Datasheet kmb014p30qa Datasheet

2007. 6. 29

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SEMICONDUCTOR

TECHNICAL DATA

KMB014P30QA

P-Ch Trench MOSFET

Revision No : 1

GENERAL DESCRIPTION

This Trench MOSFET has better characteristics, such as fast switching time, low

on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly

suitable for Battery pack.

FEATURES

V

DSS

=-30V, ID=-14A.

Drain-Source ON Resistance.

R

DS(ON)

=12m (Max.) @ VGS=-10V

R

DS(ON)

=18m (Max.) @ VGS=-4.5V

Super High Dense Cell Design

MOSFET Maximum Ratings (Ta=25 Unless otherwise noted)

B2

G

H

B1

1

4

5

8

A

P

D

L

T

FLP-8

0.20+0.1/-0.05T

P

1.27

MILLIMETERSDIM

A

4.85 0.2

+

_

B1

3.94 0.2

+

_

B2

6.02 0.3

+

_

D

0.4 0.1

+

_

G

0.15+0.1/-0.05

H

1.63 0.2

+

_

L

0.65 0.2

+

_

Note : *Surface Mounted on FR4 Board

CHARACTERISTIC SYMBOL PATING UNIT

Drain Source Voltage

V

DSS

-30 V

Gate Source Voltage

V

GSS

20

V

Drain Current

DC

ID*

-14 A

Pulsed

I

DP

-70 A

Drain Source Diode Forward Current

I

S

-1.7 A

Drain Power Dissipation

PD*

2.5

W

Maximum Junction Temperature

T

j

150

Storage Temperature Range

T

stg

-55~150

Thermal Resistance, Junction to Ambient

R

thJA

*

50

/W

PIN CONNECTION (TOP VIEW)

KMB014P 30QA

706

S

G

8

D

7

D

6

D

5

1

2

3

4

1

2

3

4

8

7

6

5

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KMB014P30QA

Revision No : 1

ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage

BV

DSS

IDS=-250 A, VGS=0V

-30 - - V

Drain Cut-off Current

I

DSS

VDS=-24V, VGS=0V

- - -1

A

Gate Leakage Current

I

GSS

VGS= 25V, VDS=0V

- -

100

nA

Gate Threshold Voltage

V

th

VDS=V

GS, ID

=-250 A

-1.4 -1.9 -2.6 V

Drain-Source ON Resistance

R

DS(ON)*

VGS=-10V, ID=-12A

- 8.5 12.0 m

VGS=-4.5V, ID=-10A

- 12 18

On-State Drain Current

I

D(ON)*

VDS=-5V, VGS=-10V

-50 - - A

Forward Transconductance

G

fs*

VDS=-5V, ID=-10A

- 14 - S

Dynamic

Input Capaclitance

C

iss

VDS=15V, VGS=0V, f=1MHz

- 3625 -

pFOuput Capacitance

C

oss

- 980 -

Reverse Transfer Capacitance

C

rss

- 705 -

Total Gate Charge

Q

g*

VDS=-15V, VGS=-10V, ID=-12A

- 65.5 -

nC

VDS=-15V, VGS=-4.5V, ID=-12A

- 32.6 -

Gate-Source Charge

Q

gs*

VDS=-15V, VGS=-10V, ID=-12A

- 10.9 -

Gate-Drain Charge

Q

gd*

- 17.5 -

Turn-On Delay Time

t

d(on)*

VDD=-15V, VGS=-10V

R

L

=12A, RG=3

- 48.5 -

ns

Turn-On Rise Time

t

r*

- 20.3 -

Turn-Off Delay Time

t

d(off)*

- 110.8 -

Turn-Off Fall Time

t

f*

- 52.8 -

Source-Drain Diode Ratings

Source-Drain Forward Voltage

V

SDF*

VGS=0V, IDR=-1.7A,

- -0.73 -1.2 V

Note

1. Pulse Test : Pulse width 10 , Duty cycle 1%

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KMB014P30QA

Revision No : 1

25

20

(A)

D

15

10

Drain Current I

6000

5000

4000

-VGS=10V

5

0

0.5

C

iss

Fig 1. ID - V

-VGS=4V

-VGS=4.5V

1.0 1.5 2.0 2.5 3.0

DS

-VGS=3.5V

-VGS=3V

Drain - Source Voltage VDS (V)

Fig 3. C - V

DS

25

20

(A)

D

15

10

Drain Current I

5

0

1.8

VGS =-10V

= -12A

I

D

1.6

1.4

Fig 2. ID - V

1.2 2.403.60.6 1.8 3.0

125

25

GS

C

Gate - Source Voltage VGS (V)

Fig 4. R

DS(ON)

- T

j

-55

C

3000

2000

C

Capacitance (pF)

1000

oss

C

rss

0

1505 20 30

10

Drain - Source Voltage V

Fig 5. Vth - T

1.3

th

1.2

1.1

1.0

0.9

0.8

0.7

Normalized Threshold Voltage V

0.6

-50 -25

05010025

j

25

(V)

DS

VDS = V IDS = 250µA

1.2

1.0

0.8

Normalized On Resistance

0.6

-55 -25 25 50 75 1251000

Junction Temperature Tj ( )

Fig 6. IDR - V

20

GS

12575

(A)

Reverse Source-Drain Current I

VGS = 0V

DR

10

1

0.2 0.8 1.20.6 1.00.4

C

SD

Junction Temperature Tj ( )

C

Source-Drain Forword Voltage V

SDF

(V)

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KMB014P30QA

Revision No : 1

Fig 7. Qg - V

10

V

= -15V

DS

ID = -12A

(V)

GS

Gate - Source Voltage V

8

6

4

2

0

22

11

Total Gate Charge

0

10

GS

2

10

1

10

(A)

D

0

10

Operation in this area is limited by R

-1

10

Drain Current I

-2

10

-1

33

44

55

8866

77

10

Qg (nC)

Fig8. Safe Operation Area

DS(ON)

VGS= 10V SINGLE PULSE

0

10

Drain - Source Voltage V

10

1ms

10ms

100ms

1s 10s DC

1

2

10

(V)

DS

10

3

Fig9. Transient Thermal Response Curve

Duty Cycle = 0.5

0.2

-1

10

0.1

0.05

0.02

-2

10

-4

10

Single Pluse

-3

10

-2

10

Normalized Transient Thermal Resistance

-1 10

10

0

Square Wave Pulse Duration (sec)

P

DM

t

1

1. Duty Cycle, D =

2. Per Unit Base = R

1

10

t

2

θJA

2

t

1

t

2

= 50 C/W

10

3