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2007. 12. 26 1/7
SEMICONDUCTOR
TECHNICAL DATA
KHB9D5N20D
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
Revision No : 0
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switch mode power supplies.
FEATURES
·V
DSS
=200V, ID=9.5A
·Drain-Source ON Resistance
: R
DS(ON)
=400mΩ @V
GS
= 10V
·Qg(typ.)=18.5nC
MAXIMUM RATING (Tc=25℃)
PIN CONNECTION
CHARACTERISTIC
SYMBOL
RATING UNIT
Drain-Source Voltage
V
DSS
200 V
Gate-Source Voltage
V
GSS
±30
V
Drain Current
@T
C
=25℃
I
D
9.5
A
Pulsed (Note1)
I
DP
38
Single Pulsed Avalanche Energy
(Note 2)
E
AS
180
mJ
Repetitive Avalanche Energy
(Note 1)
E
AR
8.7
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt 5.5
V/ns
Drain Power
Dissipation
Tc=25℃
P
D
54 W
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Thermal Characteristics
Thermal Resistance, Junction-to-Case
R
thJC
2.3
℃/W
Thermal Resistance, Junction-toAmbient
R
thJA
50
℃/W
A
C
H
G
FF
123
O
D
B
J
E
K
DIM
L
N
M
MILLIMETERS
A
6.60 0.20+
6.10 0.20+
B
5.34 0.30+
C
D
0.70 0.20+
E
2.70 0.15
2.30 0.10
F
0.96 MAX
G
0.90 MAX
H
1.80 0.20+
J
2.30 0.10+
K
0.50 0.10
L
M
0.50 0.10
0.70 MIN
N
0.1 MAX
O
_
_
_
_
_
+
_
+
_
_
_
+
_
+
DPAK (1)
G
D
S
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KHB9D5N20D
Revision No : 0
ELECTRICAL CHARACTERISTICS (Tc=25℃)
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =3mH, I
AS
=9.5A, VDD=50V, R
G
=25Ω, Starting Tj=25℃.
Note 3) I
S
≤9.5A, dI/dt≤300A/㎲, VDD≤BV
DSS
, Starting T
j
=25℃.
Note 4) Pulse Test : Pulse width
≤ 300㎲, Duty Cycle ≤ 2%.
Note 5) Essentially independent of operating temperature.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250μA, V
GS
=0V
200 - - V
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
jID
=250μA, Referenced to 25℃
- 0.19 -
V/℃
Gate Threshold Voltage
V
th
VDS=VGS, I
D
=250μA
2.0 - 4.0 V
Drain Cut-off Current
I
DSS
VDS=200V, VGS=0V,
- - 1
μA
Gate Leakage Current
I
GSS
V
GS
=±30V, V
DS
=0V
- -
±100
nA
Drain-Source ON Resistance
R
DS(ON)
VGS=10V, ID=4.75A
- 345 400
mΩ
Forward Transconductance
g
FS
VDS=40V, ID=4.75A (Note4)
- 6.7 - S
Dynamic
Total Gate Charge
Q
g
VDS=160V, ID=9.5A
V
GS
=10V (Note4, 5)
- 18.5 23
nCGate-Source Charge
Q
gs
- 2.7 -
Gate-Drain Charge
Q
gd
- 9 -
Turn-on Delay time
t
d(on)
VDD=100V, R
G
=25Ω
ID=9.5A (Note4, 5)
- 11 32
ns
Turn-on Rise time
t
r
- 62 135
Turn-off Delay time
t
d(off)
- 46 102
Turn-off Fall time
t
f
- 80 170
Input Capacitance
C
iss
VDS=25V, VGS=0V, f=1.0MHz
- 387 503
pF
Output Capacitance
C
oss
- 96 125
Reverse Transfer Capacitance
C
rss
- 34 45
Source-Drain Diode Ratings
Continuous Source Current
I
S
VGS<V
th
- - 9.5
A
Pulsed Source Current
I
SP
- - 38
Diode Forward Voltage
V
SD
IS=9.5A, VGS=0V
- - 1.5 V
Reverse Recovery Time
t
rr
IS=9.5A, VGS=0V,
dIs/dt=100A/
μs (Note 4)
- 130 - ns
Reverse Recovery Charge
Q
rr
- 0.6 -
μC
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