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SEMICONDUCTOR
TECHNICAL DATA
KHB8D8N25P/F/F2
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
Revision No : 0
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC Converters
and switching mode power supplies.
FEATURES
·V
DSS
= 250V, ID= 8.8A
·Drain-Source ON Resistance :
R
DS(ON)
=450mΩ @V
GS
= 10V
·Qg(typ.) = 29.5nC
MAXIMUM RATING (Ta=25℃)
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
KHB8D8N25F
KHB8D8N25F2
KHB8D8N25P
CHARACTERISTIC SYMBOL
RATING
UNIT
KHB8D8N25P
KHB8D8N25F
KHB8D8N25F2
Drain-Source Voltage
V
DSS
250 V
Gate-Source Voltage
V
GSS
±30
V
Drain Current
@T
C
=25℃
I
D
8.8 8.8*
A
Pulsed (Note1)
I
DP
35.2 35.2*
Single Pulsed Avalanche Energy
(Note 2)
E
AS
285
mJ
Repetitive Avalanche Energy
(Note 1)
E
AR
7.4
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt 5.5
V/ns
Drain Power
Dissipation
Ta=25
℃
P
D
74 38 W
Derate above 25
℃
0.59 0.3
W/℃
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Thermal Characteristics
Thermal Resistance, Junction-to-Case
R
thJC
1.69 3.29
℃/W
Thermal Resistance, Junction-toAmbient
R
thJA
62.5 62.5
℃/W
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KHB8D8N25P/F/F2
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250μA, V
GS
=0V
250 - - V
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
jID
=250μA, Referenced to 25℃
- 0.27 -
V/
℃
Gate Threshold Voltage
V
th
VDS=VGS, I
D
=250μA
2.0 - 4.0 V
Drain Cut-off Current
I
DSS
VDS=250V, VGS=0V,
--10
μA
Gate Leakage Current
I
GSS
V
GS
=±30V, V
DS
=0V
--
±100
nA
Drain-Source ON Resistance
R
DS(ON)
VGS=10V, ID=4.4A
- 360 450
m
Ω
Forward Transconductance
g
FS
VDS=40V, ID=4.4A (Note4)
- 7.6 - S
Dynamic
Total Gate Charge
Q
g
VDS=200V, ID=8.8A
V
GS
=10V (Note4,5)
- 29.5 36.5
nCGate-Source Charge
Q
gs
- 3.8 -
Gate-Drain Charge
Q
gd
- 14.5 -
Turn-on Delay time
t
d(on)
VDD=125V
R
G
=25Ω
ID=8.8A (Note4,5)
- 14.5 39
ns
Turn-on Rise time
t
r
- 69 148
Turn-off Delay time
t
d(off)
- 73 156
Turn-off Fall time
t
f
- 60 130
Input Capacitance
C
iss
VDS=25V, VGS=0V, f=1.0MHz
- 622 810
pF
Output Capacitance
C
oss
- 117 152
Reverse Transfer Capacitance
C
rss
-3748
Source-Drain Diode Ratings
Continuous Source Current
I
S
VGS<V
th
- - 8.8
A
Pulsed Source Current
I
SP
- - 35.2
Diode Forward Voltage
V
SD
IS=8.8A, VGS=0V
- - 1.5 V
Reverse Recovery Time
t
rr
IS=8.8A, VGS=0V,
dIs/dt=100A/
μs
- 170 - ns
Reverse Recovery Charge
Q
rr
- 0.91 -
μC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L = 5.9mH, I
S
=8.8A, VDD=50V, R
G
= 25Ω, Starting Tj= 25℃.
Note 3) I
S
≤ 8.8A, dI/dt ≤ 300A/㎲, VDD≤ BV
DSS
, Starting T
j
= 25℃.
Note 4) Pulse Test : Pulse width
≤ 300㎲, Duty Cycle ≤ 2%.
Note 5) Essentially independent of operating temperature.
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