Page 1
2002. 10. 14 1/3
SEMICONDUCTOR
TECHNICAL DATA
KIC7SZU04FU
SILICON MONOLITHIC CMOS
DIGITAL INTEGRATED CIRCUIT
Revision No : 1
INVERTER (UNBUFFER)
FEATURES
High Output Drive : 16mA (Typ.) @VCC=4.5V
Super High Speed Operation : tPD=2.4ns(Typ.) @VCC=5V, 50pF
Operation Voltage Range : V
CC(opr)
=1.8 5.5V.
Supply Voltage Data Retention : VCC=1.5 5.5V.
MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Supply Voltage Range
V
CC
-0.5 6
V
DC Input Voltage
V
IN
-0.5 6
V
DC Output Voltage
V
OUT
-0.5 VCC+0.5
V
Input Diode Current
I
IK
20
mA
Output Diode Current
I
OK
20
mA
DC Output Current
I
OUT
50
mA
DC VCC/Ground Current I
CC
50
mA
Power Dissipation
P
D
200 mW
Storage Temperature
T
stg
-65 150
Lead Temperature (10s)
T
L
260
1
C
2
A
A1
C
3
H
MARKING
B
B1
G
T N
5
4
USV
DIM MILLIMETERS
A
B
D
B1
C
D
G
H
T
T
Type Name
_
+
2.00 0.20
_
+
1.3 0.1A1
_
+
2.1 0.1
_
+
1.25 0.1
0.65
0.2+0.10/-0.05
0-0.1
_
+
0.9 0.1
0.15+0.1/-0.05
PIN CONNECTION (TOP VIEW)
V
CC
123
NC IN A GND
OUT Y
45
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2002. 10. 14 2/3
KIC7SZU04FU
Revision No : 1
DC ELECTRICAL CHARACTERISTICS
LOGIC DIAGRAM
CHARACTERISTIC SYMBOL TEST CONDITION
Ta=25 Ta=-40 85
UNIT
VCC(V)
MIN. TYP. MAX. MIN. MAX.
High-Level Input Voltage
V
IH
-
1.8
0.85
V
CC
- -
0.85
V
CC
-
V
2.3
5.5
0.8
V
CC
- -
0.8
V
CC
-
Low-Level
Input Voltage
V
IL
-
1.8
2.7
- -
0.15
V
CC
-
0.15
V
CC
V
3.0
5.5
- -
0.2
V
CC
-
0.2
V
CC
High-Level
Output Voltage
V
OH
VIN=V
IL
IOH=-100 A
1.8 1.6 1.8 - 1.6 -
V
2.3 2.1 2.3 - 2.1 -
3.0 2.7 3.0 - 2.7 -
4.5 4.0 4.5 - 4.0 -
IOH=-4mA
2.3 1.9 2.14 - 1.9 -
IOH=-8mA
3.0 2.4 2.75 - 2.4 -
IOH=-12mA
3.0 2.3 2.61 - 2.3 -
IOH=-16mA
4.5 3.8 4.13 - 3.8 -
Low-Level
Output Voltage
V
OL
VIN=V
IH
IOL=100 A
1.8 - 0 0.2 - 0.2
V
2.3 - 0 0.2 - 0.2
3.0 - 0 0.3 - 0.3
4.5 - 0 0.5 - 0.5
IOL=4mA
2.3 - 0.1 0.3 - 0.3
IOL=8mA
3.0 - 0.17 0.4 - 0.4
IOL=12mA
3.0 - 0.25 0.55 - 0.55
IOL=16mA
4.5 - 0.26 0.55 - 0.55
Input Leakage Current
I
IN
VIN=5.5V or GND
0 5.5
- -
1
-
10
A
Quiescent Supply Current
I
CC
VIN=V
CC
or GND
5.5 - - 2 - 20
IN A
1
OUT Y
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2002. 10. 14 3/3
KIC7SZU04FU
Revision No : 1
AC ELECTRICAL CHARACTERISTICS (Input tr=tf=3ns)
Note 1 : CPDdefined as the value of internal equivalent capacitance of IC which is calculated from the operating current
consumption without load (refer to Test Circuit.) Average operating current can be obtained by the equation hereunder.
I
CC(opr)=CPDVCCfIN+ICC
CHARACTERISTIC SYMBOL TEST CONDITION
Ta=25 Ta=-40 85
UNIT
VCC(V)
MIN. TYP. MAX. MIN. MAX.
Propagation Delay Time
t
PLH
t
PHL
CL=15pF,
R
L
=1M
1.8 1.0 - 8.5 1.0 9.0
ns
2.5 0.2
0.8 - 6.2 0.8 6.5
3.3 0.3
0.5 - 4.5 0.5 4.8
5.0 0.5
0.5 - 3.9 0.5 4.1
CL=50pF,
R
L
=500
3.3 0.3
1.0 - 6.0 1.5 6.5
5.0 0.5
0.8 - 5.0 0.8 5.5
Input Capacitance
C
IN
-
0 5.5
- 4.5 - - -
pF
Power Dissipation
Capacitance
C
PD
(Note 1)
3.3 - 6.3 - - -
3.5 - 9.5 - - -
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