Page 1
2008. 9. 26 1/5
SEMICONDUCTOR
TECHNICAL DATA
KMB012N40DA
N-Ch Trench MOSFET
Revision No : 0
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for Back-light Inverter and Power
Supply.
FEATURES
·V
DSS
=40V, ID=12A.
·Low Drain-Source ON Resistance.
: R
DS(ON)
=33mΩ(Max.) @ V
GS
=10V
: R
DS(ON)
=47mΩ(Max.) @ V
GS
=4.5V
·Super High Dense Cell Design.
·High Power and Current Handling Capability.
MAXIMUM RATING (Ta=25℃℃Unless otherwise Noted)
PIN CONNECTION (TOP VIEW)
DPAK (1)
DIM
MILLIMETERS
A
A
B
B
C
C
D
D
F
FF
H
G
K
G
J
L
K
L
M
0.96 MAX
0.90 MAX
E
E
M
N
H
0.70 MIN
O
0.1 MAX
N
123
6.60 0.20+
_
6.10 0.20+
_
5.34 0.30+
_
0.70 0.20+
_
2.70 0.15
+
_
2.30 0.10
+
_
1.80 0.20+
_
0.50 0.10
+
_
2.30 0.10+
_
0.50 0.10
+
_
J
O
1. GATE
2. DRAIN
3. SOURCE
Note 1) R
thJC
means that the infinite heat sink is mounted.
Note 2) Surface Mounted on 1
×1 Pad of 2 oz copper.
CHARACTERISTIC SYMBOL N-Ch UNIT
Drain-Source Voltage
V
DSS
40 V
Gate-Source Voltage
V
GSS
±20
V
Drain Current
DC@T
C
=25℃ (Note1)
I
D
12
A
Pulsed (Note2)
I
DP
30
Drain-Source Diode Forward Current
I
S
30
A
Drain Power Dissipation
@T
C
=25℃ (Note1)
P
D
45
W
@Ta=25
℃ (Note2)
3.1
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Thermal Resistance, Junction to Case (Note1)
R
thJC
2.8
℃/W
Thermal Resistance, Junction to Ambient (Note2)
R
thJA
40
℃/W
D
2
1
GS
3
Marking
KMB
012N40
DA
Type Name
Lot No
2
1
3
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KMB012N40DA
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25℃℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
VGS=0V, I
D
=250μA
40 - - V
Drain Cut-off Current
I
DSS
VGS=0V, VDS=32V
--1
μA
Gate Leakage Current
I
GSS
V
GS
=±20V, V
DS
=0V
--
±100
nA
Gate Threshold Voltage
V
th
VDS=V
GS, ID
=250μA
1-3V
Drain-Source ON Resistance
R
DS(ON)*
VGS=10V, ID=12A
-2533
m
Ω
VGS=4.5V, ID=6A
-3447
Forward Transconductance
g
fs*
VDS=5V, ID=12A
-3-S
Dynamic
Input Capacitance
C
iss
VDS=20V, f=1MHz, VGS=0V
- 432 -
pFOuput Capacitance
C
oss
- 130 -
Reverse Transfer Capacitance
C
rss
-50-
Total Gate Charge
V
GS
=10V Qg*
V
DS
=24V, VGS=10V, ID=12A
- 10.2 -
nC
V
GS
=4.5V Qg*
- 5.5 -
Gate-Source Charge
Q
gs
*
- 2.2 -
Gate-Drain Charge
Q
gd
*
- 2.4 -
Turn-On Delay Time
t
d(on)
*
V
DD
=20V, VGS=10V
ID=12A, R
G
=3Ω
-5-
ns
Turn-On Rise Time
tr*
-6-
Turn-Off Delay Time
t
d(off)
*
-15-
Turn-Off Fall Time
tf*
-5-
Source-Drain Diode Ratings
Source-Drain Forward Voltage
V
SDF
*
V
GS
=0V, IS=1A
- 0.8 1.0
V
Note>* Pulse Test : Pulse width <300
㎲ , Duty cycle < 2%
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KMB012N40DA
Revision No : 0
30
VGS=10V
24
(A)
D
18
12
Drain Current I
6
0
30
VDS=V
24
(A)
D
18
Fig1. I
6.0V
5.0V
D
- V
DS
(mΩ)
4.5V
4.0V
3.5V
Source On Resistance R
0.5011.522.5
Drain
Drain - Source Voltage VDS (V)
Fig3. I
GS
D
- V
GS
DS(ON)
(mΩ)
DS(ON)
75
Ta=25
60
45
30
15
0
0
75
VGS=10V, ID=12A
60
45
Fig2. R
C
VGS=4.5V
VGS=10V
6
12 18 24 30
Drain - Current ID (A)
Fig4. R
DS(ON)-ID
DS(on)
- T
j
12
Drain Current I
6
0
1 1.5
Ta=125
22.533.544.5
Gate Source Volatage VGS (V)
Fig5. V
5
VGS=V
DS
(V)
th
Gate Threshold Voltage V
ID=250µA
4
3
2
1
0
-75 -50 -25 0 50 10075 125 15025
30
25
C
-55
C
- T
th
C
j
15
Source On-Resistance R
0
Drain-
-25 15050 75 100 12525-50 0-75
Junction Temperature Tj ( )
100
(A)
S
10
1
0.1
Reverse Drain Current I
0.01
0.2
0.4
Fig6. IS - V
Ta=125
C
0.6
SDF
0.8
C
Ta=25
C
1
1.2
Junction Temperature Tj ( )
C
Source - Drain Forward Voltage V
SDF
(V)
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KMB012N40DA
Revision No : 0
Fig 7. V
10
V
= 20V
DS
= 12A
I
(V)
GS
Gate - Source Voltage V
D
8
6
4
2
0
0
Gate - Charge
Ciss
Fig 8. C - V
DS
f=1MHz
GS
- Q
g
750
600
450
300
Coss
Capacitance (pF)
150
4
10
814122
0
Qg (nC)
Crss
2010 30 400
Drain - Source Voltage V
DS
(V)
Fig9. Safe Operation Area
2
10
100us
1ms
10ms
DC
(A)
D
1
10
R
Limited
0
10
DS(ON)
-1
10
Drain Current I
-2
10
10
VGS= 10V
SINGLE PULSE
C
= 25
T
C
-1
0
10
Drain - Source Voltage V
Fig10. Transient Thermal Response Curve
1
10
1
D = 0.5
0.2
0.1
-1
10
0.05
0.02
SINGLE
0.01
-2
10
-5
10
Normalized Effective Transient Thermal Resistance
-4
10
-3
10
Square Wave Pulse Duration tw (sec)
1
10
(V)
DS
2
10
P
DM
t
1
t
2
- Duty = t/T
T
- R
=
thJC
-2
10
-1
10
- T
j(max)
c
P
D
110
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2008. 9. 26 5/5
KMB012N40DA
Revision No : 0
Fig11. Gate Charge Circuit and Wave Form
Schottky
1.0 mA
Diode
V
GS
0.5 V
DSS
I
D
V
GS
10 V
I
D
V
DS
Q
gs
Q
gd
Q
g
Q
Fig12. Resistive Load Switching
0.5 V
DSS
6Ω
10 V
V
R
L
V
DS
V
GS
DS
V
GS
10%
t
d(on)
90%
t
t
r
t
on
d(off)
t
f
t
off
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