (A)

VGS=4.5V

VGS=10V

DS(on)

- I

- T

D

j

DS(ON)

8121620

Fig4. R

10

Drain Current I

0

01

125

Gate-Source Volatage VGS (V)

Fig5. V

5

Common Source V

(V)

th

Gate Threshold Voltage V

GS=VDS

ID=250µA

4

Pulse Test

3

2

1

0

-75 -50 -25 0 50 10075 125 15025

25

C

2345

th

- T

-55

j

C

10

Normalized Drain-

On-Resistance R

0

10

8

(A)

D

6

4

Drain Current I

2

0

-25 15050 75 100 12525-50 0-75

Junction Temperature Tj ( )

Fig6. IS-V

0.6 1.00 0.2 1.4 1.8

C

SDF

Junction Temperature Tj ( )

C

Source - Drain Forward Voltage V

SDF

(V)

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KMB7D1DP30QA

Revision No : 0

Fig7. Transient Thermal Response Curve

1

0.5

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE

0.005

NORMALIZED EFFECTIVE

0.002

0.001

TRANSIENT THER MAC RESISTANCE

-3

10

-2

10

-1

10

TIME t (sec)

P

DM

t

1

t

2

- Duty = t/T

0

10

10 10

2

300

100

R

DS(ON)

10

(A)

D

1

0.1

Drain Current I

VGS= 10V SINGLE PULSE T

0.01

A

= 25

Fig8. Safe Operation Area

LIMIT

100ms

1s

10s

DC

C

10.1 10010

Drain - Source Voltage V

10ms

DS

1ms

100us

(V)

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KMB7D1DP30QA

Revision No : 0

Fig9. Gate Charge Circuit and Wave Form

Schottky Diode

0.5 V

DSS

I

D

1.0 mA

V

GS

Fig10. Resistive Load Switching

0.5 V

DSS

6Ω

I

RL

V

GS

-4.5V

D

V

DS

Q

gs

t

d(on)

V

GS

10%

V

DS

on

t

Q

gd

r

t

d(off)

Q

g

t

off

t

f

Q

-10 V V

GS

90%

V

DS