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SEMICONDUCTOR
TECHNICAL DATA
KMB7D0DN40QA
Dual N-Ch Trench MOSFET
Revision No : 2
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for power management in PC, portable
equipment and battery powered systems.
FEATURES
V
DSS
=40V, ID=7A.
Drain to Source on Resistance.
R
DS(ON)
=25m (Max.) @VGS=10V
R
DS(ON)
=45m (Max.) @VGS=4.5V
Maximum Ratings (Ta=25 Unless otherwise noted)
2009. 9. 24
CHARACTERISTIC SYMBOL PATING UNIT
Drain to Source Voltage
V
DSS
40 V
Gate to Source Voltage
V
GSS
20
V
Drain Current
Ta=25
I
D
7 A
Pulsed
I
DP
36 A
Drain to Source Diode Forward Current
I
S
1.7 A
Drain Power Dissipation
Ta=25
P
D
2 W
Ta=100
1.44 W
Maximum Junction Temperature
T
j
-55~150
Storage Temperature Range
T
stg
-55~150
Thermal Resistance, Junction to Ambient
R
thJA
62.5
/W
Note1) Surface Mounted on 1” 1” FR4 Board., t≤10sec
H
P
D
A
8
1
5
4
T
G
B2
B1
L
A
B1
B2
D
G
H
L
P
FLP-8
MILLIMETERSDIM
_
4.85 0.2
+
_
3.94 0.2
+
_
6.02 0.3
+
_
+
0.4 0.1
0.15+0.1/-0.05
_
1.63 0.2
+
_
0.65 0.2
+
1.27
0.20+0.1/-0.05T
PIN CONNECTION (TOP VIEW)
S
1
1
G
2
1
S
3
2
G
4
2
8
D
1
7
D
1
6
D
2
D
5
2
1
2
3
4
KMB7D0DN
40QA
8
7
6
5
Page 2
KMB7D0DN40QA
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain to Source Breakdown Voltage
BV
DSS
ID=250 A, VGS=0V
40 - - V
Drain Cut-off Current
I
DSS
VDS=32V, VGS=0V
- - 1
A
Gate to Source Leakage Current
I
GSS
VGS= 20V, VDS=0V
- -
100 A
Gate to Source Threshold Voltage
V
th
VDS=V
GS, ID
=250 A
1 1.8 2.5 V
Drain to Source on Resistance
R
DS(ON)
VGS=10V, ID=6A
- 20 25
m
VGS=4.5V, ID=5A
- 35 45
On-State Drain Current
I
D(ON)
VDS=5V, VGS=10V
15 - - A
Forward Transconductance
g
fs
VDS=5V,
- 8 - S
Dynamic
Input Capaclitance
C
iss
VDS=20V, f=1MHz, VGS=0V
- 954 -
pFOuput Capacitance
C
oss
- 201 -
Reverse Transfer Capacitance
C
rss
- 82 -
Total Gate Charge
Q
g
VDS=20V, VGS=4.5V, ID=6A
- 11.6 -
nCGate to Source Charge
Q
gs
- 2.8 -
Gate to Drain Charge
Q
gd
- 2.2 -
Turn-On Delay Time
t
d(on)
VDD=20V, VGS=10V
I
D
=1A, RG=3.3
- 16.7 -
ns
Turn-On Rise Time
t
r
- 3.6 -
Turn-Off Delay Time
t
d(off)
- 28.7 -
Turn-Off Fall Time
t
f
- 10.1 -
Source to Drain Diode Ratings
Source to Drain Forward Voltage
V
SD
IS=1.7A, VGS=0V
- 0.78 1.2 V
Note2) Pulse Test : Pulse width 10 , Duty cycle 1%
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2009. 9. 24 3/5
KMB7D0DN40QA
Revision No : 2
20
16
(A)
D
12
8
Drain Current I
4
0
0
20
16
(A)
D
12
8
Drain Current I
4
0
1
Fig1. I
VGS=10V
2
- V
D
DS
4.0V
3.5V
VGS=3.0V
46810
Drain to Source Voltage VDS (V)
Fig3. I
2345
150
- V
D
GS
25
C
Tj=-55
C
C
(mΩ)
50
DS(ON)
40
30
20
10
Source On Resistance R
0
0
Drain to
Drain Current ID (A)
2.0
1.8
1.6
1.4
Source On
DS(ON)
1.2
1.0
0.8
Resistance R
0.6
0.4
Normalized Drain
0.2
Fig2. R
VGS=4.5V
VGS=10V
84
Fig4. R
VGS=10V,
- I
DS(on)
DS(on)
ID=6A
VGS=4.5V,
5025 1751501250-50 10075-75
D
12 16 20
- T
ID=5A
j
Gate to Source Volatage VGS (V)
th
1.6
VDS=V
1.4
1.2
1.0
0.8
0.6
0.4
0.2
GS, ID
-75 -25 0-50 75 100 125 17515025 50
Normalized Gate to Source Threshold Voltage V
Fig5. V
=250µA
Junction Temperature Tj ( )
th
- T
j
C
Junction Temperature Tj ( )
2
10
(A)
S
1
10
Tj=150
C
0
10
-1
10
Reverse Drain Current I
-2
10
0.2
0.4 1.20.6 0.8 1.0
Source to Drain Voltage V
Fig6. IS - V
Tj=25
C
SD
Tj=-55
C
SD
C
(V)
Page 4
KMB7D0DN40QA
Revision No : 2
)
1500
1200
900
600
Capacitance (pF)
300
0
Fig 7. C - V
DS
2010 30 400
Drain to Source Voltage V
2
10
1
10
(A)
D
0
10
f=1MHz
Ciss
Coss
Crss
(V)
DS
Fig9. Safe Operation Area
LIMIT
DS(ON)
R
Fig 8. V
10
V
= 20V, ID = 6A
(V)
GS
Gate to Source Voltage V
DS
8
6
4
2
0
0
Gate Charge
100µs
1ms
10ms
100ms
- Q
GS
g
6
9153
12
Qg (nC)
10
Drain to Current I
10
1
10
1
0.5
0.2
0.1
-1
0.05
10
0.02
0.01
-2
10
NORMALIZED EFFECTIVE
SINGLE
TRANSIENT THER MAL RESISTANCE
-3
10
-4
10
-3
10
-1
VGS= 10V
SINGLE PULSE
C
= 25
T
j
-2
-2
10
-1
10
Drain to Source Voltage V
0
10
DS
1
10
(V)
Fig10. Transient Thermal Response Curve
-2
10
-1
10
1
DC
2
10
P
DM
t
1
t
2
R
= 71.9 C/W
θJA
1
10
2
10
3
10
Square wave pulse Duration tw (sec
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2009. 9. 24 5/5
KMB7D0DN40QA
Revision No : 2
Fig.7 Gate Charge Circuit and Wave Form
Schottky
1.0 mA
Diode
V
GS
I
D
0.5 V
DSS
I
D
V
GS
10 V
V
DS
Q
gs
Q
gd
Q
g
Q
Fig.8 Resistive Load Switching
0.5 V
DSS
6Ω
10 V
V
GS
V
R
L
V
DS
DS
V
GS
10%
t
d(on)
90%
t
t
r
t
on
d(off)
t
f
t
off
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