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2008. 5. 26 1/5
SEMICONDUCTOR
TECHNICAL DATA
KMB054N40DA
N-Ch Trench MOSFET
Revision No : 4
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for Back-light Inverter and Power
Supply.
FEATURES
V
DSS
=40V, ID=54A.
Low Drain-Source ON Resistance.
: R
DS(ON)
=8.5m (Max.) @ VGS=10V
: R
DS(ON)
=11m (Max.) @ VGS=4.5V
Super High Dense Cell Design.
High Power and Current Handling Capability.
MAXIMUM RATING (Ta=25 Unless otherwise Noted)
PIN CONNECTION (TOP VIEW)
Note 1) R
thJC
means that the infinite heat sink is mounted.
Note 2) Surface Mounted on 1
1 Pad of 2 oz copper.
CHARACTERISTIC SYMBOL N-Ch UNIT
Drain-Source Voltage
V
DSS
40 V
Gate-Source Voltage
V
GSS
20
V
Drain Current
DC@TC=25 (Note1)
I
D
54
A
Pulsed (Note2)
I
DP
100
Drain-Source-Diode Forward Current
I
S
100 A
Drain Power Dissipation
@TC=25 (Note1)
P
D
45
W
@Ta=25 (Note2)
3.1
Maximum Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Thermal Resistance, Junction to Case (Note1)
R
thJC
2.8
/W
Thermal Resistance, Junction to Ambient (Note2)
R
thJA
40
/W
H
G
FF
123
A
C
J
K
D
B
E
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
DIM
L
N
M
MILLIMETERS
A
6.60 0.20+
6.10 0.20+
B
5.34 0.30+
C
D
0.70 0.20+
E
2.70 0.15
2.30 0.10
F
0.96 MAX
G
0.90 MAX
H
1.80 0.20+
J
2.30 0.10+
K
0.50 0.10
L
M
0.50 0.10
0.70 MIN
N
_
_
_
_
_
+
_
+
_
_
_
+
_
+
D
2
Marking
KMB
054N40
DA
Type Name
Lot No
2
1
1
3
3
GS
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KMB054N40DA
Revision No : 4
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
VGS=0V, ID=250 A
40 - - V
Drain Cut-off Current
I
DSS
VGS=0V, VDS=32V
- - 1
A
Gate Leakage Current
I
GSS
VGS= 20V, VDS=0V
- -
100
nA
Gate Threshold Voltage
V
th
VDS=V
GS, ID
=250 A
1 1.9 3 V
Drain-Source ON Resistance
R
DS(ON)*
VGS=10V, ID=14A
- 7 8.5
m
VGS=4.5V, ID=11A
- 8.5 11
VGS=10V, ID=14A, Tj=125
- 10.4 14
Forward Transconductance
g
fs*
VDS=10V, ID=20A
- 58 - S
Dynamic
Input Capacitance
C
iss
VDS=20V, f=1MHz, VGS=0V
- 2340 -
pFOuput Capacitance
C
oss
- 420 -
Reverse Transfer Capacitance
C
rss
- 250 -
Total Gate Charge
VGS=10V Qg*
VDS=20V, VGS=10V, ID=14A
- 50 -
nC
VGS=5V Qg*
- 30 -
Gate-Source Charge
Qgs*
- 8 -
Gate-Drain Charge
Qgd*
- 13 -
Turn-On Delay Time
t
d(on)
*
VDD=20V, VGS=10V
I
D
=1A, RG=6
- 15 -
ns
Turn-On Rise Time
tr*
- 20 -
Turn-Off Delay Time
t
d(off)
*
- 90 -
Turn-Off Fall Time
tf*
- 25 -
Source-Drain Diode Ratings
Source-Drain Forward Voltage
V
SDF
*
VGS=0V, IS=14A
- 0.8 1.2
V
Note>* Pulse Test : Pulse width <300 , Duty cycle < 2%
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2008. 5. 26 3/5
KMB054N40DA
Revision No : 4
100
80
60
40
20
0
Common Source
V
DS
Pulse Test
80
60
6.0V
=5V
(A)
D
Drain Current I
100
(A)
D
Fig1. I
VGS=10V
4.5V
0.5011.522.5
D
5.0V
- V
DS
4.0V
3.5V
3.0V
Drain - Source Voltage VDS (V)
Fig3. I
D
- V
GS
30
(mΩ)
DS(ON)
Common Source
Ta=25
Pulse Test
15
C
Source On Resistance R
0
Drain
0
6
Drain - Current ID (A)
Fig4. R
20
(mΩ)
DS(ON)
Common Source
V
GS
Pulse Test
16
12
=10V, ID=14A
Fig2. R
DS(ON)-ID
VGS=4.5V
VGS=10V
12 18 24 30
- T
DS(on)
j
40
Drain Current I
20
0
1 1.5
Ta=125
22.533.544.5
Gate Source Volatage VGS (V)
Fig5. V
5
Common Source
V
(V)
th
Gate Threshold Voltage V
GS=VDS
ID=250µA
4
Pulse Test
3
2
1
0
-75 -50 -25 0 50 10075 125 15025
8
25
C
-55
C
- T
th
C
j
4
SourceOn-Resistance R
0
Drain-
-25 15050 75 100 12525-50 0-75
Junction Temperature Tj ( )
100
80
(A)
S
60
40
Drain Current I
20
0
C
Fig6. I
- V
S
SDF
0.8 1.20 0.4 1.6 2.0
Junction Temperature Tj ( )
C
Source - Drain Forward Voltage V
SDF
(V)
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KMB054N40DA
Revision No : 4
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2008. 5. 26 5/5
KMB054N40DA
Revision No : 4
Fig11. Gate Charge Circuit and Wave Form
Schottky
1.0 mA
Diode
V
GS
0.5 V
DSS
I
D
V
GS
10 V
I
D
V
DS
Q
gs
Q
gd
Q
g
Q
Fig12. Resistive Load Switching
0.5 V
DSS
6Ω
10 V
V
R
L
V
DS
V
GS
DS
V
GS
10%
t
d(on)
90%
t
t
r
t
on
d(off)
t
f
t
off
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