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2008. 2. 19 1/5
SEMICONDUCTOR
TECHNICAL DATA
KMB3D5N40SA
N-Ch Trench MOSFET
Revision No : 0
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for Load switch and Back-Light
Inverter.
FEATURES
V
DSS
=40V, ID=3.5A
Drain-Source ON Resistance
R
DS(ON)
=45m (Max.) @ VGS=10V
R
DS(ON)
=62m (Max.) @ VGS=4.5V
Super High Dense Cell Design
MAXIMUM RATING (Ta=25 )
Note > *Surface Mounted on 1” 1” FR4 Board, t ≤ 5sec
PIN CONNECTION (TOP VIEW)
CHARACTERISTIC SYMBOL N-Ch UNIT
Drain-Source Voltage
V
DSS
40 V
Gate-Source Voltage
V
GSS
20
V
Drain Current
DC@Ta=25
I
D
3.5
A
DC@Ta=70
2.8
Pulsed
I
DP
14
Drain-Source-Diode Forward Current
I
S
1.0 A
Drain Power Dissipation
Ta=25
P
D
1.25
W
Ta=70
0.8
Maximum Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Thermal Resistance, Junction to Ambient
R
thJA
100
/W
E
B
LL
DIM MILLIMETERS
A
B
C
A
G
2
H
1
PP
N
C
M
K
D
3
D
E
G1.90
H
J
K
L
M
N
P7
J
_
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
SOT-23
KN1
D
3
2
1
3
2
1
GS
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KMB3D5N40SA
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
IDS=250 A, VGS=0V,
40 - - V
Drain Cut-off Current
I
DSS
VGS=0V, VDS=32V
- - 0.5
A
VGS=0V, VDS=32V, Tj=55
- - 10
Gate Leakage Current
I
GSS
VGS= 20V, VDS=0V
- -
100
nA
Gate Threshold Voltage
V
th
VDS=V
GS, ID
=250 A
1.0 - 3.0 V
Drain-Source ON Resistance
R
DS(ON)
*
VGS=10V, ID=3.5A
- 36 45
m
VGS=4.5V, ID=3.0A
- 56 62
On-State Drain Current
I
D(ON)
*
VGS=10V, VDS≥4.5V
6 - - A
Forward Transconductance
gfs* VDS=10V, ID=3.5A
- 10 - S
Dynamic
Input Capaclitance
C
iss
VDS=20V, f=1MHz, VGS=0V
- 315 -
pFOuput Capacitance
C
oss
- 69 -
Reverse Transfer Capacitance
C
rss
- 39 -
Total Gate Charge
Qg*
VDS=20V, VGS=0V, ID=3.5A
- 6.4 10
nCGate-Source Charge
Qgs*
- 0.7 -
Gate-Drain Charge
Qgd*
- 2.1 -
Turn-On Delat Time
t
d(on)
*
VDD=20V, VGS=10V
I
D
=1A, RG=6
- 5 10
ns
Turn-On Rise Time
tr*
- 12 20
Turn-Off Deley Time
t
d(off)
*
- 20 30
Turn-Off Fall Time
tf*
- 15 25
Source-Drain Diode Ratings
Source-Drain Forward Voltage
V
SDF
* VGS=0V, IS=1A
- 0.8 1.2 V
Note > *Pulse Test : Pulse width <300 , Duty cycle < 2%
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KMB3D5N40SA
Revision No : 0
20
16
(A)
D
12
8
4
0
20
V
DS=VGS
16
(A) Drain Current I
D
12
Fig1. I
VGS=10, 9, 8, 7, 6, 5V
2468100
D
- V
DS
Drain - Source Voltage VDS (V)
Fig3. I
D
- V
GS
VGS=4V
VGS=3V
Fig2. R
500
(mΩ)
400
DS(ON)
300
200
100
Source On Resistance R
0
Drain
100
(mΩ)
80
DS(ON)
60
Ta=25
0
C
4
Drain - Current ID (A)
VGS=10V
=3.5A
I
D
DS(ON)
812 2016
Fig4. R
DS(ON)
- I
- T
D
VGS=4.5V
VGS=10V
j
8
Drain Current I
4
0
01
Gate-Source Volatage VGS (V)
Fig5. V
5
VDS=V
(V)
th
4
3
2
1
Gate Threshold Voltage V
0
-50 -25 0 50 10075 125 15025
I
=250µA
D
GS
125
C
25
C
2345
- T
th
-55
C
j
40
20
Source On-Resistance R
0
Drain-
-25 15050 75 100 12525-50 0
Junction Temperature Tj ( )
10
(A)
S
8
6
4
2
Reverse Drain Current I
0
C
Fig6. IS-V
0.8 1.200.4 1.62.0
SDF
Junction Temperature Tj ( )
C
Source - Drain Forward Voltage V
SDF
(V)
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KMB3D5N40SA
Revision No : 0
10
VDS=20V
=3.5A
I
(V)
D
8
GS
6
4
2
Gate - Source Voltage V
0
0
2
Total Gate - Charge
Fig7. V
4
GS
- Q
g
Qg (nC)
100.0
10.0
(A)
D
1.0
1086
Fig9. Safe Operation Area
R
Limited
DS(ON)
Fig8. C - V
DS
800
600
400
200
Capacitance C (pF)
0
C
iss
C
oss
C
rss
08162432 40
Drain - Source Voltage V
100µs
1ms
10ms
DS
VGS=0V
f = 1MHz
(V)
Drain Current I
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.01
0.05
0.02
-4
10
Single Pluse
-3
10
Thermal Resistance
Normalized Effective Transient
0.1
VGS= 10V
SINGLE PULSE
a
= 25 C
T
0.01
0.1
110100
Drain - Source Voltage V
DS
Fig10. Transient Thermal Response Curve
-2
10
-1 1
10
(V)
100ms
1s
10s
DC
P
DM
t
1
Duty Cycle D = t1/t
10 100 600
t
2
2
Square Wave Pulse Duration (sec)
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2008. 2. 19 5/5
KMB3D5N40SA
Revision No : 0
Fig11. Gate Charge Circuit and Wave Form
Schottky
1.0 mA
Diode
V
GS
0.5 V
DSS
I
D
V
GS
10 V
I
D
V
DS
Q
gs
Q
gd
Q
g
Q
Fig12. Resistive Load Switching
0.5 V
DSS
6Ω
10 V
V
R
L
V
DS
V
GS
DS
V
GS
10%
t
d(on)
90%
t
t
r
t
on
d(off)
t
f
t
off
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