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kmb7d0np30qa
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Datasheet kmb7d0np30qa Datasheet

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SEMICONDUCTOR
TECHNICAL DATA
KMB7D0NP30QA
N and P-Ch Trench MOSFET
Revision No : 2
General Description
It s mainly suitable for Back-light Inverter.
FEATURES
N-Channel
: V
DSS
=30V, ID=7A.
: R
DS(ON)
=23.5m (Max.) @ VGS=10V
: R
DS(ON)
=39m (Max.) @ VGS=4.5V
P-Channel
: V
DSS
=-30V, ID=-5A.
: R
DS(ON)
=45.5m (Max.) @ VGS=-10V
: R
DS(ON)
=80m (Max.) @ VGS=-4.5V
Super High Dense Cell Design.
Reliable and rugged.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL N-Ch P-Ch UNIT
Drain-Source Voltage
V
DSS
30 -30 V
Gate-Source Voltage
V
GSS
20 20
V
Drain Current
DC
ID*
7 -5
A
Pulsed
(note1)
I
DP
29 -20
Source-Drain Diode Current
I
S
1.7 -1.7
A
Drain Power Dissipation
PD*
2 W
Maximum Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Thermal Resistance, Junction to Ambient
R
thJA
*
62.5
/W
2007. 6. 28
B2
G
H
B1
1
4
5
8
A
P
D
L
T
FLP-8
0.20+0.1/-0.05T
P
1.27
MILLIMETERSDIM
A
4.85 0.2
+
_
B1
3.94 0.2
+
_
B2
6.02 0.3
+
_
D
0.4 0.1
+
_
G
0.15+0.1/-0.05
H
1.63 0.2
+
_
L
0.65 0.2
+
_
PIN CONNECTION (TOP VIEW)
Note : *Sorface Mounted on FR4 Board
S
1
G
1
S
2
G
2
1
2
3
4
8
7
6
5
D
D
D
D
D1 D1
S2
1
1
2
G1
G2
2
S1
N-Channel MOSFET
D2 D2
P-Channel MOSFET
Page 2
2007. 6. 28 2/9
KMB7D0NP30QA
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
ID=250 A, VGS=0V,
N-Ch 30 - -
V
ID=-250 A, VGS=0V,
P-Ch -30 - -
Drain Cut-off Current
I
DSS
VGS=0V, VDS=24V
N-Ch - - 1
A
VGS=0V, VDS=-24V
P-Ch - - -1
Gate Leakage Current
I
GSS
VGS= 22V, VDS=0V
N-Ch - -
100
nA
P-Ch - -
100
Gate Threshold Voltage
V
th
VDS=V
GS, ID
=250 A
N-Ch 1.0 - 3
V
VDS=V
GS, ID
=-250 A
P-Ch -1.0 - -3
Drain-Source ON Resistance
R
DS(ON)
*
VGS=10V, ID=7A
N-Ch - 18 23.5
m
VGS=-10V, ID=-5A
P-Ch - 35 45.5
VGS=4.5V, ID=6A
N-Ch - 30 39
VGS=-4.5V, ID=-4A
P-Ch - 62 80
ON State Drain Current
I
D(ON)
*
VGS=4.5V, VDS=5V
N-Ch 20 - -
A
VGS=-10V, VDS=-5V
P-Ch -20 - -
Forward Transconductance
g
fs
*
VDS=5V, ID=6.6A
N-Ch - 10 -
S
VDS=-5V, ID=-5A
P-Ch - 9 -
Source-Drain Diode Forward
Voltage
V
SD
*
IS=1.7A, VGS=0V
N-Ch - 0.7 1.2
V
IS=-1.7A, VGS=0V
P-Ch - -0.8 -1.2
Page 3
2007. 6. 28 3/9
KMB7D0NP30QA
Revision No : 2
Note 1>* Pulse test : Pulse width 300 , Duty Cycle 2%.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Dynamic
Total Gate Charge
Q
g
N-Ch
: V
DS
=15V, ID=6.6A,
V
GS
=10V (Fig.1)
P-Ch
: V
DS
=-15V, ID=-5A,
V
GS
=-10V (Fig.3)
N-Ch - 16.4 20.5
nC
P-Ch - 13 16
N-Ch
: V
DS
=15V, ID=6.6A,
V
GS
=4.5V (Fig.1)
P-Ch
: V
DS
=-15V, ID=-5A,
V
GS
=-4.5V (Fig.3)
N-Ch - 7.2 9
P-Ch - 6.25 7.8
Gate-Source Charge
Q
gs
N-Ch
: V
DS
=15V, ID=6.6A,
V
GS
=10V (Fig.1)
P-Ch
: V
DS
=-15V, ID=-5A,
V
GS
=-10V (Fig.3)
N-Ch - 4 -
P-Ch - 2.6 -
Gate-Drain Charge
Q
gd
N-Ch - 2.6 -
P-Ch - 2.9 -
Turn-on Delay time
t
d(on)
N-Ch
: V
DD
=15V, ID=6.6A,
V
GS
=10V, RG=3 (Fig.2)
P-Ch
: V
DD
=-15V, VGS=-10V,
R
G
=3 , RL=2.7 (Fig.4)
N-Ch - 7.4 -
ns
P-Ch - 4.7 -
Turn-on Rise time
t
r
N-Ch - 27.7 -
P-Ch - 7.8 -
Turn-off Delay time
t
d(off)
N-Ch - 12.2 -
P-Ch - 47.2 -
Turn-off Fall time
t
f
N-Ch - 7.6 -
P-Ch - 22.6 -
Input Capacitance
C
iss
N-Ch
: V
DS
=15V, VGS=0V, f=1.0MHz
P-Ch
: V
DS
=-15V, VGS=0V, f=1.0MHz
N-Ch - 742 -
pF
P-Ch - 820 -
Output Capacitance
C
oss
N-Ch - 126 -
P-Ch - 137 -
Reverse transfer Capacitance
C
rss
N-Ch - 76 -
P-Ch - 89 -
Page 4
2007. 6. 28 4/9
KMB7D0NP30QA
Revision No : 2
N-Channel
20
16
(A)
D
12
8
4
Drain Current I
0
0
(V)
1.6
VDS = V
th
I
= 250µA
DS
1.4
1.2
Fig1. ID - V
VGS = 10, 9, 8, 7, 6, 5V
165324
Drain - Source Voltage V
Fig3. Vth - T
GS
DS
VGS= 4V
VGS= 3V
(V)
DS
j
Fig2. ID - V
25
20
(A)
D
15
10
= -55
T
C
j
Drain Current I
5
0
0 1.6 4.83.20.8 2.4 4.0
Tj = 25
C
Gate - Source Voltage VGS (V)
Fig4. IDR - V
20.0
(A)
10.0
DR
GS
SD
T
= 125
j
C
1.0
0.8
0.6
0.4
Normalized Threshold Voltage V
-75 -50 -25
05025 100 15075 125
Junction Temperature Tj ( )
Fig5. R
DS(ON)
2.2
1.8
1.4
1.0
0.6
0.4
Normalized On Resistance
0
25-25 50-75 -50 100 15012575
0
- T
C
j
VGS = 10V
= 6.6A
I
D
1
Reverse Drain Current I
0.4
0.6
0.8
1.0
Source - Drain Voltage V
Fig6. C - V
1800
1600
1400
1200
1000
C
iss
800
600
Capacitance (pF)
400
C
oss
200
0
C
rss
0201052515 30
DS
SD
(V)
1.41.2
Junction Temperture Tj ( )
C
Drain - Source Voltage VDS (V)
Page 5
2007. 6. 28 5/9
KMB7D0NP30QA
Revision No : 2
12
V
=15V
DS
GS
10
ID = 6.6A
(V)
8
6
4
2
Gate - Source Voltage V
0
614212108161840
Gate - Charge
0
10
Fig7. Qg - V
Qg (nC)
GS
2
10
Operation in this area is limited by R
1
10
(A)
D
0
10
-1
10
Drain Current I
VGS= 10V SINGLE PULSE
-2
10
-1
10
Fig9. Transient Thermal Response Curve
Fig8. Safe Operation Area
DS(ON)
1ms
10ms
100ms
1s 10s DC
0
10
Drain - Source Voltage V
10
1
DS
10
2
(V)
10
3
Duty Cycle = 0.5
0.2
-1
10
0.1
0.05
0.02
-2
10
-4
10
Single Pluse
-3
10
-2
10
Normalized Transient Thermal Resistance
-1 10
10
0
Square Wave Pulse Duration (sec)
P
DM
t
1
1. Duty Cycle, D =
2. Per Unit Base = R
1
10
10
t
2
t
1
t
2
= 62.5 C/W
θJA
2
10
3
Page 6
2007. 6. 28 6/9
KMB7D0NP30QA
Revision No : 2
P-Channel
-20
-16
(A)
D
-12
-8
Drain Current I
-4
0
0
1.6
th
1.4
1.2
1.0
Fig1. ID - V
VGS = -10,-9,-8,-7,-6,-5V
-2 -5 -6-4-3 1
DS
Drain - Source Voltage V
Fig3. Vth - T
DS
Fig2. ID - V
-25
V
= -4V
GS
V
= -3V
GS
(V)
j
VDS = V
GS
I
= -250µA
D
-20
(A)
D
-15
-10
Drain Current I
-5
0
0-4.0-4.8-2.4-0.8 -1.6 -3.2
Gate - Source Voltage VGS (V)
-20
(A)
DR
-10
Tj= -55
Fig4. IDR - V
Tj=25
GS
C
C
SD
Tj=125
C
0.8
0.6
Normalized Threshold Voltage V
0.4
-75 -50 -25
05010025 15012575
Junction Temperature Tj ( )
Fig5. R
2.2
1.8
1.4
1.0
0.8
0.4
Normalized On Resistance
0.0
-75 -50
DS(ON)
050100-25 25 75 125 150
- T
C
j
VGS = -10V ID = -5A
Reverse Drain Current I
-1.0
Source - Drain Voltage V
1200
1000
C
800
600
400
Capacitance (pF)
200
iss
C
oss
C
rss
0
-0.8 -1.4-1.2-0.6 -1.0 -0.4
Fig6. C - V
DS
SD
(V)
-25-10 -150 -5 -20 -30
Junction Temperture Tj ( )
C
Drain - Source Voltage VDS (V)
Page 7
2007. 6. 28 7/9
KMB7D0NP30QA
Revision No : 2
-12 VD = -15V
ID = -5A
-10
(V)
GS
-8
-6
-4
-2
Gate - Source Voltage V
0
Gate - Charge
0
10
Fig7. Qg - V
Qg (nC)
GS
2
10
1
10
(A)
D
0
10
Operation in this area is limited by R
-1
10
Drain Current I
VGS= 10V SINGLE PULSE
-2
10
-1
14861201024
10
Fig9. Transient Thermal Response Curve
Fig8. Safe Operation Area
1ms
10ms
100ms
DS(ON)
0
10
Drain - Source Voltage V
1s
10s
DC
1
10
DS
10
2
(V)
10
3
Duty Cycle = 0.5
0.2
-1
10
0.1
0.05
0.02
-2
10
-4
10
Single Pluse
-3
10
-2
10
Normalized Transient Thermal Resistance
-1 10
10
0
Square Wave Pulse Duration (sec)
P
DM
t
1
1. Duty Cycle, D =
2. Per Unit Base = R
1
10
10
t
2
t
1
t
2
= 62.5 C/W
θJA
2
3
10
Page 8
2007. 6. 28 8/9
KMB7D0NP30QA
Revision No : 2
N-Channel
Fig. 1 Gate Charge
I
D
0.5 V DSS
1.0 mA
Fig. 2 Resistive Load Switching
V
GS
Schottky Diode
V
GS
10
V
I
D
V
DS
R
L
t
d(on)
Q
gs
Q
gd
t
on
t
r
Q
t
d(off)
g
t
off
t
f
Q
0.5 V
DSS
10
V
3 Ω
V
GS
90%
V
DS
V
GS
V
10%
DS
Page 9
2007. 6. 28 9/9
KMB7D0NP30QA
Revision No : 2
P-Channel
Fig. 1 Gate Charge
I
D
0.5 V DSS
1.0 mA
Fig. 2 Resistive Load Switching
Schottky Diode
V
GS
V
GS
-
10 V
I
D
V
DS
R
L
t
d(on)
Q
gs
Q
gd
t
on
t
r
Q
t
d(off)
g
t
off
t
f
Q
0.5 V
DSS
-10
3 Ω
V
V
GS
10%
V
DS
V
GS
DS
90%
V
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