Page 1
2009. 11. 9 1/2
SEMICONDUCTOR
TECHNICAL DATA
KMB035N40DB
N-Ch Trench MOSFET
Revision No : 1
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for Back-light Inverter and Power
Supply.
FEATURES
·V
DSS
=40V, ID=35A.
·Low Drain to Source On-state Resistance.
: R
DS(ON)
=12.0mΩ(Max.) @ V
GS
=10V
: R
DS(ON)
=17.0mΩ(Max.) @ V
GS
=4.5V
MAXIMUM RATING (Ta=25℃ Unless otherwise Noted)
PIN CONNECTION (TOP VIEW)
DPAK (1)
DIM
MILLIMETERS
A
A
B
B
C
C
D
D
F
FF
H
G
K
G
J
L
K
L
M
0.96 MAX
0.90 MAX
E
E
M
N
H
0.70 MIN
O
Max 0.1
N
123
6.60 0.20+
_
6.10 0.20+
_
5.34 0.30+
_
0.70 0.20+
_
2.70 0.15
+
_
2.30 0.10
+
_
1.80 0.20+
_
0.50 0.10
+
_
2.30 0.10+
_
0.50 0.10
+
_
J
O
Note 1) R
thJC
means that the infinite heat sink is mounted.
Note 2) Surface Mounted on 1
×1 Pad of 2 oz copper.
CHARACTERISTIC SYMBOL N-Ch UNIT
Drain to Source Voltage
V
DSS
40 V
Gate to Source Voltage
V
GSS
±20
V
Drain Current
DC@T
C
=25℃ (Note1)
I
D
35
A
Pulsed (Note2)
I
DP
140
Drain Power Dissipation
@T
C
=25℃ (Note1)
P
D
43
W
@Ta=25℃ (Note2)
3.1
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Thermal Resistance, Junction to Case (Note1)
R
thJC
2.9
℃/W
Thermal Resistance, Junction to Ambient (Note2)
R
thJA
40
℃/W
* Weight : 0.33g(typ)
Page 2
KMB035N40DB
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain to Source Breakdown Voltage
BV
DSS
VGS=0V, I
D
=250μA
40 - - V
Drain Cut-off Current
I
DSS
VGS=0V, VDS=32V
- - 1
μA
Gate to Source Leakage Current
I
GSS
V
GS
=±20V, V
DS
=0V
- -
±100
nA
Gate to Source Threshold Voltage
V
th
VDS=V
GS, ID
=250μA
1.7 - 3.0 V
Drain to Source On Resistance
R
DS(ON)
VGS=10V, ID=18A (Note3)
- 8.0 12.0
mΩ
VGS=4.5V, ID=16A (Note3)
- 13.0 17.0
Forward Transconductance
g
fs
VDS=5V, ID=18A (Note3)
- 48 - S
Dynamic
Input Capacitance
C
iss
VDS=20V, f=1MHz, VGS=0V
- 970 -
pFOuput Capacitance
C
oss
- 205 -
Reverse Transfer Capacitance
C
rss
- 100 -
Gate Resistance
R
g
f=1MHz - 2.9 -
Ω
Total Gate Charge
VGS=10V Q
g
VDS=20V, VGS=10V, ID=18A (Note3)
- 20.2 -
nC
VGS=5V Q
g
- 10.7 -
Gate to Source Charge
Q
gs
- 5.1 -
Gate to Drain Charge
Q
gd
- 4.6 -
Turn-On Delay Time
t
d(on)
VDD=20V, VGS=10V
ID=18A, R
G
=6Ω (Note3)
- 18 -
ns
Turn-On Rise Time
t
r
- 17 -
Turn-Off Delay Time
t
d(off)
- 55 -
Turn-Off Fall Time
t
f
- 13 -
Source-Drain Diode Ratings
Continuous Source Current
I
S
- - 35 - A
Pulsed Source Current
I
SP
- - 140 - A
Source to Drain Forward Voltage
V
SD
VGS=0V, IS=3A (Note3)
- 0.8 1.2 V
Reverse Recovery time
t
rr
I
S
=18A, dI/dt=100A/μS
- 24 - ns
Reverse Recovered Charge
Q
rr
I
S
=18A, dI/dt=100A/μS
- 8.8 - nC
Note3) Pulse Test : Pulse width <300㎲ , Duty cycle < 2%
Page 3
2009. 11. 9 3/4
KMB035N40DB
Revision No : 1
Page 4
KMB035N40DB
Revision No : 1
Loading...