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SEMICONDUCTOR
TECHNICAL DATA
KMB7D0N40QA
N-Ch Trench MOSFET
Revision No : 0
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for power management in pc, portable
equipment and battery powered systems.
FEATURES
V
DSS
=40V, ID=7A.
Drain-Source ON Resistance.
R
DS(ON)
=25m (Max.) @VGS=10V
R
DS(ON)
=45m (Max.) @VGS=4.5V
Super High Dense Cell Design
High Power and Current Handing Capability
Maximum Ratings (Ta=25 Unless otherwise noted)
2008. 1. 25
CHARACTERISTIC SYMBOL PATING UNIT
Drain Source Voltage
V
DSS
40 V
Gate Source Voltage
V
GSS
25
V
Drain Current
DC
ID *
7 A
Pulsed
I
DP
22 A
Drain Source Diode Forward Current
I
S
1.7 A
Drain Power Dissipation
TA=25
PD *
2 W
TA=100
1.44 W
Maximum Junction Temperature
T
j
-55~150
Storage Temperature Range
T
stg
-55~150
Thermal Resistance, Junction to Ambient
R
thJA
*
62.5
/W
Note) *Surface Mounted on 1 1 FR4 Board.
PIN CONNECTION (TOP VIEW)
H
P
D
A
8
1
G
5
B2
B1
4
FLP-8
T
A
B1
B2
D
G
H
L
P
L
MILLIMETERSDIM
4.85 0.2
3.94 0.2
6.02 0.3
0.4 0.1
0.15+0.1/-0.05
1.63 0.2
0.65 0.2
0.20+0.1/-0.05T
1.27
_
+
_
+
_
+
_
+
_
+
_
+
S
1
S
2
S
3
G
4
8
D
7
D
6
D
D
5
1
2
3
4
KMB7D0N
40QA
8
7
6
5
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2008. 1. 25 2/4
KMB7D0N40QA
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
ID=250 A, VGS=0V
40 - - V
Drain Cut-off Current
I
DSS
VDS=32V, VGS=0V
- - 1
A
Gate Leakage Current
I
GSS
VGS= 25V, VDS=0V
- -
100 A
Gate Threshold Voltage
V
th
VDS=V
GS, ID
=250 A
1 1.8 2.5 V
Drain-Source ON Resistance
R
DS(ON)
*
VGS=10.0V, ID=6A
- 20 25
m
VGS=4.5V, ID=5A
- 35 45
On-State Drain Current
I
D(ON)
* VDS=5V, VGS=10V
15 - - A
Forward Transconductance
gfs* VDS=5V, ID=6A
- 8 - S
Dynamic
Input Capaclitance
C
iss
VDS=25V, f=1MHz, VGS=OV
- 947 1231
pFOuput Capacitance
C
oss
- 117 152
Reverse Transfer Capacitance
C
rss
- 77 100
Total Gate Charge
Qg*
VDS=20V, VGS=10V, ID=6A
- 18.2 24
nC
VDS=20V, VGS=4.5V, ID=6A
- 8.7 12
Gate-Source Charge
Qgs*
VDS=20V, VGS=4.5V, ID=6A
- 2.8 4
Gate-Drain Charge
Qgd*
- 3.3 5
Turn-On Delat Time
t
d(on)
*
VDD=20V, VGS=10V
I
D
=1A, RG=3.3
- 16.7 19
ns
Turn-On Rise Time
tr*
- 3.6 5
Turn-On Deley Time
t
d(off)
*
- 28.7 38
Turn-On Fall Time
tf*
- 10.1 14
Source-Drain Diode Ratings
Source-Drain Forward Voltage
V
SDF
* IDR=1.7A, VGS=0V
- 0.78 1.2 V
Note) *Pulse Test : Pulse width 10 , Duty cycle 1%
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2008. 1. 25 3/4
KMB7D0N40QA
Revision No : 0
20
VGS=10,5,4.5V
16
(A)
D
12
8
Drain Current I
4
0
0
24
Common Source
V
=10V
DS
Pulse Test
20
(A)
D
16
12
8
Drain Current I
4
0
1
Fig1. I
2
- V
D
DS
Common Source
C
=25
T
A
4.0V
Pulse Test
3.5V
VGS=3.0V
46810
Drain - Source Voltage VDS (V)
Fig3. I
2345
125
- V
D
GS
25
C
Tc=-55
C
C
0.2
(Ω)
DS(ON)
0.16
Common Source
C
TA=25
Pulse Test
0.12
0.08
0.04
Source On Resistance R
0
Drain
0
Drain - Current ID (A)
200
Common Source
=10V
V
DS
Pulse Test
160
(mΩ)
Source On
120
DS(ON)
80
40
Resistance R
Normalized Drain
0
Fig2. R
84
Fig4. R
016012080-40 40-80
- I
DS(on)
D
12 16 20
- T
DS(on)
j
ID=6A
4.5V
VGS=10.0V
Gate-Source Volatage VGS (V)
Fig5. V
5
Common Source
V
(V)
th
Gate Threshold Voltage V
GS=VDS
ID=250µA
4
Pulse Test
3
2
1
0
-80 -40 40 80 1601200
Junction Temperature Tj ( )
th
- T
Junction Temperature Tj ( )
j
Fig6. I
10
DR
- V
(A)
8
DR
C
SDF
Common Source
= 25
T
A
Pulse Test
C
6
4
2
Reverse Drain Current I
0
C
Source - Drain Forward Voltage V
0.8 1.20 0.4 1.6 2.0
(V)
SDF
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2008. 1. 25 4/4
KMB7D0N40QA
Revision No : 0
Fig.7 Gate Charge Circuit and Wave Form
Schottky
1.0 mA
Diode
V
GS
I
D
0.5 V
DSS
I
D
V
GS
10 V
V
DS
Q
gs
Q
gd
Q
g
Q
Fig.8 Resistive Load Switching
0.5 V
DSS
3.3Ω
10 V
V
GS
V
R
L
V
DS
DS
V
GS
10%
t
d(on)
90%
t
t
r
t
on
d(off)
t
f
t
off
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