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2007. 4. 17 1/5
SEMICONDUCTOR
TECHNICAL DATA
KMA3D0N20SA
N-Ch Trench MOSFET
Revision No : 0
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment.
FEATURES
V
DSS
=20V, ID=3A
Drain-Source ON Resistance
R
DS(ON)
=60m (Max.) @ VGS=4.5V
R
DS(ON)
=120m (Max.) @ VGS=2.5V
Super Hige Dense Cell Design
MAXIMUM RATING (Ta=25 )
Note : Surface Mounted on FR4 Board, t 10sec.
PIN CONNECTION (TOP VIEW)
CHARACTERISTIC SYMBOL N-Ch UNIT
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
12
V
Drain Current
DC
I
D
3
A
Pulsed
I
DP
12
Drain-Source-Diode Forward Current
I
S
1.25 A
Drain Power Dissipation
TA=25
P
D
1.25
W
TA=70
0.8
Maximum Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Thermal Resistance, Junction to Ambient
R
thJA
100
/W
E
B
LL
DIM MILLIMETERS
A
B
C
A
G
2
H
1
PP
N
C
M
K
D
3
D
E
G1.90
H
J
K
L
M
N
P7
J
_
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
SOT-23
KNB
D
3
3
2
1
2
1
GS
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2007. 4. 17 2/5
KMA3D0N20SA
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
IDS=250 A, VGS=0V,
20 - - V
Drain Cut-off Current
I
DSS
VGS=0V, VDS=16V
- - 1
A
Gate Leakage Current
I
GSS
VGS= 10V, VDS=0V
- -
100
nA
Gate Threshold Voltage
V
th
VDS=V
GS, ID
=250 A
0.5 0.8 1.5 V
Drain-Source ON Resistance
R
DS(ON)
*
VGS=4.5V, ID=2.5A
- 50 60
m
VGS=2.5V, ID=1A
- 90 120
On-State Drain Current
I
D(ON)
* VGS=4.5V, VDS=5V
8 - - A
Forward Transconductance
gfs* VDS=5V, ID=2.5A
- 6 - S
Dynamic
Input Capaclitance
C
iss
VDS=10V, VGS= 0V, f=1MHz,
- 330 -
pFOuput Capacitance
C
oss
- 110 -
Reverse Transfer Capacitance
C
rss
- 60 -
Total Gate Charge
Qg*
VDS=10V, VGS=4.5V, ID=2.5A
- 4.7 -
nCGate-Source Charge
Qgs*
- 1.6 -
Gate-Drain Charge
Qgd*
- 1.3 -
Turn-On Delay Time
t
d(on)
*
VDD=10V, VGS=4.5V
I
D
=1A, RG=6
(NOTE 1)
- 9.2 -
ns
Turn-On Rise Time
tr*
- 6.8 -
Turn-Off Delay Time
t
d(off)
*
- 6.1 -
Turn-Off Fall Time
tf*
- 8.3 -
Source-Drain Diode Ratings
Source-Drain Forward Voltage
V
SDF
* VGS=0V, IDR=1.25A
- 0.81 1.2 V
NOTE 1> * : Pulse Test : Pulse width <300 , Duty cycle < 2%
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KMA3D0N20SA
Revision No : 0
(A)
D
12
10V,3V,2.8V,2.6V
8
4
Drain Current I
0
0
12
Common Source
=5V
V
DS
Pulse Test
(A)
D
8
4
Drain Current I
0
01
Fig1. I
D - VDS
Common Source
Tc=25
Pulse Test
2.4V
2.2V
VGS=2.0V
2
46810
Drain - Source Voltage VDS (V)
125
Fig3. I
25
C
C
V
D -
GS
-55
C
2345
Fig2. R
200
DS(ON)
100
Common Source
C
Tc=25
Pulse Test
C
(mΩ)
DS(on)
- I
D
VGS=4.5V
VGS=10V
Source On Resistance R
Drain
0
0
4
81216
Drain - Current ID (A)
80
Common Source
=4.5V, ID=2.5A
V
GS
Pulse Test
(mΩ)
60
Source
DS(ON)
40
20
Normalized Drain-
On-Resistance R
0
Fig4. R
-25 15050 75 100 12525-50 0-75
DS(on)
- T
j
Gate Source Volatage VGS (V)
Fig5. V
5
Common Source
V
(V)
th
Gate Threshold Voltage V
GS=VDS
I
=250µA
D
4
Pulse Test
3
2
1
0
-75 -50 -25 0 50 10075 125 15025
Junction Temperature Tj ( )
th
- T
Junction Temperature Tj ( )
j
10
8
(A)
D
6
4
Drain Current I
2
0
C
Source - Drain Forward Voltage V
Fig6. I
- V
S
0.8 1.200.4 1.62.0
SDF
Common Source
Tc= 25
Pulse Test
C
C
(V)
SDF
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2007. 4. 17 4/5
KMA3D0N20SA
Revision No : 0
1
Fig7. Transient Thermal Response Curve
0.1
THERMAL RESISTANCE
NORMALIZED TRANSIENT
0.01
-4
10
-3
10
-2
10
10
R
DS(ON)
(A)
D
1
0.1
Drain Current I
0.03
VGS= 4.5V
SINGLE PULSE
= 25
T
A
-1
10
10
0
TIME t (sec)
Fig8. Safe Operation Area
LIMIT
C
10.1 5010 20
10 ms
100 ms
1s
DC
P
DM
- Duty = t/T
10 10
t
1
t
2
2
3
10
Drain - Source Voltage V
(V)
DS
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2007. 4. 17 5/5
KMA3D0N20SA
Revision No : 0
Fig9. Gate Charge Circuit and Wave Form
Schottky
1.0 mA
Diode
V
GS
0.5 V
DSS
I
D
V
GS
10 V
I
D
V
DS
Q
gs
Q
gd
Q
g
Q
Fig10. Resistive Load Switching
0.5 V
DSS
6Ω
10 V
V
R
L
V
DS
V
GS
DS
V
GS
10%
t
d(on)
90%
t
t
r
t
on
d(off)
t
f
t
off
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