Page 1
2007. 3. 22 1/5
SEMICONDUCTOR
TECHNICAL DATA
KMA2D8P20X
P-CH Trench MOSFET
Revision No : 1
General Description
It’s mainly suitable for battery pack or power management in cell phone,
and PDA.
FEATURES
·V
DSS
=-20V, ID=-2.8A.
·Drain-Source ON Resistance.
: R
DS(ON)
=90mΩ(Max.) @ VGS=-4.5V
: R
DS(ON)
=150mΩ(Max.) @ VGS=-2.5V
·Super High Dense Cell Design for Extremely Low R
DS(ON)
MAXIMUM RATING (Ta=25℃)
* : Surface Mounted on 1”×1”FR4 Board, t≤5sec.
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±12
V
Drain Current
DC
ID *
-2.8
A
Pulsed
I
DP
-11
Source-Drain Diode Current
IS*
-1.25
A
Drain Power Dissipation
Ta=25℃
PD *
1.25 W
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Thermal Resistance, Junction to Ambient
R
thJA
*
100
℃/W
D
E
A
F
6
1
G
4
BC
3
TSOP-6
H
DIM MILLIMETERS
A
B
C
D
E
F
G
H
J
_
3.00 0.15
+
_
1.65 0.1
+
_
+
2.85 0.2
1.0+0.15/-0.1
0~0.15
0.95 TYP
_
0.45 0.1
+
_
0.15 0.05
+
MIN 0.21
J
PIN CONNECTION (TOP VIEW)
DDDD
1
D
2
D
3
G
6
D
5
D
4
S
G
S
Page 2
2007. 3. 22 2/5
KMA2D8P20X
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Note 1) Pulse test : Pulse width≤300㎲, Duty Cycle≤2%.
Note 2) Guaranteed by design, not subject to production testing.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
ID=-250μA, VGS=0V
-20 - - V
Drain Cut-off Current
I
DSS
VGS=0V, VDS=-16V
- - -1
μA
Gate Leakage Current
I
GSS
VGS=±12V, VDS=0V
- -
±100
nA
Gate Threshold Voltage
V
th
VDS=VGS, ID=-250μA (Note 1)
-0.5 -0.8 -1.5 V
Drain-Source ON Resistance
R
DS(ON)
VGS=-4.5V, ID=-2.5A (Note 1)
- 75 90
mΩ
VGS=-2.5V, ID=-1.0A (Note 1)
- 125 150
On-State Drain Current
I
D(ON)
VGS=-4.5V, VDS=-5V (Note 1)
-7 - - A
Forward Transconductance
g
fs
VDS=-5V, ID=-2.5A (Note 1)
- 6 - S
Diode Forward Voltage
V
SD
VGS=0V, IS=-1.25A (Note 1)
- -0.81 -1.2 V
Dynamic
(Note 3)
Total Gate Charge
Q
g
VDS=-10V, ID=-2.5A
V
GS
=-4.5V (Fig.1)
- 3.6 nCGate-Source Charge
Q
gs
- 0.9 -
Gate-Drain Charge
Q
gd
- 0.8 -
Turn-on Delay time
t
d(on)
VDS=-10V, ID=1A
VGS=-4.5V RG=6Ω (Fig.2)
- 7.5 -
ns
Turn-on Rise time
t
r
- 10.9 -
Turn-off Delay time
t
d(off)
- 27.3 -
Turn-off Fall time
t
f
- 22.5 -
Input Capacitance
C
iss
VDS=-20V, VGS=0V f = 1.0MHz
- 380 -
pF
Output Capacitance
C
oss
- 100 -
Reverse Trancefer Capacitance
C
rss
- 60 -
Page 3
2007. 3. 22 3/5
KMA2D8P20X
Revision No : 1
-
20
-1
6
(A)
D
-1
2
-
8
Drain Current I
-
4
0
0
1.3
th
1.2
1.1
ID - V
DS
-10
-
4.5V
-0.5
V
-
1
-
4V
-
1.5
Drain - Source Voltage V
Vth - T
ID - V
GS
-1
5
-
3V
-
V
=
2V
GS
2.5
-
3
-
-
2
(V)
DS
-1
2
(A)
D
-
9
-
6
Drain Current I
-
3
0
0
-
0.6
Gate - Source Voltage VGS (V)
j
-
(A)
S
20
-
10
ID=
V
DS
-
250µA
= V
GS
-
1.2
Tj=25
Tj = -55
-
1.8
IS - V
C
C
SD
Tj=125
C
-
-
-
2.4
3.0
3.6
1.0
0.9
0.8
0.7
Normalized Threshold Voltage V
0.6
-75 -50-
25
05025 10075 125
Junction Temperature Tj ( )
R
DS(ON)
2.2
VGS = -4.5V
I
=-2.3A
DS
1.8
1.4
1.0
0.6
0.2
Normalized On Resistance
0
-75 -50
-25
25
0
- T
Reverse Drain Current I
-
1
0
C
-
0.6
-
0.8
Source - Drain Voltage V
j
1000
C - V
DS
-
1.0
SD
Frequency = 1MHz
(V)
Tj=25
C
-
1.2
-
1.4
800
600
C
iss
400
Capacitance (pF)
50
75
100
125
200
C
oss
C
rss
0
-
5
0
-
-
-
10
15
20
-
-
25
30
Junction Temperture Tj ( )
C
Drain - Source Voltage V
DS
(V)
Page 4
2007. 3. 22 4/5
KMA2D8P20X
Revision No : 1
-
5
V
= -10V
DS
I
= -2.5A
D
-
4
(V)
GS
-
3
-
2
-
1
Gate - Source Voltage V
0
Qg - V
GS
431203.51.5 2.50.5
Gate - Charge
1
-1
10
0.5
0.2
-2
10
0.1
0.05
0.02
Single Pluse
Normalized Transient Thermal Resistance
0.01
-3
10
-5
10
-4
10
-3
10
10
Square Wave Pulse Duration (sec)
Qg (nC)
R
th
P
DM
- Duty Factor, D= t1/t
- R
-2
-1
10
110
10
thJC
1
t
1
t
2
T
j(max)
=
10
2
- T
c
P
D
2
3
Page 5
2007. 3. 22 5/5
KMA2D8P20X
Revision No : 1
Fig. 1 Gate Charge
I
0.5 V
DSS
V
GS
-
4.5 V
Schottky
1.0 mA
Diode
V
GS
I
D
V
DS
Q
gs
Q
gd
Q
g
Q
D
Fig. 2 Resistive Load Switching
0.5 V
DSS
6Ω
-4.5
V
t
R
L
V
DS
V
GS
t
d(on)
V
GS
10%
DS
90%
V
on
t
r
t
d(off)
t
off
t
f
Loading...