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SEMICONDUCTOR
TECHNICAL DATA
KMB6D0NP40QA
N and P-Ch Trench MOSFET
Revision No : 0
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for Back-light Inverter.
FEATURES
N-Channel
: V
DSS
=40V, ID=6A.
: R
DS(ON)
=31m (Max.) @ VGS=10V
: R
DS(ON)
=45m (Max.) @ VGS=4.5V
P-Channel
: V
DSS
=-40V, ID=-5A.
: R
DS(ON)
=45m (Max.) @ VGS=-10V
: R
DS(ON)
=63m (Max.) @ VGS=-4.5V
Super High Dense Cell Design.
MAXIMUM RATING (Ta=25 )
* : Surface Mounted on FR4 Board.
FLP-8
0.20+0.1/-0.05
P
T
1.27
MILLIMETERS
0.4 0.1
0.15+0.1/-0.05
4.85 0.2
B2
G
H
L
D
A
B1
DIM
6.02 0.3
1.63 0.2
0.65 0.2
3.94 0.2
+
_
+
_
+
_
+
_
+
_
+
_
G
H
B1 B2
1
4
5
8
A
P
D
L
T
CHARACTERISTIC SYMBOL N-Ch P-Ch UNIT
Drain-Source Voltage
V
DSS
40 -40 V
Gate-Source Voltage
V
GSS
20 20
V
Drain Current
DC
ID*
6 -5
A
Pulsed
IDP*
20 -20
Source-Drain Diode Current
IS*
3.0 -3.2
A
Drain Power Dissipation
TA=25
PD*
2 2
W
TA=70
1.3 1.3
Maximum Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Thermal Resistance, Junction to Ambient
R
thJA
*
62.5
/W
PIN CONNECTION (TOP VIEW)
8
7
6
5
D
1
D
1
D
2
D
2
S
1
1
G
2
1
S
3
2
G
4
2
Marking
Type Name
1
2
3
4
KMB6D0NP
40QA
8
7
6
5
Lot No.
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KMB6D0NP40QA
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
ID=250 A, VGS=0V
N-Ch 40 - -
V
ID=-250 A, VGS=0V
P-Ch -40 - -
Drain Cut-off Current
I
DSS
VDS=32V, VGS=0V
N-Ch - - 1
A
VDS=-32V, VGS=0V
P-Ch - - -1
Gate Leakage Current
I
GSS
VGS= 20V, VDS=0V
N-Ch - -
100
nA
P-Ch - -
100
Gate Threshold Voltage
V
th
VDS=V
GS, ID
=250 A
N-Ch 1.0 2.3 3.0
V
VDS=V
GS, ID
=-250 A
P-Ch -1.0 -2.0 -3.0
Drain-Source ON Resistance
R
DS(ON)
*
VGS=10V, ID=6A
N-Ch - 19.6 31.0
m
VGS=-10V, ID=-5A
P-Ch - 31.2 45.0
VGS=4.5V, ID=5A
N-Ch - 39.9 45.0
VGS=-4.5V, ID=-2A
P-Ch - 47.6 63.0
Forward Transconductance
gfs*
VDS=5V, ID=6A
N-Ch - 2.2 -
S
VDS=-5V, ID=-4A
P-Ch - 9.5 -
Dynamic
Input Capacitance
C
iss
N-Ch
: V
DS
=20V, VGS=0V, f=1MHz
P-Ch
: V
DS
=-20V, VGS=0V, f=1MHz
N-Ch - 420 -
pF
P-Ch - 850 -
Output Capacitance
C
oss
N-Ch - 160 -
P-Ch - 220 -
Reverse transfer Capacitance
C
rss
N-Ch - 40 -
P-Ch - 82 -
Total Gate Charge
Qg*
N-Ch
: V
DS
=20V, ID=6A, VGS=10V
P-Ch
: V
DS
=-20V, ID=-5A, VGS=-10V
N-Ch - 12.0 -
nC
P-Ch - 15.0 -
Gate-Source Charge
Qgs*
N-Ch
: V
DS
=20V, ID=6A,
V
GS
=10V
P-Ch
: V
DS
=-20V, ID=-5A,
V
GS
=-4.5V
N-Ch - 1.6 -
P-Ch - 2.0 -
Gate-Drain Charge
Qgd*
N-Ch - 2.6 -
P-Ch - 6.5 -
Turn-on Delay time
t
d(on)
*
N-Ch
: V
DD
=20V, ID=6A,
V
GS
=10V, RG=3
P-Ch
: V
DD
=-20V, VGS=-10V,
R
G
=3 , ID=-5A
N-Ch - 9.0 -
ns
P-Ch - 17.0 -
Turn-on Rise time
tr*
N-Ch - 8.9 -
P-Ch - 13.2 -
Turn-off Delay time
t
d(off)
*
N-Ch - 23.6 -
P-Ch - 38.0 -
Turn-off Fall time
tf*
N-Ch - 3.4 -
P-Ch - 15.0 -
Source-Drain Diode Ratings
Source-Drain Diode Forward Voltage
V
SDF
*
IS=1.0A, VGS=0V
N-Ch - 0.71 1.2
V
IS=-1.0A, VGS=0V
P-Ch - -0.71 -1.2
Note>* Pulse Test : Pulse width <300 , Duty cycle < 2%
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Fig11. Gate Charge Circuit and Wave Form
Schottky
2.0 mA
Diode
V
GS
0.5 V
DSS
I
D
V
GS
10 V
I
D
V
DS
Q
gs
Q
Q
gd
Q
g
Fig12. Resistive Load Switching
0.5 V
DSS
3Ω
10 V
V
R
L
V
DS
V
GS
DS
V
GS
10%
t
d(on)
90%
t
t
r
t
on
d(off)
t
f
t
off
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KMB6D0NP40QA
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KMB6D0NP40QA
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KMB6D0NP40QA
Revision No : 0
Fig. 11 Gate Charge
I
D
0.5 V
DSS
2.0 mA
Schottky
Diode
I
D
V
DS
V
GS
-
4.5 V
V
GS
Q
Q
gs
Q
gd
Q
g
Fig. 12 Resistive Load Switching
0.5 V
DSS
3Ω
-
10 V
V
GS
t
R
L
V
DS
t
d(on)
V
GS
10%
DS
90%
V
on
t
r
t
d(off)
t
off
t
f
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