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SEMICONDUCTOR
TECHNICAL DATA
KMB4D5DN60QA
Dual N-Ch Trench MOSFET
Revision No : 0
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low
on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly
suitable for load switch and Back light inverter.
FEATURES
V
DSS
=60V, ID=4.5A.
Drain-Source ON Resistance.
R
DS(ON)
=56m (Max.) @ VGS=10V
R
DS(ON)
=77m (Max.) @ VGS=4.5V
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted)
Note> *Surface Mounted on 1” 1” FR4 Board, t 10sec.
PIN CONNECTION (TOP VIEW)
CHARACTERISTIC SYMBOL PATING UNIT
Drain Source Voltage
V
DSS
60 V
Gate Source Voltage
V
GSS
20
V
Drain Current
DC@Ta=25
ID*
4.5 A
Pulsed
I
DP
20 A
Drain Source Diode Forward Current
I
S
3 A
Drain Power Dissipation
@Ta=25
PD*
2
W
Maximum Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55~150
Thermal Resistance, Junction to Ambient
R
thJA
*
62.5
/W
H
P
D
A
8
1
5
4
T
G
A
B1
B2
D
G
B2
B1
H
L
P
FLP-8
KMB4D5DN
60QA
L
MILLIMETERSDIM
4.85 0.2
3.94 0.2
6.02 0.3
0.4 0.1
0.15+0.1/-0.05
1.63 0.2
0.65 0.2
0.20+0.1/-0.05T
1.27
_
+
_
+
_
+
_
+
_
+
_
+
1
S
1
G
S
2
G
2
1
3
4
2
8
7
6
5
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
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KMB4D5DN60QA
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
VGS=0V, IDS=250 A
60 - - V
Drain Cut-off Current
I
DSS
VGS=0V, VDS=48V
- - 1
A
Gate Leakage Current
I
GSS
VGS= 20V, VDS=0V
- -
100
nA
Gate Threshold Voltage
V
th
VDS=V
GS, ID
=250 A
1.0 - 3.0 V
Drain-Source ON Resistance
R
DS(ON)
*
VGS=10V, ID=4.5A
- 46 56
m
VGS=4.5V, ID=3A
- 64 77
Forward Transconductance
gfs* VDS=5V, ID=4.5A
- 11 - S
Dynamic
Input Capaclitance
C
iss
*
VDS=30V, VGS=0V, f=1MHz
- 490 -
pFOuput Capacitance
C
oss
*
- 45 -
Reverse Transfer Capacitance
C
rss
*
- 25 -
Total Gate Charge
VGS=10V
Qg*
VDS=30V, VGS=10V, ID=4.5A
- 10.4 -
nC
VGS=4.5V
- 5.1 -
Gate-Source Charge
Qgs*
- 2.3 -
Gate-Drain Charge
Qgd*
- 2.2 -
Turn-On Delay Time
t
d(on)
*
VDS=30V, VGS=10V
I
D
=4.5 , RG=3
- 12.4 -
ns
Turn-On Rise Time
tr*
- 34.5 -
Turn-Off Delay Time
t
d(off)
*
- 30.7 -
Turn-Off Fall Time
tf*
- 5.0 -
Source-Drain Diode Ratings
Source-Drain Forward Voltage
V
SDF
* VGS=0V, IS=1A
- 0.7 1.0 V
Note> *Pulse Test : Pulse Width 300 , Duty Cycle 2%
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KMB4D5DN60QA
Revision No : 0
20
VGS=10V
15
(A)
D
10
5
Drain Current I
0
0
20
VDS=5V
15
(A)
D
10
Fig1. ID - V
VGS=5.0V
1
2345
DS
VGS=4.5V
Drain - Source Voltage VDS (V)
Fig3. ID - V
GS
VGS=4.0V
VGS=3.5V
100
)
Ω
(m
DS(ON)
On-Resistance R
(mΩ)
DS(ON)
Ta=25 C
90
80
70
60
50
40
30
20
05
150
VGS=10V, ID=4.5A
120
90
60
Fig2. R
DS(ON)
VGS=4.5V
VGS=10V
10 15 20
Drain Current I
Fig4. R
DS(on)
- I
D
- T
D
(A)
j
5
Drain Current I
0
0
12 435
Gate Source Voltage VGS (V)
Fig5. V
5
VGS=V
DS
I
(V)
th
Gate Threshold Voltage V
=250µA
D
4
3
2
1
0
-75 -50 -25 0 50 10075 125 15025
125
th
C
- T
C
25
30
SourceOn-Resistance R
0
Drain-
j
100
10
(A)
S
1
0.1
Drain Current I
0.01
0.001
-25 15050 75 100 12525-50 0-75
Junction Temperature Tj ( )
Fig 6. IS - V
0.20
SDF
125
C
0.60.4 1.21.00.8
C
25
C
Junction Temperature Tj ( )
C
Source-Drain Forward Voltage V
SDF
(V)
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KMB4D5DN60QA
Revision No : 0
Fig7. VGS - Q
10
(V)
GS
Gate to Source Voltage V
VDS=30V
=4.5A
I
D
8
6
4
2
0
420
Gate Charge Q
g
(A)
D
g
812106
(nC)
2
10
Operation in this
area is limited by R
1
10
0
10
800
600
400
200
Capacitance C (pF)
Fig9. Safe Operation Area
DS(ON)
0
200µs
1ms
Fig8. C - V
iss
C
C
oss
C
rss
100
Drain - Source Voltage V
DS
DS
f=1MHz
30 4020
(V)
-1
10
Drain Current I
VGS= 10V
SINGLE PULSE
-2
10
-2
10
Fig9. Transient Thermal Response Curve
0
10
Duty Cycle = 0.5
0.2
-1
10
0.1
0.05
0.02
-2
10
Single Pulse
Normalized Transient Thermal Resistance
-3
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
Drain - Source Voltage V
-1 10
10
10ms
100ms
1s
10s
DC
2
10
(V)
DS
0
3
10
P
DM
t
1
1. Duty Cycle, D =
2. Per Unit Base = R
1
10
10
t
2
t
1
t
2
= 62.5 C/W
thJA
2
3
10
Square Wave Pulse Duration tw (sec)
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