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SEMICONDUCTOR
TECHNICAL DATA
KMB010P30QA
P-Ch Trench MOSFET
Revision No : 1
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low
on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly
suitable for Battery pack.
FEATURES
V
DSS
=-30V, ID=-10A.
Drain-Source ON Resistance.
R
DS(ON)
=20m (Max.) @ VGS=-10V
R
DS(ON)
=28m (Max.) @ VGS=-4.5V
Super High Dense Cell Design
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted)
Note : *Surface Mounted on FR4 Board
CHARACTERISTIC SYMBOL PATING UNIT
Drain Source Voltage
V
DSS
-30 V
Gate Source Voltage
V
GSS
20
V
Drain Current
DC
ID*
-10 A
Pulsed
I
DP
-50 A
Drain Source Diode Forward Current
I
S
-1.7 A
Drain Power Dissipation
PD*
2.0
W
Maximum Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55~150
Thermal Resistance, Junction to Ambient
R
thJA
*
62.5
/W
PIN CONNECTION (TOP VIEW)
H
P
D
A
8
1
G
5
B2
B1
4
FLP-8
KMB010P
30QA
T
709
A
B1
B2
D
G
H
L
P
L
MILLIMETERSDIM
4.85 0.2
3.94 0.2
6.02 0.3
0.4 0.1
0.15+0.1/-0.05
1.63 0.2
0.65 0.2
0.20+0.1/-0.05T
1.27
_
+
_
+
_
+
_
+
_
+
_
+
S
1
S
2
S
3
G
4
8
D
7
D
6
D
D
5
1
2
3
4
8
7
6
5
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2007. 6. 29
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KMB010P30QA
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
VGS=0V, IDS=-250 A
-30 - - V
Drain Cut-off Current
I
DSS
VDS=-24V, VGS=0V
- - -1
A
Gate Leakage Current
I
GSS
VGS= 25V, VDS=0V
- -
100
nA
Gate Threshold Voltage
V
th
VDS=V
GS, ID
=-250 A
-1.3 -1.9 -2.5 V
Drain-Source ON Resistance
R
DS(ON)*
VGS=-10V, ID=-10A
- 12 20
m
VGS=-4.5V, ID=-8A
- 20 28
On-State Drain Current
I
D(ON)*
VDS=-5V, VGS=-10V
-30 - - A
Forward Transconductance
G
fs*
VDS=-15V, ID=-10A
- 14 - S
Dynamic
Input Capaclitance
C
iss
VDS=-15V, VGS=0V, f=1MHz
- 2530 -
pFOuput Capacitance
C
oss
- 635 -
Reverse Transfer Capacitance
C
rss
- 445 -
Total Gate Charge
Q
g*
VDS=-15V, VGS=-10V, ID=-10A
- 44.6 -
nCGate-Source Charge
Q
gs*
- 7.7 -
Gate-Drain Charge
Q
gd*
- 11.5 -
Turn-On Delay Time
t
d(on)*
VDD=-15V, VGS=-10V
R
L
=1.25 , RG=6
- 10.2 -
ns
Turn-On Rise Time
t
r*
- 6.3 -
Turn-Off Delay Time
t
d(off)*
- 22.5 -
Turn-Off Fall Time
t
f*
- 10.6 -
Source-Drain Diode Ratings
Source-Drain Forward Voltage
V
SDF*
VGS=0V, IDR=-1.7A,
- -0.73 -1.2 V
Note
1. Pulse Test : Pulse width 10 , Duty cycle 1%
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KMB010P30QA
Revision No : 1
25
VGS=10,9,8,7,6,5,4V
20
(A)
D
15
10
Drain Current I
5
0
0
4200
3500
2800
Fig1. ID - V
2
468 1210
DS
VGS=3.0V
Drain - Source Voltage VDS (V)
Fig3. C - V
DS
Ciss
25
20
(A)
D
15
10
Drain Current I
5
0
0
1.8
VGS=-20V
I
=-10A
D
1.6
(Ohms)
1.4
0.5
Fig2. ID - V
11.52 32.5
125
GS
C
Gate - Source Voltage VGS (V)
Fig4. R
DS(ON)
- T
j
25
-55
C
C
2100
1400
Capacitance (pF)
700
0
0
510 20 3015 25
Drain-Source Volatage VDS (V)
Fig5. Vth - T
1.3
VGS=V
DS
ID=-250µA
1.2
1.1
th
1.0
0.9
Voltage V
0.8
0.7
0.6
Normalized Gate Source Threshold
-50 -25 25 50 12575 1000
DS(ON)
1.2
1.0
Coss
Crss
j
0.8
On-Resistance R
0.6
012575 10050-25 25-55
Junction Temperature Tj ( )
Fig 6. IDR - V
20
(A)
DR
Reverse Source-Drain Current I
VGS=0V
10
1
0.60.4
C
SDF
0.90.7 1.31.1
Junction Temperature Tj ( )
C
Source-Drain Forword Voltage V
SDF
(V)
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2007. 6. 29
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KMB010P30QA
Revision No : 1
Fig7. VGS - Q
10
8
6
4
2
0
VDS=-15V
ID=-10A
10
1680
Total Gate Charge Q
0
(V)
GS
Gate to Source Voltage V
g
(A)
D
Drain Current I
4832 644024 56
(nC)
g
Fig9. Transient Thermal Response Curve
2
10
1
10
0
10
Operation in this
area is limited by R
-1
10
VGS= 10V
SINGLE PULSE
-2
10
-1
10
Fig8. Safe Operation Area
1ms
10ms
100ms
DS(ON)
0
10
10
Drain - Source Voltage V
1s
10s
DC
1
DS
2
10
(V)
3
10
Duty Cycle = 0.5
0.2
-1
10
0.1
0.05
0.02
-2
10
-4
10
Single Pluse
-3
10
-2
10
Normalized Transient Thermal Resistance
-1 10
10
0
Square Wave Pulse Duration (sec)
P
DM
t
1
1. Duty Cycle, D =
2. Per Unit Base = R
1
10
10
t
2
t
t
θJA
2
1
2
= 62.5 C/W
3
10
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