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SEMICONDUCTOR
TECHNICAL DATA
KMB3D5PS30QA
SBD and P-Ch Trench MOSFET
Revision No : 2
GENERAL DESCRIPTION
It is particularly suited for switching such as DC/DC Converters.
It is driven as low as 4.5V and fast switching, high efficiency.
FEATURES
V
DSS
=-30V, ID=-3.5A.
Drain-Source ON Resistance.
R
DS(ON)
=85m (Max.) @ VGS=-10V
R
DS(ON)
=180m (Max.) @ VGS=-4.5V
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted)
B2
G
H
B1
1
4
5
8
A
P
D
L
T
FLP-8
0.20+0.1/-0.05T
P
1.27
MILLIMETERSDIM
A
4.85 0.2
+
_
B1
3.94 0.2
+
_
B2
6.02 0.3
+
_
D
0.4 0.1
+
_
G
0.15+0.1/-0.05
H
1.63 0.2
+
_
L
0.65 0.2
+
_
Note : *Sorface Mounted on FR4 Board
Schottky Diode Maximum Ratings (Ta=25 Unless otherwise noted)
CHARACTERISTIC SYMBOL PATING UNIT
Repetitive Peak Reverse Voltage
V
RRM
30 V
Average Forward Current
I
F
1.4 A
CHARACTERISTIC SYMBOL PATING UNIT
Drain Source Voltage
V
DSS
-30 V
Gate Source Voltage
V
GSS
20
V
Drain Current
DC
ID *
-3.5 A
Pulsed
I
DP
-20 A
Drain Power Dissipation
25
PD *
1.4 W
100
1
W
Maximum Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55~150
Thermal Resistance, Junction to Ambient
R
thJA
*
90
/W
Marking
Type Name
KMB3D5PS
30QA
702
Lot No.
PIN CONNECTION (TOP VIEW)
1
A
2
A
S
3
G
4
8
7
6
5
C
C
D
D
1
2
3
4
8
7
6
5
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KMB3D5PS30QA
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
ID=-250 A, VGS=0V
-30 - - V
Drain Cut-off Current
I
DSS
VDS=-30V, VGS=0V
- - -1
A
Gate Leakage Current
I
GSS
VGS= 20V, VDS=0V
- -
100
nA
Gate Threshold Voltage
V
th
VDS=V
GS, ID
=-250 A
-1.0 - -3.0 V
Drain-Source ON Resistance
R
DS(ON)
VGS=-10.0V, ID=-2.5A
- 66 85.0
m
VGS=-4.5V, ID=-1.8A
- 125 180.0
Forward Transconductance
G
fs
VDS=-10V, ID=-2.5A
- 5.0 - S
Dynamic
(Note 3)
Input Capaclitance
C
iss
VDS=-10V, f=1MHz
- 550 -
pFOuput Capacitance
C
oss
- 210 -
Reverse Transfer Capacitance
C
rss
- 50 -
Total Gate Charge
Q
g
VDS=-10V, VGS=-10V, ID=-2.5A
- 8.7 -
nCGate-Source Charge
Q
gs
- 1.9 -
Gate-Drain Charge
Q
gd
- 1.3 -
Turn-On Delat Time
t
d(on)
VDD=-10V, VGS=-10V
I
D
=10 , RG=50 (Note 1)
- 7 -
ns
Turn-On Rise Time
t
r
- 9 -
Turn-On Deley Time
t
d(off)
- 14 -
Turn-On Fall Time
t
f
- 8 -
Source-Drain Diode Ratings
Source-Drain Forward Voltage
V
SDF
IDR=-1.7A, VGS=0V
- - -1.2 V
Note
1. Pulse Test : Pulse width 10 , Duty cycle 1%
SHOTTKY DIODE ELECTRICAL CHARACTERISTICS
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage Drop
V
F
IF=1.0A
- 0.45 0.5 V
Reverse Leakage Current
I
R
VR=30V
- 0.004 0.1 mA
Junction Capactitance
C
T
VR=10V
- 62 - PF
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KMB3D5PS30QA
Revision No : 2
20
10.0V
16
(A)
D
12
8
Drain Current I
4
0
0
20
Common Source
VDS=10V
Pulse Test
16
(A)
D
12
5.0V
2
Fig1. I
4.5V
- V
D
GS
Common Source
Tc=25
Pulse Test
4.0V
46810
Drain - Source Voltage VGS (V)
Fig3. I
- V
D
Tc=-55
GS
25
C
C
C
3.5V
VGS=3.0V
125
Fig2. R
0.4
(Ω)
Source On Resistance R
Drain
DS(ON)
0.32
0.24
0.16
0.08
Common Source
Tc=25
Pulse Test
0
0
C
VGS=4.5V
VGS=10V
3
- I
DS(on)
6912
D
Drain - Current ID (A)
Fig4. R
200
Common Source
=10V
V
DS
Pulse Test
160
C
120
(mΩ)
DS(on)
- T
j
ID=2.5A
8
Drain Current I
4
0
1
2345
Gate-Source Volatage VGS (V)
Fig5. V
5
Common Source
V
(V)
th
Gate Threshold Voltage V
GS=VDS
ID=250µA
4
Pulse Test
3
2
1
0
-80 -40 40 80 1601200
th
- T
DS(ON)
80
R
Source On Resistance
40
Drain
0
j
10
(A)
DR
8
6
4
2
0
Reverse Source-Drain Current I
016012080-40 40-80
Junction Temperature Tj ( )
Fig6. I
- V
DR
0.8 1.200.4 1.62.0
C
SDF
Common Source
Tc= 25
Pulse Test
C
Junction Temperature Tj ( )
C
Source - Drain Forward Voltage V
SDF
(V)
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KMB3D5PS30QA
Revision No : 2
Fig7. Forward Voltage Drop
10
8
(A)
F
6
4
2
Forward Current I
0
Forward Voltage Drop V
0
10
Tj=25
Fig8. Safe Operation Area
2
10
Operation in this
area is limited by R
1
10
(A)
D
0
10
-1
10
C
Tj=-50
C
1.20.8 1.6
(V)
F
2.00.40
Drain Current I
VGS= 10V
SINGLE PULSE
-2
10
-1
10
DS(ON)
1ms
10ms
100ms
1s
10s
DC
0
10
1
10
Drain - Source Voltage V
2
10
(V)
DS
3
10
Fig9. Transient Thermal Response Curve
Duty Cycle = 0.5
0.2
-1
10
0.1
0.05
Thermal Resistance
0.02
-2
10
Normalized Effective Transient
-4
10
Single Pluse
-3
10
-2
10
-1 10
10
Square Wave Pulse Duration (sec)
P
DM
t
1
t
2
Duty Cycle D = t1/t
0
1
10
10
2
2
3
10
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KMB3D5PS30QA
Revision No : 2
Fig10. Gate Charge Circuit and Wave Form
Schottky
1.0 mA
Diode
V
GS
I
D
V
0.5 V
DSS
I
D
DS
10 V
V
GS
Q
Q
gs
Q
gd
Q
g
Fig11. Resistive Load Switching
0.5 V
DSS
50Ω
10 V
V
GS
V
R
L
V
DS
DS
V
GS
10%
t
d(on)
90%
t
t
r
t
on
d(off)
t
f
t
off
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