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SEMICONDUCTOR
TECHNICAL DATA
KMB6D0DN30QA
Dual N-Ch Trench MOSFET
Revision No : 1
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment and DC-DC
Converter Applications.
FEATURES
V
DSS
=30V, ID=6A.
Drain-Source ON Resistance.
R
DS(ON)
=28m (Max.) @VGS=10V
R
DS(ON)
=42m (Max.) @VGS=4.5V
Super High Dense Cell Design
High Power and Current Handing Capability
MAXIMUM RATING (Ta=25 Unless otherwise noted)
Note> *Surface Mounted on FR4 Board, t 10sec.
CHARACTERISTIC SYMBOL PATING UNIT
Drain Source Voltage
V
DSS
30 V
Gate Source Voltage
V
GSS
20
V
Drain Current
DC
ID *
6 A
Pulsed
I
DP
30 A
Drain Source Diode Forward Current
I
S
1.7 A
Drain Power Dissipation
25
PD *
2 W
Maximum Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-50~150
Thermal Resistance, Junction to Ambient
R
thJA
*
62.5
/W
H
P
D
A
8
1
5
4
T
G
A
B1
B2
D
G
B2
B1
H
L
P
FLP-8
KMB6D0DN
30QA
L
MILLIMETERSDIM
4.85 0.2
3.94 0.2
6.02 0.3
0.4 0.1
0.15+0.1/-0.05
1.63 0.2
0.65 0.2
0.20+0.1/-0.05T
1.27
_
+
_
+
_
+
_
+
_
+
_
+
PIN CONNECTION (TOP VIEW)
S
G
S
G
1
1
2
1
3
2
4
2
8
7
6
5
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
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KMB6D0DN30QA
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
ID=250 A, VGS=0V
30 - - V
Drain Cut-off Current
I
DSS
VDS=24V, VGS=0V
- - 1
A
Gate Leakage Current
I
GSS
VGS= 20V, VDS=0V
- -
100
nA
Gate Threshold Voltage
V
th
VDS=V
GS, ID
=250 A
1.0 1.7 2.5 V
Drain-Source ON Resistance
R
DS(ON)
*
VGS=10V, ID=6A
- 24 28
m
VGS=4.5V, ID=5A
- 35 42
On-State Drain Current
I
D(ON)
* VDS=5V, VGS=10V
20 - - A
Forward Transconductance
gfs* VDS=5V, ID=6A
- 20 - S
Dynamic
Input Capacitance
C
iss
VDS=15V, f=1MHz, VGS=0V
- 576 -
pFOuput Capacitance
C
oss
- 111 -
Reverse Transfer Capacitance
C
rss
- 75 -
Total Gate Charge
Qg*
VDS=15V, VGS=10V, ID=2A
- 12.5 -
nCGate-Source Charge
Qgs*
- 2.0 -
Gate-Drain Charge
Qgd*
- 2.8 -
Turn-On Delay Time
t
d(on)
*
VDD=15V, VGS=10V
I
D
=1A, RG=6
- 7.8 -
ns
Turn-On Rise Time
tr*
- 11.6 -
Turn-Off Delay Time
t
d(off)
*
- 15.3 -
Turn-Off Fall Time
tf*
- 16 -
Source-Drain Diode Ratings
Source-Drain Forward Voltage
V
SDF
* IDR=1.7A, VGS=0V
- 0.75 1.2 V
Note> * Pulse Test : Pulse width 300 , Duty cycle 2%
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KMB6D0DN30QA
Revision No : 1
10
8
(A)
D
6
4
Drain Current I
2
0
0
25
20
(A)
D
15
10
Drain Current I
5
Fig1. ID - V
VGS=10, 9, 8, 7, 6, 5, 4V
1.0 1.5 2.0 2.5 3.0
0.5
DS
Drain - Source Voltage VDS (V)
Fig3. ID - V
125
C
25
-55
GS
C
C
VGS=2.5V
VGS=1.5V
Fig2. R
0.16
(Ω)
Source On Resistance R
Drain
0.14
DS(ON)
0.12
0.1
0.08
0.06
0.04
0.02
Common Source
Ta= 25
Pulse Test
0
C
Drain Current I
Fig4. R
1.6
VGS = 10V
= 6A
I
1.4
1.2
1.0
0.8
0.6
D
DS(ON)
R
- I
DS(on)
10 1505 20
DS(ON)
D
VGS=4.5
(A)
D
- T
VGS=10.0
j
0
2.0 3.00 6.01.0 5.04.0
Gate - Source Voltage VGS (V)
Fig5. Vth - T
1.6
th
1.4
1.2
1.0
0.8
0.6
Normalized Threshold Voltage V
0.4
-75 -50 -25
05010025 15012575
Junction Temperature Tj ( )
Normalized On Resistance
0
-75 -50 -25 25 50 75 1501251000
Junction Temperature Tj ( )
j
VDS = V
I
= 250µA
D
GS
40
(A)
DR
10
Fig6. IS - V
C
SDF
Reverse Drain Current I
1
C
Source - Drain Voltage V
0.8 1.41.20.6 1.00.4
(V)
SDF
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KMB6D0DN30QA
Revision No : 1
1200
1000
800
600
400
Capacitance (pF)
200
0
C
iss
C
oss
C
rss
Fig7. C - V
DS
Drain - Source Voltage VDS (V)
2
10
Operation in this
area is limited by R
1
10
(A)
D
0
10
2510 1505 20 30
Fig9. Safe Operation Area
DS(ON)
100ms
1s
DC
10s
10
V
= 15V
DS
= 2A
I
D
8
(V)
GS
6
4
2
Gate - Source Voltage V
0
Gate - Charge
100µs
1ms
10ms
Fig8. Qg - V
Qg (nC)
GS
12936015
10
Drain Current I
10
1
0.5
0.2
0.1
-1
10
0.05
0.02
0.01
-2
10
Thermal Resistance
Normalized Effective Transient
-3
10
-4
10
Single Pluse
-3
10
-1
VGS= 10V
SINGLE PULSE
R
= 62.5 C/W
θJA
-2
-1
10
0
10
Drain - Source Voltage V
1
10
(V)
DS
Fig10. Transient Thermal Response Curve
-2
10
-1
10
1
2
10
P
DM
t
1
t
2
R
= 62.5 C/W
θJA
1
10
2
10
3
10
Square Wave Pulse Duration (sec)
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KMB6D0DN30QA
Revision No : 1
Fig11. Gate Charge
I
D
0.5 V
DSS
1.0 mA
Schottky
Diode
V
GS
V
GS
10 V
I
D
V
DS
Q
gs
Q
gd
Q
g
Q
Fig12. Resistive Load Switching
0.5 V
DSS
6Ω
10 V
V
GS
V
R
L
V
DS
DS
V
GS
10%
t
d(on)
90%
t
t
r
t
on
d(off)
t
f
t
off
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