Datasheet kma2d4p20sa Datasheet

2008. 6. 10 1/5

SEMICONDUCTOR

TECHNICAL DATA

KMA2D4P20SA

P-Ch Trench MOSFET

Revision No : 0

General Description

It’s mainly suitable for use as a load switch in battery powered applications.

FEATURES

V

DSS

=-20V, ID=-2.4A.

Drain-Source ON Resistance.

: R

DS(ON)

=100m (Max.) @ VGS=-4.5V.

: R

DS(ON)

=175m (Max.) @ VGS=-2.5V.

MAXIMUM RATING (Ta=25 )

DIM MILLIMETERS

SOT-23

A

B

C

D

E

G

H

J

K

M

N

0.00 ~ 0.10

M

J

K

E

1

2

3

H

G

A

N

C

B

D

1.25 MAX

2.926 0.05

+

_

2.80 0.15+

_

1.90 0.10

+

_

0.95 0.05+

_

0.15 0.05+

_

0.45 0.08+

_

1.10 0.05+

_

1.626 0.05

+

_

0.40 0.05+

_

CHARACTERISTIC SYMBOL RATING UNIT

Drain-Source Voltage

V

DSS

-20 V

Gate-Source Voltage

V

GSS

12

V

Drain Current

DC@Ta=25

ID *

-2.4 A

Pulsed

IDP*

-9

Source-Drain Diode Current

IS *

-0.9

A

Drain Power Dissipation

Ta=25

PD *

1.25 W

Ta=100

0.6

Maximum Junction Temperature

T

j

150

Storage Temperature Range

T

stg

-55 150

Thermal Resistance, Junction to Ambient

R

thJA

*

100

/W

* : Surface Mounted on 1 1 FR4 Board, t 5sec.

PIN CONNECTION (TOP VIEW)

D

3

2

GS

1

Marking

Type Name

Lot No.

KB2

3

2

1

2008. 6. 10 2/5

KMA2D4P20SA

Revision No : 0

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage

BV

DSS

VGS=0V, ID=-250 A

-20 - - V

Drain Cut-off Current

I

DSS

VGS=0V, VDS=-20V

- - -1 A

VGS=0V, VDS=-16V, Tj=70

- - -5

Gate Leakage Current

I

GSS

VGS= 12V, VDS=0V

- -

100

nA

Gate Threshold Voltage

Vth*

VDS=V

GS, ID

=-250 A

-0.6 - - V

Drain-Source ON Resistance

R

DS(ON)

*

VGS=-4.5V, ID=-2.4A

- 83 100

m

VGS=-2.5V, ID=-1.8A

- 145 175

ON State Drain Current

I

D(ON)

VGS=-4.5V, VDS=-5V

-9 - - A

Forward Transconductance

gfs* VDS=-5V, ID=-2.4A

- 4 - S

Dynamic

Input Capacitance

C

iss

VDS=-15V, f=1MHz VGS=0V

- 292 -

pFOutput Capacitance

C

oss

- 60 -

Reverse Transfer Capacitance

C

rss

- 33 -

Total Gate Charge

Qg*

VDS=-15V, RD=5.6 VGS=-4.5V

- 4 -

nC

Gate-Source Charge

Qgs*

- 0.6 -

Gate-Drain Charge

Qgd*

- 1.4 -

Turn-on Delay time

t

d(on)

*

VDD=-15V, VGS=-4.5V , I

D

=-2.4A, RG=6

- 6.5 -

ns

Turn-on Rise time

tr*

- 13 -

Turn-off Delay time

t

d(off)

*

- 15 -

Turn-off Fall time

tf*

- 20 -

Source-Drain Diode Ratings

Source-Drain Forward Voltage

V

SDF

* VGS=0V, IS=-2.4A

- - -1.3 V

Note>* Pulse Test : Pulse width <300 , Duty cycle < 2%

2008. 6. 10 3/5

KMA2D4P20SA

Revision No : 0

-10

-

8

(A)

D

Drain Current I

-4.5V

-

6

-

4

-

2

0

-10

= V

V

DS

-

8

(A)

D

-

6

-

4

Fig1. ID - V

-4V

-3.5V

-3V

-

1

Drain - Source Voltage V

Fig3. ID - V

GS

Tj=25

C

= -55

Tj

C

DS

GS

-

2

DS

Tj=125

VGS = -1.5

(V)

C

-

2.5V

Fig2. R

DS(ON)

- I

D

300

C

(mΩ)

Ta=25

250

DS(ON)

200

150

-

2V

V

-

3

100

50

Source On Resistance R

0

Drain

VGS = -2.5V

VGS = -4.5V

0

-2

-

4

-6

-

8

Drain Current ID (A)

200

(mΩ)

160

DS(ON)

120

80

VGS = -4.5V

2.4Α

I

= -

D

Fig4. R

DS(ON)

- T

j

Drain Current I

-

2

0

-

1

Gate - Source Voltage VGS (V)

-2.0

VGS = V

DS

250µ

(V)

th

ID = -

-1.6

-1.2

-0.8

-0.4

Threshold Voltage V

0

-75 -50-

25

Junction Temperature Tj ( )

-

2

Fig5. Vth - T

A

-

3

j

05025 100 15075 125

40

Source On-Resistance R

-

4

-

5

C

0

Drain-

-75 -50

-25

Junction Temperture Tj ( )

10

(A)

S

1

0.1

Reverse Drain Current I

0.01

0.4

Ta=125

0.6

Source - Drain Forward Voltage V

50

25

0

Fig6. IS - V

C

0.8

SDF

Ta=25

75

100

150125

C

1

SDF

(V)

1.2

2008. 6. 10 4/5

KMA2D4P20SA

Revision No : 0

-

5

VD = -15V I

= -2.4A

D

-

4

(V)

GS

-

3

-

2

-

1

Gate - Source Voltage V

0

Gate - Charge

Fig7. Qg - V

Qg (nC)

GS

431205

2

10

1

10

(A)

D

R

DS(ON)

0

10

-1

10

Drain Current I

-2

10

-2

10

VGS= 10V SINGLE PULSE

a

= 25 C

T

Fig9. Safe Operation Area

Limited

10

-1

0

10

600

450

C

300

Capacitance (pF)

150

0

C

rss

0

200µs

1ms

10ms

100ms

1s

10s

DC

1

10

Fig8. C - V

DS

iss

oss

5

10

Drain - Source Voltage V

2

10

15

DS

f = 1MHz

(V)

20

Drain - Source Voltage V

Fig10. Transient Thermal Response Curve

1

10

0

10

Duty Cycle = 0.5

0.2

0.1

0.05

-1

10

0.02

-2

10

Single Pulse

Normalized Effective Transient Thermal Resistance

-3

10

-4

10

-3

10

-2

10

Square Wave Pulse Duration tw (sec)

-1 10

10

(V)

DS

P

DM

t

1

t

2

1. Duty Cycle D = t1/t

2. Per unit Base = R

0

1

10

2

=110 C/W

thJA

2

10

3

2008. 6. 10 5/5

KMA2D4P20SA

Revision No : 0

Fig. 1 Gate Charge

I

D

0.5 V

DSS

1.0 mA

Schottky Diode

V

GS

V

GS

-

4.5 V

I

D

V

DS

Q

gs

Q

gd

Q

g

Q

Fig. 2 Resistive Load Switching

0.5 V

DSS

6Ω

-

4.5 V

V

GS

t

R

L

V

DS

t

d(on)

V

GS

10%

DS

90%

V

on

t

r

t

d(off)

t

off

t

f