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2005. 11. 23 1/5
SEMICONDUCTOR
TECHNICAL DATA
KMA2D0DP20X
Dual P-CH Trench MOSFET
Revision No : 0
General Description
It’s mainly suitable for use as a load switch in battery powered
applications.
FEATURES
V
DSS
=-20V, ID=-2.0A.
Drain-Source ON Resistance.
: R
DS(ON)
=130m (Max.) @ VGS=-4.5V.
: R
DS(ON)
=190m (Max.) @ VGS=-2.5V.
MAXIMUM RATING (Ta=25 )
* : Surface Mounted on 1 1 Board, t 10 sec.
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
10
V
Drain Current
DC
ID *
-2
A
Pulsed
IDP*
-7
Source-Drain Diode Current
IS*
-1.25
A
Drain Power Dissipation
Ta=25
PD *
1 W
Maximum Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Thermal Resistance, Junction to Ambient
R
thJA
*
59
/W
A
F
6
1
G
4
3
D2
C
BB1
DD1
TSOP-6
DIM MILLIMETERS
A
B
B1
C
D
D1
D2
E
F
G
_
2.926 0.05+
_
2.80 0.15+
+_1.626 0.05
+_0.15 0.05
1.25 MAX
_
1.10 0.05+
0~0.10
_
0.45 0.08+
_
0.95 0.05+
_
+
0.40 0.05
E
PIN CONNECTION (TOP VIEW)
G
S
G
1
1
2
2
3
2
6
D
1
G
S
5
1
D
4
2
1
S
1
G
2
D
1
S
2
D
2
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2005. 11. 23 2/5
KMA2D0DP20X
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note 1) Pulse test : Pulse width 300 , Duty Cycle 2%
Note 2) Guaranteed by design, not subject to production testing.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
ID=-250 A, VGS=0V
-20 - - V
Drain Cut-off Current
I
DSS
VGS=0V, VDS=-16V
- - -1
A
Gate Leakage Current
I
GSS
VGS= 10V, VDS=0V
- -
100
nA
Gate Threshold Voltage
V
th
VDS=VGS, ID=-250 A
-0.5 -0.8 -1.5 V
Drain-Source ON Resistance
R
DS(ON)
VGS=-4.5V, ID=-2.0A (Note 2)
- 115 130
m
VGS=-2.5V, ID=-1.0A (Note 2)
- 175 190
On-State Drain Current
I
D(ON)
VGS=-4.5V, VDS=-5V (Note 2)
-5 - - A
Forward Transconductance
g
fs
VDS=-5V, ID=-2A (Note 2)
- 6 - S
Diode Forward Voltage
V
SD
VGS=0V, IS=-1.25A (Note 2)
- -0.85 -1.2 V
Dynamic
(Note 3)
Total Gate Charge
Q
g
VDS=-10V, ID=-2A
V
GS
=-4.5V
(Fig.1)
- 3.5 -
nCGate-Source Charge
Q
gs
- 0.9 -
Gate-Drain Charge
Q
gd
- 1.1 -
Turn-on Delay time
t
d(on)
VDS=-10V, ID=-1A
V
GS
=-4.5V RG=6
(Fig.2)
- 11.5 -
ns
Turn-on Rise time
t
r
- 15.6 -
Turn-off Delay time
t
d(off)
- 83.1 -
Turn-off Fall time
t
f
- 43.6 -
Input Capacitance
C
iss
VDS=-20V, VGS=0V f = 1.0MHz
- 295 -
pF
Output Capacitance
C
oss
- 63 -
Reverse Trancefer Capacitance
C
rss
- 52 -
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2005. 11. 23 3/5
KMA2D0DP20X
Revision No : 0
-
20
-1
6
(A)
D
-1
2
-
8
Drain Current I
-
4
0
0
1.3
th
1.2
1.1
ID - V
DS
-10
V
-
6V
-
-0.5
-
1
1.5
Drain - Source Voltage V
Vth - T
j
-
2
DS
(V)
-
4.5V
-
4V
-
3V
-
V
=
2V
GS
-
2.5
ID= -250µA
DS = VGS
V
ID - V
GS
-1
5
-1
2
(A)
D
-
9
-
6
Drain Current I
-
3
0
-
3
-
0
0.8
-
1.6
Tj= -55
Tj=25
-
C
2.4
C
Tj=125
C
-
-
-
3.2
4.0
4.8
Gate - Source Voltage VGS (V)
IS - V
SD
-
20
(A)
-
10
S
1.0
0.9
0.8
0.7
Normalized Threshold Voltage V
0.6
-75 -50-
25
05025 10075 125
Junction Temperature Tj ( )
R
DS(ON)
2.2
VGS = -4.5V
I
=-2.0A
DS
1.8
1.4
1.0
0.6
0.2
Normalized On Resistance
0
-75 -50
-25
25
0
- T
Reverse Drain Current I
-
1
-
0.4
C
-
0.8
Source - Drain Voltage V
-
1.2
j
C - V
DS
-
1.6
500
-
2.0
(V)
SD
Frequency = 1MHz
-
2.4
400
C
iss
300
200
Capacitance (pF)
50
75
100
125
100
C
oss
C
rss
0
-
0
5
-
-
-
10
15
20
-
-
25
30
Junction Temperture Tj ( )
C
Drain - Source Voltage V
DS
(V)
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KMA2D0DP20X
Revision No : 0
-
5
V
= -4.5V
DS
I
= -2.0A
D
-
4
(V)
GS
-
3
-
2
-
1
Gate - Source Voltage V
0
Qg - V
GS
431203.51.5 2.50.5
Gate - Charge
1
-1
10
0.5
0.2
-2
10
0.1
0.05
0.02
Single Pluse
Normalized Transient Thermal Resistance
0.01
-3
10
-5
10
-4
10
-3
10
10
Square Wave Pulse Duration (sec)
Qg (nC)
R
th
P
DM
- Duty Factor, D= t1/t
- R
-2
-1
10
110
10
thJC
1
t
1
t
2
T
j(max)
=
10
2
- T
c
P
D
2
3
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2005. 11. 23 5/5
KMA2D0DP20X
Revision No : 0
Fig. 1 Gate Charge
I
0.5 V
DSS
V
GS
-
4.5 V
Schottky
1.0 mA
Diode
V
GS
I
D
V
DS
Q
gs
Q
gd
Q
g
Q
D
Fig. 2 Resistive Load Switching
0.5 V
DSS
6Ω
-4.5
V
V
GS
t
R
L
V
DS
t
d(on)
V
GS
10%
DS
90%
V
on
t
r
t
d(off)
t
off
t
f
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