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SEMICONDUCTOR
TECHNICAL DATA
KMB012N30QA
N-Ch Trench MOSFET
Revision No : 0
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low
on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly
suitable for DC/DC Converter and Battery pack..
FEATURES
·V
DSS
=30V, ID=12A.
·Drain to Source On Resistance.
R
DS(ON)
=7mΩ(Max.) @ V
GS
=10V
R
DS(ON)
=11mΩ(Max.) @ V
GS
=4.5V
MOSFET Maximum Ratings (Ta=25℃ Unless otherwise noted)
FLP-8
0.20+0.1/-0.05
P
T
1.27
U 0.1 MAX
MILLIMETERS
0.4 0.1
0.15+0.1/-0.05
4.85 0.2
B2
G
H
L
D
A
B1
DIM
6.02 0.3
1.63 0.2
0.65 0.2
3.94 0.2
+
_
+
_
+
_
+
_
+
_
+
_
G
H
B1 B2
1
4
5
8
A
P
D
L
T
U
Note1) Surface Mounted on 1″×1″FR4 Board, t≤10sec.
PIN CONNECTION (TOP VIEW)
CHARACTERISTIC SYMBOL RATING UNIT
Drain to Source Voltage
V
DSS
30 V
Gate to Source Voltage
V
GSS
±20
V
Drain Current
DC@Ta=25℃ (Note 1)
I
D
12 A
Pulsed (Note 1)
I
DP
48 A
Drain Power Dissipation
@Ta=25℃ (Note 1)
P
D
2.5
W
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55~150
℃
Thermal Resistance, Junction to Ambient (Note 1)
R
thJA
50
℃/W
KMB012N
30QA
S
1
S
S
G
2
3
4
8
D
7
D
6
D
D
5
1
2
3
4
8
7
6
5
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KMB012N30QA
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25℃) UNLESS OTHERWISE NOTED
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain to Source Breakdown Voltage
BV
DSS
VGS=0V, I
D
=250μA
30 - - V
Drain Cut-off Current
I
DSS
VGS=0V, VDS=30V
- - 1
μA
Gate to Source Leakage Current
I
GSS
V
GS
=±20V, V
DS
=0V
- -
±100
nA
Gate to Source Threshold Voltage
V
th
VDS=V
GS, ID
=250μA
1.0 - 3.0 V
Drain to Source On Resistance
R
DS(ON)
VGS=10V, ID=12A (Note2)
- 6.0 7.0
mΩ
VGS=4.5V, ID=10A (Note2)
- 8.5 11.0
Forward Transconductance
g
fs
VDS=5V, ID=12A (Note2)
- 48 - S
Dynamic
Input Capaclitance
C
iss
VDS=15V, VGS=0V, f=1MHz (Note2)
- 1310 -
pFOuput Capacitance
C
oss
- 420 -
Reverse Transfer Capacitance
C
rss
- 205 -
Total Gate Charge
VGS=10V
Q
g
VDS=15V, VGS=10V, ID=12A (Note2)
- 27.0 -
nC
VGS=4.5V
- 14.5 -
Gate to Source Charge
Q
gs
- 4.8 -
Gate to Drain Charge
Q
gd
- 6.6 -
Turn-On Delay Time
t
d(on)
VDS=15V, VGS=10V
ID=1A, R
G
=6Ω (Note2)
- 7.0 -
ns
Turn-On Rise Time
t
r
- 7.5 -
Turn-Off Delay Time
t
d(off)
- 28.3 -
Turn-Off Fall Time
t
f
- 9.9 -
Source to Drain Diode Ratings
Continuous Source Current
I
S
- - - 1.7
A
Pulsed Source Current
I
SP
- - - 48
Source to Drain Forward Voltage
V
SD
VGS=0V, IS=1.7A (Note2)
- 0.75 1.2 V
Note2) Pulse Test : Pulse Width≤300㎲, Duty Cycle≤2%
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KMB012N30QA
Revision No : 0
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KMB012N30QA
Revision No : 0
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