Datasheet kmb030n30d Datasheet

2007. 3. 22 1/5

SEMICONDUCTOR

TECHNICAL DATA

KMB030N30D

N-Ch Trench MOSFET

Revision No : 1

General Description

Switching regulator and DC-DC Converter applications.

It s mainly suitable for power management in PC,

portable equipment and battery powered systems.

FEATURES

V

DSS

=30V, ID=30A.

Low Drain-Source ON Resistance.

: R

DS(ON)

=18m (Max.) @ VGS=10V

: R

DS(ON)

=36m (Max.) @ VGS=4.5V

Super High Dense Cell Design.

High Power and Current Handling Capability.

MAXIMUM RATING (Ta=25 )

CHARACTERISTIC SYMBOL RATING UNIT

Drain-Source Voltage

V

DSS

30 V

Gate-Source Voltage

V

GSS

20

V

Drain Current

DC

ID *

30

A

Pulsed

(Note 1)

I

DP

*

75

Source-Drain Diode Current

I

S

20

A

Drain Power Dissipation (Tc=25 )

PD *

50 W

Maximum Junction Temperature

T

j

150

Storage Temperature Range

T

stg

-55 150

Thermal Resistance, Junction to Case

R

thJC

3

/W

Thermal Resistance, Junction to Ambient

R

thJA

*

50

/W

* : Surface Mounted on FR4 Board, t 10sec.

M

G

FF

123

A

C

H

D

B

E

K

DPAK (2)

D

G

S

DIM

J

N

L

MILLIMETERS

6.6 0.2

A

6.1 0.2+

B

5.33 0.1+

C

1.08 0.2

D

2.92 0.3+

E

2.28 0.1

F

G

1.1 MAX

2.3 0.1

H

0.51 0.1+

J

1.01 0.1+

K

L

0.51 0.1+

M

0.8 0.1

N

1.5 0.2+

_

+ _

_

+ _

_

+

_

+

_

+ _

2007. 3. 22 2/5

KMB030N30D

Revision No : 1

ELECTRICAL CHARACTERISTICS (Ta=25 )

Note 1) Pulse test : Pulse width 300 , Duty Cycle 2%.

Note 2) Guaranteed by design. Not subject to production testing.

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage

BV

DSS

ID=250 A, VGS=0V,

30 - - V

Drain Cut-off Current

I

DSS

VGS=0V, VDS=24V

- - 1

A

Gate Leakage Current

I

GSS

VGS= 20V, VDS=0V

- -

100

nA

Gate Threshold Voltage

V

th

VDS=V

GS, ID

=250 A

1.0 1.7 2.5 V

Drain-Source ON Resistance

R

DS(ON)

VGS=10V, ID=20A (Note 1)

- 13 18 m

VGS=4.5V, ID=12A (Note 1)

- 23 36

ON State Drain Current

I

D(ON)

VGS=10V, VDS=10V (Note 1)

40 - - A

Forward Transconductance

g

fs

VDS=10V, ID=20A (Note 1)

- 16 - S

Source-Drain Diode Forward Voltage

V

SD

IS=20A, VGS=0V (Note 1)

0.94 1.3 V

Dynamic (Note 2)

Total Gate Charge

Q

g

VDS=15V, ID=20A, VGS=10V (Fig.1)

- 15.3 -

nC

VDS=15V, ID=20A, VGS=4.5V (Fig.1)

- 7.5 -

Gate-Source Charge

Q

gs

VDS=15V, ID=20A, VGS=10V (Fig.1)

- 2.3 -

Gate-Drain Charge

Q

gd

- 4.2 -

Turn-on Delay time

t

d(on)

VDD=15V, ID=1A,

V

GS

=10V, RG=6 (Fig.2)

- 7.6 -

ns

Turn-on Rise time

t

r

- 23.5 -

Turn-off Delay time

t

d(off)

- 15.8 -

Turn-off Fall time

t

f

- 5 -

Input Capacitance

C

iss

VDS=15V, VGS=0V, f=1.0MHz

- 872 -

pF

Output Capacitance

C

oss

- 196 -

Reverse transfer Capacitance

C

rss

- 105 -

2007. 3. 22 3/5

KMB030N30D

Revision No : 1

20

16

(A)

D

12

8

Drain Current I

4

0

0.5

1.3

th

1.2

1.1

ID - V

DS

VGS=5V

VGS=10,9,8,7,6V

VGS=3V

VGS=2V

1.0 1.5 2.0 2.5 3.0

Drain - Source Voltage VDS (V)

Vth - T

j

VDS = V IDS = 250µA

VGS=4V

GS

20

15

(A)

D

10

5

Drain Current I

0

VGS = 0V

20

(A)

S

10

ID - V

GS

125

C

-55

1.4 2.804.20.7 2.1 3.5

Gate - Source Voltage VGS (V)

IS - V

SD

25

C

1.0

0.9

0.8

0.7

Normalized Threshold Voltage V

0.6

-75 -50 -25

05010025

Junction Temperature Tj ( )

R

DS(ON)

1.6

V

= 10V

GS

= 20A

I

D

1.4

1.2

1.0

0.8

0.6

Normalized On Resistance

0.4

-75 -50 -25 25 50 75 1251000

Junction Temperature Tj ( )

- T

Reverse Drain Current I

1

15012575

Source - Drain Voltage V

0.8 1.41.20.6 1.00.4

(V)

SD

C

C - V

j

1200

1000

800

600

400

Capacitance (pF)

200

0

C

iss

C

oss

C

rss

10

Drain - Source Voltage V

DS

25

(V)

150 5 20 30

2007. 3. 22 4/5

KMB030N30D

Revision No : 1

)

10

VD = 15V

ID = 20A

(V)

8

GS

6

4

2

Gate - Source Voltage V

0

4

2

Qg - V

6

GS

14

10

8

1612

Gate - Charge

1

10

0.5

1

0.2

0.1

0.05

0.02

-1

10

0.01

10

-2

-5

10

Single Pluse

-4

10

-3

Normalized Transient Thermal Resistance

Square Wave Pulse Duration (sec

R

10

Qg (nC)

th

-2

P

DM

1. R

thJA(t)

2. R

= See data sheet

thJA

3. T

JM-TA=PDM*RthJA(t)

4. Duty Cycle, D=t1/t2

-1

10

t

1

t

2

= r(t) *R

1

thJA

1

10

2007. 3. 22 5/5

KMB030N30D

Revision No : 1

Fig. 1 Gate Charge

I

D

0.5 V DSS

1.0 mA

Schottky Diode

V

GS

V

GS

10 V

I

D

V

DS

Q

gs

Q

gd

Q

g

Q

Fig. 2 Resistive Load Switching

0.5 V

DSS

6Ω

10 V

V

GS

V

R

L

V

DS

V

GS

10%

t

d(on)

90%

t

r

t

on

d(off)

t

f

t

off