Datasheet KM681002A, KM681002AI Datasheet (SAMSUNG)

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PRELIMINARY

KM681002A, KM681002AI

Document Title

128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out.
Operated at Commercial and Industrial Temperature Range.

Revision History

Rev. No.

Rev. 0.0

Rev. 1.0

Rev. 2.0

Rev. 3.0

History

Initial release with Preliminary.

Release to final Data Sheet.

1.1. Delete Preliminary

Update D.C parameters.

2.1. Update D.C parameters
Items
Icc 200/190/180/170mA 170/165/165/160mA

Isb 30mA 25mA
Isb1 10mA 8mA

Add Industrial Temperature Range parts and 300mil-SOJ PKG.

3.1. Add 32-Pin 300mil-SOJ Package.

3.2. Add Industrial Temperature Range parts with the same parame-

ters as Commercial Temperature Range parts.

3.2.1. Add KM68002AI parts for Industrial Temperature Range.

3.2.2. Add ordering information.

3.2.3. Add the condition for operating at Industrial Temp. Range.

3.3. Add the test condition for Voh1 with Vcc=5V±5% at 25°C

3.4. Add timing diagram to define tWP as ″(Timing Wave Form of

Write Cycle(CS=Controlled)″

Previous spec.

(12/15/17/20ns part)

Updated spec.

(12/15/17/20ns part)

CMOS SRAM

Draft Data

Apr. 22th, 1995

Feb. 29th, 1996

Jul. 16th, 1996

Jun. 2nd, 1997

Remark

Preliminary

Final

Final

Final

Rev. 4.0

4.1. Delete 17ns Part

Feb. 25th, 1998

Final

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this
device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

- 1 -

Rev 4.0

Ferruary 1998

PRELIMINARY

KM681002A, KM681002AI

128K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTIONFEATURES

• Fast Access Time 12, 15, 20ns(Max.)

• Low Power Dissipation
Standby (TTL) : 25mA(Max.)
(CMOS) : 8mA(Max.)
Operating KM681002A - 12 : 170mA(Max.)
KM681002A - 15 : 165mA(Max.)
KM681002A - 20 : 160mA(Max.)

• Single 5.0V±10% Power Supply

• TTL Compatible Inputs and Outputs

• I/O Compatible with 3.3V Device

• Fully Static Operation

- No Clock or Refresh required

• Three State Outputs

• Center Power/Ground Pin Configuration

• Standard Pin Configuration
KM681002AJ : 32-SOJ-400
KM681002AT: 32-TSOP2-400F

FUNCTIONAL BLOCK DIAGRAM

A0
A1
A2
A3
A4
A5
A6
A7
A8

I/O1~I/O8

Clk Gen.

Row Select

Data

Cont.

Pre-Charge Circuit

Memory Array

512 Rows

256x8 Columns

I/O Circuit

Column Select

The KM681002A is a 1,048,576-bit high-speed Static Random
Access Memory organized as 131,072 words by 8 bits. The
KM681002A uses 8 common input and output lines and has an
output enable pin which operates faster than address access
time at read cycle. The device is fabricated using Samsung′s
advanced CMOS process and designed for high-speed circuit
technology. It is particularly well suited for use in high-density
high-speed system applications. The KM681002A is packaged
in a 400mil 32-pin plastic SOJ or TSOP2 forward.

ORDERING INFORMATION

KM681002A -12/15/20 Commercial Temp.
KM681002AI -12/15/20 Industrial Temp.

PIN CONFIGURATION(Top View)

A0
A1
A2
A3

CS
I/O1
I/O2
Vcc
Vss
I/O3
I/O4

WE

A4
A5
A6
A7

CMOS SRAM

1
2
3
4
5
6
7
8

9
10
11
12
13
14
15
16

SOJ/

TSOP2

32

A16

31

A15

30

A14

29

A13

28

OE

27

I/O8

26

I/O7

25

Vss

24

Vcc

23

I/O6

22

I/O5

21

A12

20

A11

19

A10

18

A9

17

A8

CS
WE
OE

CLK
Gen.

A9 A10 A11 A12 A13 A14 A15 A16

PIN FUNCTION

Pin Name Pin Function

A0 - A16 Address Inputs

WE Write Enable

CS Chip Select
OE Output Enable

I/O1 ~ I/O8 Data Inputs/Outputs

VCC Power(+5.0V)
VSS Ground

- 2 -

Rev 4.0

Ferruary 1998

PRELIMINARY

KM681002A, KM681002AI

CMOS SRAM

ABSOLUTE MAXIMUM RATINGS*

Parameter Symbol Rating Unit

Voltage on Any Pin Relative to VSS VIN, VOUT -0.5 to 7.0 V
Voltage on VCC Supply Relative to VSS VCC -0.5 to 7.0 V
Power Dissipation PD 1.0
Storage Temperature TSTG -65 to 150 °C
Operating Temperature Commercial TA 0 to 70 °C

Industrial TA -40 to 85 °C

* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and

functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.

W

RECOMMENDED DC OPERATING CONDITIONS(TA=0 to 70°C)

Parameter

Supply Voltage VCC 4.5 5.0 5.5 V
Ground VSS 0 0 0 V
Input High Voltage VIH 2.2 - VCC + 0.5** V
Input Low Voltage VIL -0.5* - 0.8 V

NOTE: The above parameters are also guaranteed at industrial temperature range.

* VIL(Min) = -2.0V a.c(Pulse Width≤10ns) for I≤20mA

** VIH(Max) = VCC + 2.0V a.c (Pulse Width≤10ns) for I≤20mA

Symbol

Min

Typ Max Unit

DC AND OPERATING CHARACTERISTICS(TA=0 to 70°C, Vcc=5.0V±10%, unless otherwise specified)

Parameter Symbol Test Conditions Min Max Unit

Input Leakage Current ILI VIN=VSS to VCC -2 2 µA
Output Leakage Current ILO CS=VIH or OE=VIH or WE=VIL

VOUT=VSS to VCC

Operating Current ICC Min. Cycle, 100% Duty

CS=VIL, VIN=VIH or VIL,
IOUT=0mA

Standby Current ISB Min. Cycle, CS=VIH - 25 mA

ISB1 f=0MHz, CS ≥VCC-0.2V,

VIN≥VCC-0.2V or VIN≤0.2V
Output Low Voltage Level VOL IOL=8mA - 0.4 V
Output High Voltage Level VOH IOH=-4mA 2.4 - V

VOH1* IOH1=-0.1mA - 3.95 V

NOTE: The above parameters are also guaranteed at industrial temperature range.

* VCC=5.0V, Temp.=25°C

12ns - 170 mA
15ns - 165
20ns - 160

-2 2 µA

- 8 mA

CAPACITANCE*(TA=25°C, f=1.0MHz)

Item Symbol Test Conditions MIN Max Unit

Input/Output Capacitance CI/O VI/O=0V - 8 pF
Input Capacitance CIN

* NOTE : Capacitance is sampled and not 100% tested.

VIN=0V

- 6 pF

- 3 -

Rev 4.0

Ferruary 1998

PRELIMINARY

KM681002A, KM681002AI

AC CHARACTERISTICS(TA=0 to 70°C, VCC=5.0V±10%, unless otherwise noted.)

TEST CONDITIONS

Parameter Value

Input Pulse Levels 0V to 3V
Input Rise and Fall Times 3ns
Input and Output timing Reference Levels 1.5V
Output Loads See below

NOTE : The above test conditions are also applied at industrial temperature range.

Output Loads(A) Output Loads(B)

for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ

+5.0V
480Ω

DOUT

255Ω

30pF*

DOUT

255Ω

CMOS SRAM

+5.0V
480Ω

5pF*

* Including Scope and Jig Capacitance

READ CYCLE

Parameter Symbol

Read Cycle Time tRC 12 - 15 - 20 - ns
Address Access Time tAA - 12 - 15 - 20 ns
Chip Select to Output tCO - 12 - 15 - 20 ns
Output Enable to Valid Output tOE - 6 - 7 - 9 ns
Chip Enable to Low-Z Output tLZ 3 - 3 - 3 - ns
Output Enable to Low-Z Output tOLZ 0 - 0 - 0 - ns
Chip Disable to High-Z Output tHZ 0 6 0 7 0 9 ns
Output Disable to High-Z Output
Output Hold from Address Change tOH 3 - 3 - 3 - ns
Chip Selection to Power Up Time tPU 0 - 0 - 0 - ns
Chip Selection to Power DownTime tPD - 12 - 15 - 20 ns

NOTE : The above parameters are also guaranteed at industrial temperature range.

tOHZ

KM681002A-12 KM681002A-15 KM681002A-20

Min Max Min Max Min Max

0 6 0 7 0 9 ns

Unit

- 4 -

Rev 4.0

Ferruary 1998

PRELIMINARY

KM681002A, KM681002AI

CMOS SRAM

WRITE CYCLE

Parameter Symbol

Write Cycle Time tWC 12 - 15 - 20 ­Chip Select to End of Write tCW 8 - 10 - 12 ­Address Set-up Time tAS 0 - 0 - 0 ­Address Valid to End of Write tAW 8 - 10 - 12 ­Write Pulse Width(OE High) tWP 8 - 10 - 12 ­Write Pulse Width(OE Low) tWP1 12 - 15 - 20 - ns
Write Recovery Time tWR 0 - 0 - 0 - ns
Write to Output High-Z tWHZ 0 6 0 7 0 9 ns
Data to Write Time Overlap tDW 6 - 7 - 9 - ns
Data Hold from Write Time tDH 0 - 0 - 0 - ns
End Write to Output Low-Z tOW 3 - 3 - 3 - ns

NOTE : The above parameters are also guaranteed at industrial temperature range.

KM681002A-12 KM681002A-15 KM681002A-20

Min Max Min Max Min Max

TIMMING DIAGRAMS

TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH)

Unit

ns
ns
ns
ns
ns

Address

tOH

Data Out

Previous Valid Data

TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)

Address

tAA

CS

OE

tOLZ

Data out

VCC
Current

ICC
ISB

tLZ(4,5)

tPU tPD

50%

tCO

tOE

tRC

tAA

Valid Data

tRC

tHZ(3,4,5)

tOHZ

tOH

Valid Data

50%

- 5 -

Rev 4.0

Ferruary 1998

PRELIMINARY

KM681002A, KM681002AI

NOTES(READ CYCLE)

1. WE is high for read cycle.

2. All read cycle timing is referenced from the last valid address to the first transition address.

3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or
VOL levels.

4. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to
device.

5. Transition is measured ±200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested.

6. Device is continuously selected with CS=VIL.

7. Address valid prior to coincident with CS transition low.

8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.

TIMING WAVEFORM OF WRITE CYCLE(1) (OE= Clock)

Address

OE

CS

tAS(4)

tAW

CMOS SRAM

tWC

tWR(5)

tCW(3)

tWP(2)

WE

Data in

Data out

High-Z

tOHZ(6)

TIMING WAVEFORM OF WRITE CYCLE(2) (OE=Low Fixed)

Address

CS

tAS(4)

WE

Data in

Data out

High-Z

tAW

tWHZ(6)

tWC

tCW(3)

tWP1(2)

tDW tDH

Valid Data

High-Z(8)

tDW tDH

Valid Data

High-Z(8)

tWR(5)

tOW

(10)

(9)

- 6 -

Rev 4.0

Ferruary 1998

PRELIMINARY

KM681002A, KM681002AI

TIMING WAVEFORM OF WRITE CYCLE(3) (CS = Controlled)

Address

CS

WE

Data in

Data out

NOTES(WRITE CYCLE)

1. All write cycle timing is referenced from the last valid address to the first transition address.

2. A write occurs during the overlap of a low CS and WE. A write begins at the latest transition CS going low and WE going low

A write ends at the earliest transition CS going high or WE going high. tWP is measured from the beginning of write to the end of
write.

3. tCW is measured from the later of CS going low to end of write.

4. tAS is measured from the address valid to the beginning of write.

5. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CS or WE going high.

6. If OE, CS and WE are in the Read Mode during this period, the I/O pins are in the output low-Z state. Inputs of opposite phase

of the output must not be applied because bus contention can occur.

7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.

8. If CS goes low simultaneously with WE going or after WE going low, the outputs remain high impedance state.

9. Dout is the read data of the new address.

10. When CS is low : I/O pins are in the output state. The input signals in the opposite phase leading to the output should not be

applied.

High-Z

tLZ

High-Z

tAW

tWHZ(6)

tWC

tCW(3)

CMOS SRAM

tWR(5)

tWP(2)tAS(4)

tDW

Data Valid

tDH

High-Z

High-Z(8)

FUNCTIONAL DESCRIPTION

CS WE OE Mode I/O Pin Supply Current

H X X* Not Select High-Z ISB, ISB1
L H H Output Disable High-Z ICC
L H L Read DOUT ICC
L L X Write DIN ICC

* NOTE : X means Don′t Care.

- 7 -

Rev 4.0

Ferruary 1998

PRELIMINARY

KM681002A, KM681002AI

PACKAGE DIMENSIONS

32-SOJ-400

#32

11.18 ±0.12

0.440 ±0.005

#1

21.36

0.841

20.95 ±0.12

0.825 ±0.005

MAX

#17

#16

1.30

( )

0.051

1.30

( )

0.051

CMOS SRAM

Units:millimeters/Inches

0.10

0.004

0.370 ±0.010

10.16

3.76

0.148

0.400

0.027

0.69

MAX

MIN

9.40 ±0.25

0.20

0.008

MAX

+0.10

-0.05

+0.004

-0.002

0.95

( )

0.0375

32-TSOP2-400F

#32

#1

0.95

( )

0.037

+0.10

0.43

-0.05

+0.004

0.017

-0.002

0.40 ±0.10

0.016 ±0.004

21.35

MAX

0.841

20.95 ±0.10

0.825 ±0.004

1.27

0.050

1.27

0.050

0.71

0.028

#17

#16

+0.10

-0.05

+0.004

-0.002

0.002

11.76 ±0.20

0.463 ±0.008

1.00 ±0.10

0.039 ±0.004

0.05

MIN

1.20

0.047

( )

10.16

0.15

0.006

MAX

Units:millimeters/Inches

0.25

0.010

0.400

+0.10

-0.05
+0.004

-0.002

0~8°

0.10 MAX

0.004 MAX

0.45 ~0.75

0.018 ~ 0.030

0.50

( )

0.020

- 8 -

Rev 4.0

Ferruary 1998

PRELIMINARY

KM681002A, KM681002AI

PACKAGE DIMENSIONS

CMOS SRAM

- 9 -

Rev 4.0

Ferruary 1998