Datasheet khb9d5n20p_f_f2 Datasheet

2008. 12. 19 1/7

SEMICONDUCTOR

TECHNICAL DATA

KHB9D5N20P/F/F2

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

Revision No : 2

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for electronic ballast and

switch mode power supplies.

FEATURES

·V

DSS

=200V, ID=9.5A

·Drain-Source ON Resistance

: R

DS(ON)

=400mΩ @V

GS

= 10V

·Qg(typ.)=18.5nC

MAXIMUM RATING (Ta=25℃)

* : Drain current limited by maximum junction temperature.

CHARACTERISTIC

SYMBOL

RATING

UNIT

KHB9D5N20P

KHB9D5N20F

KHB9D5N20F2

Drain-Source Voltage

V

DSS

200 V

Gate-Source Voltage

V

GSS

±30

V

Drain Current

@T

C

=25℃

I

D

9.5 9.5* A

Pulsed (Note1)

I

DP

38 38*

Single Pulsed Avalanche Energy (Note 2)

E

AS

180

mJ

Repetitive Avalanche Energy (Note 1)

E

AR

8.7

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt 5.5

V/ns

Drain Power Dissipation

Tc=25℃

P

D

87 40 W

Derate above25℃

0.7 0.32

W/℃

Maximum Junction Temperature

T

j

150

℃

Storage Temperature Range

T

stg

-55～150

℃

Thermal Characteristics

Thermal Resistance, Junction-to-Case

R

thJC

1.44 3.13

℃/W

Thermal Resistance, Junction-toAmbient

R

thJA

62.5 62.5

℃/W

DIM MILLIMETERS

TO-220AB

1.46

A

B

C

D

E

F

G

H

J

K

M

N

O

0.8 0.1

+

_

2.8 0.1

+

_

2.54 0.2

+

_

1.27 0.1

+

_

1.4 0.1

+

_

13.08 0.3

+

_

3.6 0.2

+

_

+

_

9.9 0.2

+

_

9.2 0.2

+

_

4.5 0.2

+

_

2.4 0.2

15.95 MAX

1.3+0.1/-0.05

0.5+0.1/-0.05

3.7

1.5

A

F

B

J

G

K

M

L

E

I

O

C

H

NN

Q

D

Q

P

1. GATE

2. DRAIN

3. SOURCE

123

KHB9D5N20P

KHB9D5N20F

KHB9D5N20F2

PIN CONNECTION

G

D

S

E

K

L

D

Q

S

E

L

K

A

NN

123

A

D

N

2

1

F

B

G

M

J

TO-220IS (1)

F

B

G

L

M

J

D

N

Q

3

TO-220IS

O

H

1. GATE

2. DRAIN

3. SOURCE

P

1. GATE

2. DRAIN

3. SOURCE

C

DIM

MILLIMETERS

_

10.16 0.2

A

+ _

15.87 0.2

B

+

_

2.54 0.2

C

+

_

0.8 0.1

D

+

_

E

3.18 0.1

+

_

3.3 0.1

F

+

_

12.57 0.2

G

+

_

H

0.5 0.1

J

K

L

M

N

O

Q

R

MILLIMETERS

A

B

C

0.76+0.09/-0.05

D

E

F

G

0.5+0.1/-0.05

H

J

K

L

M

N

P

Q

R

S

+

13.0 MAX

_

3.23 0.1

+

1.47 MAX

_

2.54 0.2

+ _

6.68 0.2

+ _

+

4.7 0.2

_

2.76 0.2

+

_

10.0 0.3

+ _

+

15.0 0.3

_

+

2.70 0.3

_

Φ3.2 0.2

+

_

3.0 0.3

+

_

12.0 0.3

+

_

13.6 0.5

+

_

3.7 0.2

+

1.2+0.25/-0.1

1.5+0.25/-0.1

_

2.54 0.1

+

_

6.8 0.1

+ _

4.5 0.2

+ _

2.6 0.2

+

0.5 Typ

R

C

DIM

R

H

2008. 12. 19 2/7

KHB9D5N20P/F/F2

Revision No : 2

ELECTRICAL CHARACTERISTICS (Ta=25℃)

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 2) L =3mH, I

AS

=9.5A, VDD=50V, R

G

=25Ω, Starting Tj=25℃.

Note 3) I

S

≤9.5A, dI/dt≤300A/㎲, VDD≤BV

DSS

, Starting T

j

=25℃.

Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%.

Note 5) Essentially independent of operating temperature.

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage

BV

DSS

I

D

=250μA, V

GS

=0V

200 - - V

Breakdown Voltage Temperature Coefficient

ΔBV

DSS

/ΔT

jID

=250μA, Referenced to 25℃

- 0.19 -

V/℃

Gate Threshold Voltage

V

th

VDS=VGS, I

D

=250μA

2.0 - 4.0 V

Drain Cut-off Current

I

DSS

VDS=200V, VGS=0V,

- - 1

μA

Gate Leakage Current

I

GSS

V

GS

=±30V, V

DS

=0V

- -

±100

nA

Drain-Source ON Resistance

R

DS(ON)

VGS=10V, ID=4.75A

- 345 400

mΩ

Forward Transconductance

g

FS

VDS=40V, ID=4.75A (Note4)

- 6.7 - S

Dynamic

Total Gate Charge

Q

g

VDS=160V, ID=9.5A

V

GS

=10V (Note4, 5)

- 18.5 23

nCGate-Source Charge

Q

gs

- 2.7 -

Gate-Drain Charge

Q

gd

- 9 -

Turn-on Delay time

t

d(on)

VDD=100V, R

G

=25Ω

I

D

=9.5A (Note4, 5)

- 11 32

ns

Turn-on Rise time

t

r

- 62 135

Turn-off Delay time

t

d(off)

- 46 102

Turn-off Fall time

t

f

- 80 170

Input Capacitance

C

iss

VDS=25V, VGS=0V, f=1.0MHz

- 387 503

pF

Output Capacitance

C

oss

- 96 125

Reverse Transfer Capacitance

C

rss

- 34 45

Source-Drain Diode Ratings

Continuous Source Current

I

S

VGS<V

th

- - 9.5 A

Pulsed Source Current

I

SP

- - 38

Diode Forward Voltage

V

SD

IS=9.5A, VGS=0V

- - 1.5 V

Reverse Recovery Time

t

rr

IS=9.5A, VGS=0V,

dIs/dt=100A/μs (Note 4)

- 130 - ns

Reverse Recovery Charge

Q

rr

- 0.6 -

μC

2008. 12. 19 3/7

KHB9D5N20P/F/F2

Revision No : 2

VGS

TOP : 15.0 V

10.0 V

8.0 V

1

(A)

D

10

Bottom : 5.0 V

0

7.0 V

6.5 V

6.0 V

5.5 V

Drain Current I

-1

10

-1

10

1.2

DSS

VGS = 0V

= 250µA

I

DS

1.1

Fig1. ID - V

0

10

DS

1

10

Drain - Source Voltage VDS (V)

Fig4. BV

DSS

- T

j

VDS = 40V 250µs Pulse Test

1

10

(A)

D

0

10

Drain Current I

-1

10

2.0

(Ω)

1.5

DS(ON)

150

25

Fig2. ID - V

C

GS

-55

C

684102

Gate - Source Voltage VGS (V)

Fig5. R

DS(ON)

- I

D

1.0

0.9

0.8

-100 1000 150-50 50

Normalized Breakdown Voltage BV

Junction Temperature Tj ( )

Fig6. IS - V

(A)

S

1

10

0

10

25

150

C

Reverse Drain Current I

-1

10

0.2 0.4 0.8 1.0 1.2 1.81.61.40.6

C

SD

1.0

0.5

VGS = 10V

VGS = 20V

On - Resistance R

0

510 30252015

C

Drain Current I

Fig6. R

3.0

V

= 10V

GS

= 5A

I

DS

2.5

2.0

1.5

1.0

0.5

Normalized On Resistance

0.0 0

(A)

D

- T

DS(ON)

j

50-100 -50 100 150

Source - Drain Voltage V

SD

(V)

Junction Temperature Tj ( )

C

2008. 12. 19 4/7

KHB9D5N20P/F/F2

Revision No : 2

2500

2000

C

iss

1500

C

1000

Capacitance (pF)

500

(A)

D

Drain Current I

oss

C

rss

0

-

1

10

Operation in this area is limited by R

2

10

1

10

0

10

TC= 25

C

= 150

T

j

Single nonrepetitive pulse

-1

10

0

10

Fig7. C - V

0

10

DS

Drain - Source Voltage V

Fig9. Safe Operation Area

(KHB9D5N20P)

DS(ON)

C

1

10

Drain - Source Voltage V

Frequency =1MHz

1

10

(V)

DS

100µs

1ms

10ms 100ms

DC

2

10

(V)

DS

12

ID= 9.5A

10

(V)

GS

8

6

4

2

Gate - Source Voltage V

0

5

Fig10. Safe Operation Area

2

Operation in this

10

area is limited by R

(A)

D

1

10

0

10

Drain Current I

TC= 25

C

= 150

T

C

j

Single nonrepetitive pulse

-1

10

0

10

Drain - Source Voltage V

Fig8. Qg- V

VDS = 50V

VDS = 125V

VDS = 200V

GS

10

Gate - Charge

Qg (nC)

(KHB9D5N20F, KHB9D5N20F2)

DS(ON)

100 µs

1 ms

10 ms

100 ms

DC

1

10

2

10

(V)

DS

2015

Fig11. ID - T

j

12

10

(A)

8

D

6

4

Drain Current I

2

0

25

50

Junction Temperature Tj ( )

75

100

C

150125

2008. 12. 19 5/7

KHB9D5N20P/F/F2

Revision No : 2

)

Fig12. Transient Thermal Response Curve

0

10

Duty=0.5

0.2

-1

10

0.1

0.05

0.02

0.01

-2

10

-5

10

Normalized Transient Thermal Resistance

Single Pulse

-4

10

Fig13. Transient Thermal Response Curve

0

10

0.5

Duty=

0.2

-3

-2

10

TIME (sec)

(KHB9D5N20P)

P

DM

- Duty Factor, D= t1/t

- R

-1

10

thjc

=1.44

10

t

1

t

2

0

(KHB9D5N20F, KHB9D5N20F2)

1

10

0.1

-1

10

0.05

0.02

0.01

-2

10

-5

10

Normalized Transient Thermal Resistance

Single

P

ul

se

-4

10

-3

-2

10

TIME (sec

P

DM

- Duty Factor, D= t1/t

- R

-1

10

thjc

=3.13

10

t

1

t

2

0

1

10

2008. 12. 19 6/7

KHB9D5N20P/F/F2

Revision No : 2

Fig14. Gate Charge

I

D

0.8 V

DSS

1.0 mA

V

Fig15. Single Pulsed Avalanche Energy

Fast Recovery Diode

GS

V

GS

10 V

I

D

V

DS

BV

DSS

Q

gs

1

EAS= LI

2

Q

gd

2

AS

BV

DSS

Q

DSS

- V

g

DD

Q

0.5 V

DSS

10 V

25Ω

L

V

DS

V

GS

I

AS

I

(t)

D

V

DD

VDS(t)

Time

t

p

2008. 12. 19 7/7

KHB9D5N20P/F/F2

Revision No : 2

Fig16. Resistive Load Switching

0.5 V

DSS

V

DS

R

L

90%

10V

25 Ω

V

GS

V

Fig17. Source - Drain Diode Reverse Recovery and dv /dt

DUT

V

I

F

I

0.8 x V

DSS

10V

driver

V

GS

S

DS

V

GS

I

SD

(DUT)

V

DS

(DUT)

10%

t

r

d(on)

t

on

Body Diode Forword Current

V

SD

t

f

t

d(off)

t

off

di/dt

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

DD

Body Diode Forword Voltage drop