Datasheet kma2d7dp20x Datasheet

Page 1
2005. 11. 23 1/5
SEMICONDUCTOR
TECHNICAL DATA
KMA2D7DP20X
Dual P-CH Trench MOSFET
Revision No : 0
General Description
battery powered applications.
FEATURES
V
DSS
=-20V, ID=-2.7A.
Drain-Source ON Resistance.
: R
DS(ON)
=100m (Max.) @ VGS=-4.5V.
: R
DS(ON)
=175m (Max.) @ VGS=-2.5V.
MAXIMUM RATING (Ta=25 )
* : Surface Mounted on 1 1 Board, t 300 sec.
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
12
V
Drain Current
DC
ID *
-2.7 A
Pulsed
IDP*
-8
Drain Power Dissipation
Ta=25
PD *
2.1 W
Ta=100
0.85
Maximum Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Thermal Resistance, Junction to Ambient
R
thJA
*
59
/W
A
G
6
1
4
3
E
D2
C
F1
BB1
DIM MILLIMETERS
3.05 0.1
A
2.85 0.15
B
1.65 0.1
B1
0.15 0.05
C
1.0 0.1
D
D1
DD1
0.95 0.05
D2
0.1 MAX
0.45MAX
E
0.6 MAX
F
F1
0.60 Ref.
G
F
_ +
_ +
_ +
_ +
_ +
_ +
1.0
TSOP-6
PIN CONNECTION (TOP VIEW)
G
S
G
1
1
2
2
3
2
6
5
4
D
S
D
S
1
1
G
1
1
2
D
1
G
2
S
2
D
2
Page 2
2005. 11. 23 2/5
KMA2D7DP20X
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note 1) Based on thermal dissipation from junction to ambient while mounted on a 1 1 PCB Board.
Note 2) Pulse test : Pulse width
300 .
Note 3) Guaranteed by design, not subject to production testing.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
ID=-250 A, VGS=0V
-20 - - V
Drain Cut-off Current
I
DSS
VDS=-20V, VGS=0V
- - -1 A
VDS=-16V, VGS=0V, Tj=70 (Note 3)
- - -5
Gate Threshold Voltage
V
th
VDS=VGS, ID=-250 A
-0.6 - - V
Gate Leakage Current
I
GSS
VGS= 12V, VDS=0V
- -
100
nA
Drain-Source ON Resistance
R
DS(ON)
VGS=-4.5V, ID=-2.7A (Note 2)
- 80 100
m
VGS=-2.5V, ID=-2.0A (Note 2)
- 140 175
On-State Drain Current
I
D(ON)
VGS=-4.5V, VDS=-5V (Note 2)
-8 - - A
Forward Transconductance
g
fs
VDS=-5V, ID=-2.7A (Note 2)
- 4 - S
Dynamic
(Note 3)
Total Gate Charge
Q
g
VDS=-10V, RL=3.7
VGS=-4.5V
(Fig.1)
- 5.9 -
nCGate-Source Charge
Q
gs
- 1 -
Gate-Drain Charge
Q
gd
- 2 -
Turn-on Delay time
t
d(on)
VDS=-10V, RL=3.7
VGS=-4.5V RG=6
(Fig.2)
- 22 -
ns
Turn-on Rise time
t
r
- 10 -
Turn-off Delay time
t
d(off)
- 20 -
Turn-off Fall time
t
f
- 40 -
Source-Drain Diode Ratings
Continuous Source Current
I
S
VGS< V
th
(Note 1)
- - -0.6 A
Diode Forward Voltage
V
SD
IS=-2.7A, VGS=0V (Note 2)
- - -1.3 V
Page 3
2005. 11. 23 3/5
KMA2D7DP20X
Revision No : 0
-
-
8
8
-
5V
-
4.5V
-
4V
-
-
6
6
(A)
D
Drain Current I
-
3.5V
-
-
4
4
-
-
2
2
0
0
0
0.4
th
ID= -250µA
0.3
0.2
0.1
0
-
0.1
ID - V
-
3V
-
0.5
-
-
1.5
1
Drain - Source Voltage V
Vth - T
DS
ID - V
GS
-
8
Tj=25
C
Tj= -55
(A)
-
6
-
2.5V
-
2V
V
= -1.5
V
GS
D
-
4
-
2
Drain Current I
C
Tj=125
C
0
2.5
(V)
-
3
0
-
1
-
2
-
3
-
4
-
5
Gate - Source Voltage VGS (V)
R
0.3
0.25
(mΩ)
Ta = 25
C
DS(ON)
- I
D
-
-
2
DS
j
0.2
DS(ON)
0.15
0.1
VGS = -2.5V
VGS = -4.5V
-
0.2
-
0.3
Normalized Threshold Voltage V
-75-50-
25
05025 100 15075 125
Junction Temperature Tj ( )
IS - V
-
100
(A)
S
-
10
-
1
150
Tj=
C
Reverse Drain Current I
-
0.1
-
-
0.2
0
Source - Drain Voltage V
-
-
0.4
0.6
SD
-
0.8
Tj=25
SD
(V)
0.05
On - Resistance R
0
0
C
1.6
VGS = -4.5V
1.5
I
DS
1.4
1.3
1.2
1.1
1.0
0.9
C
-
-
1.2
1
0.8
Normalized On Resistance
0.7
0.6
-75-50-
-
2
Drain Current ID (A)
R
DS(ON)
= -2.7A
0
25
Junction Temperture Tj ( )
-
4
- T
-
6
j
5025 100 15075 125
C
-
8
Page 4
2005. 11. 23 4/5
KMA2D7DP20X
Revision No : 0
600
400
200
Capacitance (pF)
0
0
Qg - V
C - V
DS
-
5
-
4
VDS = -10A
= -2.7A
I
DS
Frequency = 1MHz
(V)
GS
C
iss
C
oss
C
rss
-
5
-
10
-
15
-
20
-
3
-
2
-
1
Gate - Source Voltage V
0
1
23 60
GS
5
4
Drain - Source Voltage V
DS
(V)
10
1
Duty=0.5
0.2
0.
1
0.1
0.02
0.01
Normalized Transient Thermal Resistance
0.01
-4
10
Single Pulse
-3
10
-2
10
Gate - Charge
R
th
P
DM
- Duty Factor, D= t1/t
- R
-1
10
1
10
thJA
t
1
t
2
T
- T
j(max)
=
P
D
2
10
Qg (nC)
2
a
3
10
Square Wave Pulse Duration (sec)
Page 5
2005. 11. 23 5/5
KMA2D7DP20X
Revision No : 0
Fig. 1 Gate Charge
I
D
0.5 V
DSS
1.0 mA
Schottky Diode
V
GS
V
GS
-
4.5 V
I
D
V
DS
Q
gs
Q
gd
Q
g
Q
Fig. 2 Resistive Load Switching
0.5 V
DSS
6Ω
-
4.5 V
V
GS
t
R
L
V
DS
t
d(on)
V
GS
10%
DS
90%
V
on
t
r
t
d(off)
t
off
t
f
Loading...