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SEMICONDUCTOR
TECHNICAL DATA
KMB7D0DN40Q
Dual N-Ch Trench MOSFET
Revision No : 1
General Description
Switching regulator and DC-DC Converter applications.
It s mainly suitable for power management in PC,
portable equipment and battery powered systems.
FEATURES
V
DSS
=40V, ID=7A.
Low Drain-Source ON Resistance.
: R
DS(ON)
=25m (Max.) @ VGS=10V
: R
DS(ON)
=45m (Max.) @ VGS=4.5V
Super High Dense Cell Design.
High Power and Current Handling Capability
MAXIMUM RATING (Ta=25 )
* : Surface Mounted on FR4 Board, t 10sec.
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
V
DSS
40 V
Gate-Source Voltage
V
GSS
25
V
Drain Current
DC
ID *
7
A
Pulsed
(Note1)
I
DP
*
22
Source-Drain Diode Current
IS*
1.7
A
Drain Power Dissipation
PD *
2 W
Maximum Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Thermal Resistance, Junction to Ambient
R
thJA
62.5
/W
H
T
G
P
D
A
8
1
5
B1
B2
4
FLP-8 (1)
L
MILLIMETERS
DIM
5.05+0.25/-0.20
A
B1
B2
D
G
H
L
P
T
_
3.90 0.3+
_
6.00 0.4+
_
0.42 0.1
+
_
0.15 0.1
+
_
1.4 0.2
+
_
0.5 0.2
+
1.27 Typ.
_
0.20 0.05+
PIN CONNECTION (TOP VIEW)
S
1
1
8
D
1
D2 D2D1 D1
G
S
G
2
1
3
2
4
2
7
D
1
6
D
2
D
5
2
G1
S1
G2
S2
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KMB7D0DN40Q
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note 1) Pulse test : Pulse width 300 , Duty Cycle 2%.
Note 2) Guaranteed by design. Not subject to production testing.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
ID=250 A, VGS=0V
40 - - V
Drain Cut-off Current
I
DSS
VDS=32V, VGS=0V
- - 1
A
Gate Leakage Current
I
GSS
VGS= 25V, VDS=0V
- -
100
nA
Gate Threshold Voltage
V
th
VDS=V
GS, ID
=250 A (Note 1)
1.0 1.8 2.5 V
Drain-Source ON Resistance
R
DS(ON)
VGS=10V, ID=6A (Note 1)
- 20 25
m
VGS=4.5V, ID=5A (Note 1)
- 35 45
ON State Drain Current
I
D(ON)
VGS=10V, VDS=5V (Note 1)
15 - - A
Forward Transconductance
g
fs
ID=6A, VDS=5V (Note 1)
- 8 - S
Source-Drain Diode Forward Voltage
V
SD
IS=1.7A, VGS=0V (Note 1)
- 0.78 1.2 V
Dynamic (Note 2)
Total Gate Charge
Q
g
VDS=20V, ID=6A,
V
GS
=10V (Fig.1)
- 18.2 24
nC
VDS=20V, ID=6A,
V
GS
=4.5V (Fig.1)
- 8.7 12
Gate-Source Charge
Q
gs
VDS=20V, ID=6A,
V
GS
=4.5V (Fig.1)
- 2.8 4
Gate-Drain Charge
Q
gd
- 3.3 5
Turn-on Delay time
t
d(on)
VDD=20V, ID=1A, VGS=10V
R
G
=3.3 (Fig.2)
- 16.7 19
ns
Turn-on Rise time
t
r
- 3.6 5
Turn-off Delay time
t
d(off)
- 28.7 38
Turn-off Fall time
t
f
- 10.1 14
Input Capacitance
C
iss
VDS=25V, VGS=0V, f=1.0MHz
- 947 1231
pF
Output Capacitance
C
oss
- 117 152
Reverse transfer Capacitance
C
rss
- 77 100
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KMB7D0DN40Q
Revision No : 1
20
16
(A)
D
12
8
Drain Current I
4
0
0
1.3
th
1.2
1.1
ID - V
DS
VGS=10, 9, 8, 7, 6, 5V
2
4681012
Drain - Source Voltage VDS (V)
Vth - T
j
VDS = V
ID = 250µA
VGS= 4V
VGS= 3V
ID - V
GS
25
20
(A)
D
15
10
Drain Current I
5
0
Tj = 125
C
Tj = 25
C
Tj = -55
C
1.2 1.803.60.6 3.02.4
Gate - Source Voltage VGS (V)
IS - V
SD
20
GS
(A)
S
10
1.0
0.9
0.8
0.7
Normalized Threshold Voltage V
0.6
-75 -50 -25
05010025
Junction Temperature Tj ( )
R
DS(ON)
2.2
VGS = 10V
= 6A
I
D
1.8
1.4
1.0
0.6
0.2
Normalized On Resistance
0
-75 -50 -25 25 50 75 1251000
- T
Reverse Drain Current I
1
12575
Source - Drain Voltage V
0.8 1.41.20.6 1.00.4
(V)
SD
C
C - V
j
1500
1200
C
iss
900
600
Capacitance (pF)
300
C
oss
C
rss
0
10
DS
150 5 20 30
25
Junction Temperature Tj ( )
C
Drain - Source Voltage V
DS
(V)
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KMB7D0DN40Q
Revision No : 1
)
10
V
= 20V
(V)
GS
Gate - Source Voltage V
DS
= 6A
I
D
8
6
4
2
0
2
0
4
Qg- V
6
GS
8
10
14
12
16
Gate - Charge
1
10
1
0.5
0.2
0.1
0.05
-1
10
0.02
0.01
Normalized Transient Thermal Resistance
-2
10
-5
10
Single Pluse
-4
10
-3
10
10
Square Wave Pulse Duration (sec
Qg (nC)
R
th
P
DM
1. R
2. R
3. T
4. Duty Cycle, D=t1/t2
-2
-1
10
1
t
1
t
2
= r(t) *R
thJA(t)
= See data sheet
thJA
JM-TA=PDM*RthJA(t)
1
10
2
10
thJA
3
10
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KMB7D0DN40Q
Revision No : 1
Fig. 1 Gate Charge
I
D
0.5 V
DSS
1.0 mA
Schottky
Diode
V
GS
V
GS
10
V
I
D
V
DS
Q
gs
Q
gd
Q
g
Q
Fig. 2 Resistive Load Switching
0.5 V
DSS
3.3 Ω
10
V
V
GS
t
t
d(on)
R
L
V
DS
V
GS
90%
V
10%
DS
on
t
r
t
d(off)
t
off
t
f
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