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2006. 4. 24 1/6
SEMICONDUCTOR
TECHNICAL DATA
KMB050N60P
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
Revision No : 1
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction , electronic lamp ballasts based on half bridge topology and
switching mode power supplies.
FEATURES
V
DSS
= 60V, ID= 50A
Drain-Source ON Resistance :
R
DS(ON)
=0.022 @VGS= 10V
Qg(typ.) = 32nC
Improved dv/dt capacity, high Ruggedness
Maximum Junction Temperature Range (175 )
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
V
DSS
60 V
Gate-Source Voltage
V
GSS
20
V
Drain Current
@TC=25
I
D
50
A
@TC=100
35
Pulsed (Note1)
I
DP
200
Single Pulsed Avalanche Energy
(Note 2)
E
AS
493
mJ
Repetitive Avalanche Energy
(Note 1)
E
AR
12
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt 7.0
V/ns
Drain Power
Dissipation
Tc=25
P
D
120 W
Derate above 25
0.8
W/
Maximum Junction Temperature
T
j
175
Storage Temperature Range
T
stg
-55 175
Thermal Characteristics
Thermal Resistance, Junction-to-Case
R
thJC
1.24
/W
Thermal Resistance, Case-to-Sink
R
thCS
0.5
/W
Thermal Resistance, Junction-toAmbient
R
thJA
62.5
/W
A
F
E
I
K
M
D
NN
123
L
G
B
Q
J
1. GATE
2. DRAIN
3. SOURCE
O
C
DIM MILLIMETERS
P
H
A
B
C
D
E
F
G
H
K
M
N
O
Q
I
J
L
P
_
9.9 0.2
+
15.95 MAX
1.3+0.1/-0.05
_
+
0.8 0.1
_
3.6 0.2
+
_
+
2.8 0.1
3.7
0.5+0.1/-0.05
1.5
_
+
13.08 0.3
1.46
_
+
1.4 0.1
_
+
1.27 0.1
_
+
2.54 0.2
_
+
4.5 0.2
_
+
2.4 0.2
_
9.2 0.2
+
TO-220AB
D
G
S
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2006. 4. 24 2/6
KMB050N60P
Revision No : 1
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
ID=250 A, VGS=0V
60 - - V
Breakdown Voltage Temperature Coefficient
BV
DSS
/ TjID=250 A, Referenced to 25
- 0.07 -
V/
Drain Cut-off Current
I
DSS
VDS=60V, VGS=0V,
- - 10
A
Gate Threshold Voltage
V
th
VDS=VGS, ID=250 A
2.0 - 4.0 V
Gate Leakage Current
I
GSS
VGS= 20V, VDS=0V
- -
100
nA
Drain-Source ON Resistance
R
DS(ON)
VGS=10V, ID=25A
- 0.018 0.022
Dynamic
Total Gate Charge
Q
g
VDS= 48V, ID= 50A
V
GS
=10V (Note4,5)
- 32 42
nCGate-Source Charge
Q
gs
- 8 -
Gate-Drain Charge
Q
gd
- 12 -
Turn-on Delay time
t
d(on)
VDD= 30V
I
D
=25A
R
G
= 25 (Note4,5)
- 20 50
ns
Turn-on Rise time
t
r
- 100 210
Turn-off Delay time
t
d(off)
- 80 170
Turn-off Fall time
t
f
- 85 180
Input Capacitance
C
iss
VDS=25V, VGS=0V, f=1.0MHz
- 1050 1365
pFReverse Transfer Capacitance
C
rss
- 70 90
Output Capacitance
C
oss
- 460 600
Source-Drain Diode Ratings
Continuous Source Current
I
S
VGS<V
th
- - 50
A
Pulsed Source Current
I
SP
- - 200
Diode Forward Voltage
V
SD
IS=50A, VGS=0V
- - 1.5 V
Reverse Recovery Time
t
rr
IS=50A, VGS=0V,
dIs/dt=100A/
s
- 50 - ns
Reverse Recovery Charge
Q
rr
- 70 -
C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=230
H, IS=50A, VDD=25V, RG=25 , Starting Tj=25 .
Note 3) I
S
50A, dI/dt 300A/ , VDDBV
DSS
, Starting Tj=25 .
Note 4) Pulse Test : Pulse width
300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
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2006. 4. 24 3/6
KMB050N60P
Revision No : 1
V
GS
2
TOP : 15.0 V
10
10.0 V
8.0 V
7.0 V
(A)
6.0 V
5.5 V
D
5.0 V
Bottom : 4.5 V
1
10
Drain Current I
0
10
-1
10
DSS
1.2
VGS = 0V
= 250
I
DS
1.1
1.0
ID - V
DS
0
10
Drain - Source Voltage VDS (V)
BV
- T
DSS
j
ID - V
GS
VDS = 30V
250µs pulse test
2
10
(A)
D
175
1
10
C
-55
25
C
C
Drain Current I
0
1
10
10
684102
Gate - Source Voltage VGS (V)
0.05
(Ω)
0.04
DS(ON)
0.03
0.02
R
DS(ON)
V
= 10V
GS
- I
D
V
= 20V
GS
0.9
0.8
Normalized Breakdown Voltage BV
-100 -50
050
Junction Temperature Tj ( )
IS - V
SD
VGS = 0V
2
250µs pulse test
10
(A)
S
1
10
175
25
C
C
Reverse Drain Current I
0
10
0.2 0.4 0.80.6 1.21.0 1.61.4
Source - Drain Voltage V
100
SD
(V)
0.01
On - Resistance R
0.00
200150
C
010050 150 200
Drain Current ID (A)
2.5
2.0
V
I
DS
GS
R
= 10V
= 25A
DS(ON)
- T
j
1.5
1.0
0.5
Normalized On Resistance
0.0
0 50-100 -50 100 200
Junction Temperature T
( )
j
150
C
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2006. 4. 24 4/6
KMB050N60P
Revision No : 1
3500
3000
2500
2000
C
C
1500
1000
Capacitance (pF)
500
0
-1
10
3
10
(A)
2
D
10
1
10
Drain Current I
0
10
10
C
Tc= 25
T
= 150
j
Single nonrepetitive pulse
-1
C - V
DS
oss
iss
C
rss
0
10
Drain - Source Voltage V
Safe Operation Area
Operation in this
area is limited by R
DC
C
0
10
Drain - Source Voltage V
10
Frequency = 1MHz
1
10
(V)
DS
DS(ON)
100µs
1ms
10ms
1
(V)
DS
Qg- V
GS
12
ID= 50A
10
(V)
GS
8
V
= 30V
DS
V
= 48V
DS
6
4
2
Gate - Source Voltage V
0
0
10
15 255
Gate - Charge
ID - T
20
Qg (nC)
j
3530
60
50
(A)
40
D
30
20
Drain Current I
10
2
10
0
50
75
25
Junction Temperature Tj ( )
100
C
175150125
R
th
0
10
Duty=0.5
C
0.2
0.1
-1
10
0.05
0.02
1
0
0.
Single Pul
Transient Thermal Impedance [ / W]
-2
10
-5
10
se
-4
10
10
-3
-2
10
P
DM
- Duty Factor, D= t1/t
thJC
T
=
- R
-1
10
t
1
j(max)
P
10
t
2
2
- T
c
D
0
1
10
Square Wave Pulse Duration (sec)
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2006. 4. 24 5/6
KMB050N60P
Revision No : 1
- Gate Charge
V
GS
I
D
0.8 x V
DSS
1.0 mA
- Single Pulsed Avalanche Energy
50V
Fast
Recovery
Diode
V
GS
10 V
I
D
V
DS
BV
DSS
Q
gs
EAS= LI
Q
gd
1
2
AS
2
BV
BV
DSS
Q
DSS
- V
g
DD
Q
L
I
AS
- Resistive Load Switching
0.5 x V
DSS
10 V
10V
25Ω
25 Ω
I
(t)
V
DS
V
V
GS
DD
D
VDS(t)
Time
t
p
V
DS
90%
R
L
10%
V
GS
V
DS
V
GS
t
d(on)
t
r
t
on
t
d(off)
t
f
t
off
Page 6
2006. 4. 24 6/6
KMB050N60P
Revision No : 1
- Source - Drain Diode Reverse Recovery and dv /dt
0.8 x V
DSS
I
F
10V
DUT
driver
V
GS
V
DS
I
S
I
SD
(DUT)
V
DS
(DUT)
Body Diode Forword Current
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
Body Diode Forword Voltage drop
di/dt
V
DD
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