Page 1
SEMICONDUCT
KIC7SZ38FU
SILICON MONOLITHIC CMOS
DIGITAL INTEGRATED CIRCUIT
Revision No : 0
2 INPUT NAND GATE (Open Drain Output)
FEATURES
·Open Drain Output Stage for OR tied application.
·Super High Speed : 2.4ns(Typ.) 50pF at VCC=5V.
·High Output Sink Drive : 24mA at VCC=3V.
·Operating Voltage Range : V
CC(opr)
=1.65~5.5V.
·Power Down High Impedance Inputs/Outputs.
G
1
3
2
B
B1
D
A
H
T
5
4
A1
1.3 0.1A1
+
_
+
_
+
_
+
_
+
_
MAXIMUM RATINGS (Ta=25℃)
MARKING
T N
Type Name
PIN CONNECTION(TOP VIEW)
TECHNICAL DATA
CHARACTERISTIC SYMBOL RATING UNIT
OR
DIMMILLIMETERS
A
B
B1
C
D
G
H
T
2.00 0.20
2.1 0.1
1.25 0.1
0.65
0.2+0.10/-0.05
0-0.1
0.9 0.1
0.15+0.1/-0.05
C
C
Power Supply Voltage Range
DC Input Voltage
DC Output Voltage
Input Diode Current
Output Diode Current
DC Output Current
DC VCC/Ground Current I
Power Dissipation
Storage Temperature Range
Lead Temperature (10s)
V
V
V
I
I
T
CC
IN
OUT
I
IK
OK
OUT
CC
P
D
stg
T
-0.5~6 V
-0.5~6 V
-0.5~6 V
USV
-50~20 mA
-50~20 mA
50 mA
±50
mA
200 mW
-65～150
L
260
℃
℃
IN B
IN A
1
2
GND
2002. 5. 13 1/3
34
5
V
CC
OUT Y
Page 2
Logic Diagram
IN B
(1)
(2)
(4)
IN A
&
OUT Y
ELECTRICAL CHARACTERISTICS
DC Characteristics
CHARACTERISTIC
SYMBOL
TEST CONDITION
Ta=25℃ Ta=-40~85℃
UNIT
KIC7SZ38FU
High Level
Input
Voltage
Low Level
High Level
Output
Leakage
Voltage
Low Level
Input Leakage Current
Power Off Leakage Current
Quiescent Supply Current
V
IH
V
IL
I
LKG
V
OL
I
IN
I
OFF
I
CC
-
-
VIN=V
IL
V
= V
OUT
or GND
CC
IOL=100μA
VIN=V
IH
IOL=4mA
IOL=8mA
IOL=16mA
IOL=24mA
IOL=32mA
VIN=5.5V or GND
VINor V
OUT
=5.5V
VIN=5.5V or GND
VCC(V)
1.65~1.95
2.3~5.5
1.65~1.95 - -
2.3~5.5
5.5 - -
MIN. TYP. MAX. MIN. MAX.
0.75×
V
CC
0.7×V
- -
CC
- -
- -
0.25×
V
0.3×V
±5
CC
CC
0.75×
V
CC
0.7×V
-
-
-
CC
1.65 - 0 0.1 - 0.1
1.8 - 0 0.1 - 0.1
2.3 - 0 0.1 - 0.1
3.0 - 0 0.1 - 0.1
4.5 - 0 0.1 - 0.1
1.65 - 0.08 0.24 - 0.24
2.3 - 0.10 0.3 - 0.3
3.0 - 0.15 0.4 - 0.4
3.0 - 0.22 0.55 - 0.55
4.5 - 0.22 0.55 - 0.55
0~5.5 - -
±1
-
0.0 - - 1 - 10
5.5 - - 2.0 - 20
-
-
0.25×
V
CC
0.3×V
CC
±10 μA
±10 μA
V
V
μA
μA
2002. 5. 13 2/3
Revision No : 0
Page 3
KIC7SZ38FU
AC Characteristics (unless otherwise specified, Input : tr=tf=3ns)
Note : CPDis defined as the value of the internal equivalent capacitance which is derived from dynamic operating current consumption
(I
CCD
) at no output loading and operating at 50% duty cycle. (See Figure2.) CPDis related to I
CCD
dynamic operating current
by the expression : I
CCD=CPD·VCC·fIN+ICC
Static
VCC(V)
MIN. TYP. MAX. MIN. MAX.
Propagation delay time
t
PZL
CL=50pF,
RU=500Ω
RD=500Ω
VI=2×V
CC
(Figures 1,3)
1.65 1.5 6.5 12.7 1.5 13.2
ns
1.8 1.5 5.4 10.5 1.5 11.0
2.5±0.2
0.8 3.5 7.0 0.8 7.5
3.3±0.3
0.8 2.8 5.0 0.8 5.2
5.0±0.5
0.5 2.2 4.3 0.5 4.5
t
PLZ
CL=50pF,
RU=500Ω
RD=500Ω
VI=2×V
CC
(Figures 1,3)
1.65 1.5 5.5 12.7 1.5 13.2
ns
1.8 1.5 4.6 10.5 1.5 11.0
2.5±0.2
0.8 3.0 7.0 0.8 7.5
3.3±0.3
0.8 2.1 5.0 0.8 5.2
5.0±0.5
0.5 1.3 4.3 0.5 4.5
Input Capacitance
C
IN
- 0 - 4 - - - pF
Output Capacitance
C
OUT
- 0 - 5 - - - pF
Power Dissipation
Capacitance
C
PD
(Note)
(Figures 2)
3.3 - 5.1 - - pF
5.0 - 7.3 - - -
L
w
L
C
CC
V
CC
V
RU
RD
90%
50%
10%
V
CC
GND
t
PZL
t
w
t
PLZ
INPUT
OUTPUT
r
f
OH
V
V
OL
V +0.3V
OL
50%
t
AC Loading and Waveforms
CHARACTERISTIC SYMBOL
TEST CONDITION
Ta=25℃ Ta=-40~85℃
UNIT
A
INPUT
C includes load and stray capacitance
Input PRR=1.0MHz ; t =500ns
t =3ns t =3ns
FIGURE 1. AC Test Circuit
OUTPUT
INPUT
Input=AC Waveform ; t =t =1.8ns
PRR=10MHz ; Duty Cycle=50%
FIGURE 2. I Test Circui
CCD
r
f
FIGURE 3. AC Waveforms
2002. 5. 13 3/3
Revision No : 0
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