Datasheet kmb6d0dn35qa Datasheet

2007. 8. 13

1/5

SEMICONDUCTOR

TECHNICAL DATA

KMB6D0DN35QA

Dual N-Ch Trench MOSFET

Revision No : 1

GENERAL DESCRIPTION

This Trench MOSFET has better characteristics, such as fast switching

time, low on resistance, low gate charge and excellent avalanche

characteristics. It is mainly suitable for DC/DC Converters.

FEATURES

V

DSS

=35V, ID=6A.

Drain-Source ON Resistance.

R

DS(ON)

=28m (Max.) @VGS=10V

R

DS(ON)

=42m (Max.) @VGS=4.5V

Super High Dense Cell Design

Very fast switching

MAXIMUM RATING (Ta=25 Unless otherwise noted)

* : Surface Mounted on FR4 Board

CHARACTERISTIC SYMBOL PATING UNIT

Drain Source Voltage

V

DSS

35V V

Gate Source Voltage

V

GSS

20

V

Drain Current

DC

ID *

6 A

Pulsed

I

DP

20 A

Drain Source Diode Forward Current

I

S

1.3 A

Drain Power Dissipation

25

PD *

2 W

100

1.6 W

Maximum Junction Temperature

T

j

-50~150

Storage Temperature Range

T

stg

-50~150

Thermal Resistance, Junction to Ambient

R

thJA

*

62.5

/W

H

P

D

A

8

1

5

4

T

G

A

B1

B2

D

G

B2

B1

H

L

P

FLP-8

L

MILLIMETERSDIM

4.85 0.2

3.94 0.2

6.02 0.3

0.4 0.1

0.15+0.1/-0.05

1.63 0.2

0.65 0.2

0.20+0.1/-0.05T

1.27

_

+

_

+ _

+

_

+

_

+ _

+

PIN CONNECTION (TOP VIEW)

S

1

G

2

1

S

3

2

G

4

2

8

D

1

7

D

1

6

D

2

D

5

2

1

2

3

4

Marking

Type Name

KMB6D0DN 35QA

721

Lot No.

8

7

6

5

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KMB6D0DN35QA

Revision No : 1

ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage

BV

DSS

ID=250 A, VGS=0V

35 - - V

Drain Cut-off Current

I

DSS

VDS=24V, VGS=0V

- - 1

A

Gate Leakage Current

I

GSS

VGS= 25V, VDS=0V

- -

100

nA

Gate Threshold Voltage

Vth*

VDS=V

GS, ID

=250 A

1.0 2.0 3.0 V

Drain-Source ON Resistance

R

DS(ON)

*

VGS=10.0V, ID=6A

- 24 28 m

VGS=4.5V, ID=4.9A

- 35 42

On-State Drain Current

I

D(ON)

* VDS=5V, VGS=10V

20 - - A

Forward Transconductance

gfs* VDS=10V, ID=6A

- 20 - S

Dynamic

Input Capacitance

C

iss

VDS=15V, f=1MHz, VGS=0V

- 740 -

pFOuput Capacitance

C

oss

- 170 -

Reverse Transfer Capacitance

C

rss

- 75 -

Total Gate Charge

Qg*

VDS=10V, VGS=5V, ID=6A

- 7.0 10.0

nCGate-Source Charge

Qgs*

- 3.8 -

Gate-Drain Charge

Qgd*

- 2.5 -

Turn-On Delay Time

t

d(on)

*

VDD=15V, VGS=10V

I

D

=1A, RG=6 (Note 1)

- 8 16

ns

Turn-On Rise Time

tr*

- 13 24

Turn-Off Delay Time

t

d(off)

*

- 18 29

Turn-Off Fall Time

tf*

- 8 6

Source-Drain Diode Ratings

Source-Drain Forward Voltage

V

SDF

IDR=1.7A, VGS=0V

- 0.75 1.2 V

Note>*Pulse Test : Pulse width 300 , Duty cycle 2%

2007. 8. 13

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KMB6D0DN35QA

Revision No : 1

20

16

(A)

D

12

8

Drain Current I

4

0

20

Common Source

=5V

V

DS

Pulse Test

15

(A)

D

10

5

Drain Current I

0

12

VGS=10

VGS=5

2

Drain -

Fig1. I

- V

D

DS

VGS=4.5

Common Source

C

Tc= 25 Pulse Test

VGS=4.0

VGS=3.5

VGS=3.0

46810

Source Voltage VDS (V)

Fig3. I

- V

D

GS

125

C

345

25

-55

C

Fig2. R

0.16

(Ω)

Source On Resistance R

Drain

0.14

DS(ON)

0.12

0.1

0.08

0.06

0.04

0.02

Common Source

C

Tc= 25 Pulse Test

0

Drain Current I

Fig4. R

50

Common Source

=10V

V

DS

Pulse Test

40

30

(mΩ)

20

DS(ON)

Source On Resistance

R

10

Drain

0

- I

DS(on)

0 16012080-40 40-80

D

VGS=4.5

VGS=10.0

10 1505 20

(A)

D

- T

j

Gate - Source Voltage VGS (V)

Fig5. V

5

Common Source V

(V)

th

Gate Threshold Voltage V

GS=VDS

ID=250µA

4

Pulse Test

3

2

1

0

-80 -40 40 80 1601200

Junction Temperature Tj ( )

th

- T

Junction Temperature Tj ( )

j

10

Fig6. I

DR

- V

(A)

8

DR

6

4

2

SDF

C

Common Source

C

Tc= 25 Pulse Test

Reverse Drain Current I

0

C

Source - Drain Forward Voltage V

0.8

1.20 0.4 1.6 2.0

(V)

SDF

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KMB6D0DN35QA

Revision No : 1

0

10

0.5

0.2

0.1

-1

10

0.05

0.02

0.01

-2

10

Thermal Resistance

Normalized Effective Transient

10

-3

-4

10

Single Pluse

-3

10

Fig7. Transient Thermal Response Curve

-2

10

Square Wave Pulse Duration (sec)

-1

10

1

P

DM

t

1

t

2

Duty Cycle D = t1/t

1

10

2

10

2

3

10

2

10

Operation in this area is limited by R

1

10

(A)

D

0

10

-1

10

Drain Current I

-2

10

VGS= 10V SINGLE PULSE T

A

-1

Fig8. Safe Operation Area

DS(ON)

DC

= 25 C

0

10

Drain - Source Voltage V

10s

100ms

1s

10ms

10

DS

1

(V)

1ms

100µs

2

10

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KMB6D0DN35QA

Revision No : 1

Fig. 1 Gate Charge

I

D

0.5 V DSS

1.0 mA

Schottky Diode

V

GS

V

GS

10 V

I

D

V

DS

Q

gs

Q

gd

Q

g

Q

Fig. 2 Resistive Load Switching

0.5 V

DSS

6Ω

10 V

V

GS

V

R

L

V

DS

V

GS

10%

t

d(on)

90%

t

r

t

on

d(off)

t

f

t

off