Datasheet kmb4d8dn55q Datasheet

2007. 3. 22

1/5

SEMICONDUCTOR

TECHNICAL DATA

KMB4D8DN55Q

Dual N-Ch Trench MOSFET

Revision No : 2

General Description

Switching regulator and DC-DC Converter applications.

It s mainly suitable for power management in PC,

portable equipment and battery powered systems.

FEATURES

V

DSS

=55V, ID=4.8A.

Low Drain-Source ON Resistance.

: R

DS(ON)

=50m (Max.) @ VGS=10V

: R

DS(ON)

=75m (Max.) @ VGS=4.5V

Super High Dense Cell Design.

High Power and Current Handling Capability

MAXIMUM RATING (Ta=25 )

* : Surface Mounted on FR4 Board, t 10sec.

CHARACTERISTIC SYMBOL RATING UNIT

Drain-Source Voltage

V

DSS

55 V

Gate-Source Voltage

V

GSS

20

V

Drain Current

DC

ID *

4.8 A

Pulsed

(Note1)

I

DP

*

25

Source-Drain Diode Current

IS*

1.7

A

Drain Power Dissipation

PD *

2 W

Maximum Junction Temperature

T

j

150

Storage Temperature Range

T

stg

-55 150

Thermal Resistance, Junction to Ambient

R

thJA

62.5

/W

H

T

G

P

D

A

8

1

5

B2B1

4

L

MILLIMETERS

DIM

5.05+0.25/-0.20

A

B1

B2

D

G

H

L

P

T

_

3.90 0.3+ _

6.00 0.4+ _

0.42 0.1

+ _

0.15 0.1

+ _

1.4 0.2

+ _

0.5 0.2

+

1.27 Typ. _

0.20 0.05+

FLP-8 (1)

PIN CONNECTION (TOP VIEW)

S

1

8

D

1

D2 D2D1 D1

G

S

G

2

1

3

2

4

2

7

D

1

6

D

2

D

5

2

G1

S1

G2

S2

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KMB4D8DN55Q

Revision No : 2

ELECTRICAL CHARACTERISTICS (Ta=25 )

Note 1) Pulse test : Pulse width 300 , Duty Cycle 2%.

Note 2) Guaranteed by design. Not subject to production testing.

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage

BV

DSS

ID=250 A, VGS=0V

55 - - V

Drain Cut-off Current

I

DSS

VDS=44V, VGS=0V

- - 1

A

Gate Leakage Current

I

GSS

VGS= 20V, VDS=0V

- -

100

nA

Gate Threshold Voltage

V

th

VDS=V

GS, ID

=250 A (Note 1)

1.0 1.8 2.5 V

Drain-Source ON Resistance

R

DS(ON)

VGS=10V, ID=4.5A (Note 1)

- 38 50 m

VGS=4.5V, ID=3A (Note 1)

- 60 75

ON State Drain Current

I

D(ON)

VGS=10V, VDS=5V (Note 1)

20 - - A

Forward Transconductance

g

fs

ID=4.5A, VDS=5V (Note 1)

- 7 - S

Source-Drain Diode Forward Voltage

V

SD

IS=1.7A, VGS=0V (Note 1)

- 0.8 1.2 V

Dynamic (Note 2)

Total Gate Charge

Q

g

VDS=48V, ID=4.5A,

V

GS

=10V (Fig.1)

- 17.3 20

nC

VDS=48V, ID=4.5A,

V

GS

=4.5V (Fig.1)

- 8.1 9.5

Gate-Source Charge

Q

gs

VDS=48V, ID=4.5A,

V

GS

=10V (Fig.1)

- 1.8 2.2

Gate-Drain Charge

Q

gd

- 4.2 4.9

Turn-on Delay time

t

d(on)

VDD=30V, ID=4.5A, V

GS

=10V, RG=6 (Fig.2)

- 3.2 3.8

ns

Turn-on Rise time

t

r

- 10.1 12

Turn-off Delay time

t

d(off)

- 13.3 15.3

Turn-off Fall time

t

f

- 8.3 9.6

Input Capacitance

C

iss

VDS=25V, VGS=0V, f=1.0MHz

- 700 805

pF

Output Capacitance

C

oss

- 82 95

Reverse transfer Capacitance

C

rss

- 50 58

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KMB4D8DN55Q

Revision No : 2

20

16

(A)

D

12

8

Drain Current I

4

0

0.5

1.6

th

1.4

ID - V

DS

VGS= 5V

VGS=6V

VGS=10V

1.0 1.5 2.0 2.5 3.0

VGS=4.5V

VGS=4V

VGS=3V

Drain - Source Voltage VDS (V)

Vth - T

j

VDS = V IDS = 250µA

ID - V

GS

25

20

(A)

D

15

10

Tj = 25

Drain Current I

5

0

C

Tj = 125 C

2.0 3.006.01.0 5.04.0

Tj = -55

C

Gate - Source Voltage VGS (V)

IS - V

SD

20

GS

(A)

S

10

1.2

1.0

0.8

0.6

Normalized Threshold Voltage V

0.4

-75 -50 -25

05010025

Junction Temperature Tj ( )

R

DS(ON)

1.6

VGS = 10V

= 4.5A

I

D

1.4

1.2

1.0

0.8

0.6

Normalized On Resistance

0

-75 -50 -25 25 50 75 1501251000

Junction Temperature Tj ( )

- T

Reverse Drain Current I

1

15012575

Source - Drain Voltage V

0.8 1.41.20.6 1.00.4

(V)

SD

C

C - V

j

900

750

600

450

300

Capacitance (pF)

150

0

C

iss

C

oss

C

rss

10

Drain - Source Voltage V

DS

25

(V)

150 5 20 30

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KMB4D8DN55Q

Revision No : 2

)

Qg - V

10

VD = 48V I

= 4.5A

D

8

(V)

GS

6

4

2

Gate - Source Voltage V

0

GS

21186120249153

1

10

1

0.5

0.2

0.1

-1

10

0.05

0.02

Normalized Transient Thermal Resistance

0.01

-2

10

-5

10

Single Pluse

-4

10

-3

10

Square Wave Pulse Duration (sec

Gate - Charge

R

th

-2

-1

10

Qg (nC)

1

P

DM

1. R

2. R

3. T

t

1

t

2

= r(t) *R

thJA(t)

= See data sheet

thJA

JM-TA=PDM*RthJA(t)

thJA

4. Duty Cycle, D=t1/t2

1

10

2

10

3

10

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KMB4D8DN55Q

Revision No : 2

Fig. 1 Gate Charge

I

D

0.5 V DSS

1.0 mA

Schottky Diode

V

GS

V

GS

10

V

I

D

V

DS

Q

gs

Q

gd

Q

g

Q

Fig. 2 Resistive Load Switching

0.5 V

DSS

6Ω

10

V

GS

t

R

L

V

DS

t

d(on)

V

GS

10%

DS

90%

V

on

t

r

t

d(off)

t

off

t

f