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SEMICONDUCTOR
TECHNICAL DATA
KMA4D5P20X
P-CH Trench MOSFET
Revision No : 2
General Description
It s mainly suitable for battery pack or power management in cell phone,
and PDA.
FEATURES
·V
DSS
=-20V, ID=-4.5A.
·Drain-Source ON Resistance.
: R
DS(ON)
=60mΩ(Max.) @ V
GS
=-4.5V,.ID=-4.5A
: R
DS(ON)
=110mΩ(Max.) @ V
GS
=-2.5V,.ID=-3.3A
·Super High Dense Cell Design for Extremely Low R
DS(ON)
MAXIMUM RATING (Ta=25℃)
* : Surface Mounted on 1”×1”FR4 Board, t≤5sec.
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±12
V
Drain Current
DC
ID *
±4.5
A
Pulsed
I
DP
*
±16
Continuous Source Current
I
S
-1.3
A
Drain Power Dissipation
Ta=25
℃
PD *
2.0
W
Ta=70
℃
1.3
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Thermal Resistance, Junction to Ambient
R
thJA
*
62.5
℃/W
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KMA4D5P20X
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Note 1) Based on thermal dissipation from junction to ambient while mounted on a 1”×1”FR4 Board.
Note 2) Pulse test : Pulse width
≤300㎲, Duty Cycle≤2%
Note 3) Guaranteed by design, not subject to production testing.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=-250μA, V
GS
=0V
-20 - - V
Drain Cut-off Current
I
DSS
VGS=0V, VDS=-20V
---1
μA
V
GS
=0V,V
DS
=-16V, Tj=70℃ (Note
---5
Gate Threshold Voltage
V
th
VDS=VGS, I
D
=-250μA
-0.6 - -1.3 V
Gate Leakage Current
I
GSS
V
GS
=±12V, V
DS
=0V
--
±100
nA
Drain-Source ON Resistance
R
DS(ON)
VGS=-4.5V, ID=-4.5A (Note 2)
-4960
m
Ω
VGS=-2.5V, ID=-3.3A (Note 2)
- 85 110
Forward Transconductance
g
fs
VDS=-5V, ID=-4.5A (Note 2)
-7-S
Dynamic
(Note 3)
Total Gate Charge
Q
g
VDS=-10V, R
D
=2.2Ω
VGS=-4.5V
(Fig.1)
- 8.5 -
nCGate-Source Charge
Q
gs
- 1.8 -
Gate-Drain Charge
Q
gd
- 2.9 -
Turn-on Delay time
t
d(on)
VDS=-10V, R
D
=2.2Ω
VGS=-4.5V R
G
=6Ω
(Fig.2)
-12-
ns
Turn-on Rise time
t
r
-32-
Turn-off Delay time
t
d(off)
-64-
Turn-off Fall time
t
f
-40-
Source-Drain Diode Ratings
Continuous Source Current
I
S
VGS< V
th
(Note 1)
- - -1.3 A
Diode Forward Voltage
V
SD
IS=-4.5A, VGS=0V (Note 2)
- - -1.3 V
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KMA4D5P20X
Revision No : 2
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KMA4D5P20X
Revision No : 2
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KMA4D5P20X
Revision No : 2
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