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2007. 5. 10 1/7
SEMICONDUCTOR
TECHNICAL DATA
KHB6D0N40P/F/F2
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
Revision No : 0
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
·V
DSS
=400V, ID=6.0A
·Drain-Source ON Resistance :
R
DS(ON)
=1.0Ω @V
GS
=10V
·Qg(typ.)=21nC
MAXIMUM RATING (Tc=25℃)
* : Drain current limited by maximum junction temperature.
CHARACTERISTIC
SYMBOL
RATING
UNIT
KHB6D0N40P
KHB6D0N40F
KHB6D0N40F2
Drain-Source Voltage
V
DSS
400 V
Gate-Source Voltage
V
GSS
±30
V
Drain Current
@T
C
=25℃
I
D
6.0 6.0*
A
@T
C
=100℃
3.6 3.6*
Pulsed (Note1)
I
DP
24 24*
Single Pulsed Avalanche Energy
(Note 2)
E
AS
320
mJ
Repetitive Avalanche Energy
(Note 1)
E
AR
7.4
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt 4.5
V/ns
Drain Power
Dissipation
Tc=25
℃
P
D
73 38 W
Derate above 25
℃
0.59 0.3
W/
℃
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Thermal Characteristics
Thermal Resistance, Junction-to-Case
R
thJC
1.71 3.31
℃/W
Thermal Resistance, Case-to-Sink
R
thCS
0.5 -
℃/W
Thermal Resistance, Junction-toAmbient
R
thJA
62.5 62.5
℃/W
DIM MILLIMETERS
TO-220AB
1.46
A
B
C
D
E
F
G
H
J
K
M
N
O
0.8 0.1
+
_
2.8 0.1
+
_
2.54 0.2
+
_
1.27 0.1
+
_
1.4 0.1
+
_
13.08 0.3
+
_
3.6 0.2
+
_
+
_
9.9 0.2
+
_
9.2 0.2
+
_
4.5 0.2
+
_
2.4 0.2
15.95 MAX
1.3+0.1/-0.05
0.5+0.1/-0.05
3.7
1.5
A
F
B
J
G
K
M
L
L
E
I
I
O
C
H
NN
Q
D
Q
P
P
1. GATE
2. DRAIN
3. SOURCE
123
PIN CONNECTION
KHB6D0N40P
KHB6D0N40F
KHB6D0N40F2
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KHB6D0N40P/F/F2
Revision No : 0
ELECTRICAL CHARACTERISTICS (Tc=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250μA, V
GS
=0V
400 - - V
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
jID
=250μA, Referenced to 25℃
- 0.54 -
V/
℃
Drain Cut-off Current
I
DSS
VDS=400V, VGS=0V,
--10
μA
Gate Threshold Voltage
V
th
VDS=VGS, I
D
=250μA
2.0 - 4.0 V
Gate Leakage Current
I
GSS
V
GS
=±30V, V
DS
=0V
--
±100
nA
Drain-Source ON Resistance
R
DS(ON)
VGS=10V, ID=3A
- 0.9 1
Ω
Dynamic
Total Gate Charge
Q
g
VDS=320V, ID=6A
V
GS
=10V (Note4,5)
-2125
nCGate-Source Charge
Q
gs
- 3.6 4.4
Gate-Drain Charge
Q
gd
- 8.3 13
Turn-on Delay time
t
d(on)
VDD=200V
R
L
=33Ω
R
G
=25Ω (Note4,5)
--40
ns
Turn-on Rise time
t
r
--50
Turn-off Delay time
t
d(off)
- - 200
Turn-off Fall time
t
f
--70
Input Capacitance
C
iss
VDS=25V, VGS=0V, f=1.0MHz
- 822 1020
pFReverse Transfer Capacitance
C
rss
-1417
Output Capacitance
C
oss
- 97 120
Source-Drain Diode Ratings
Continuous Source Current
I
S
VGS<V
th
--6
A
Pulsed Source Current
I
SP
--24
Diode Forward Voltage
V
SD
IS=6A, VGS=0V
- - 1.5 V
Reverse Recovery Time
t
rr
IS=6A, VGS=0V,
dIs/dt=100A/
μs
- 270 - ns
Reverse Recovery Charge
Q
rr
- 2.15 -
μC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =20.1mH, I
S
=6A, VDD=50V, R
G
=25Ω, Starting Tj=25℃.
Note 3) I
S
≤6A, dI/dt≤100A/㎲, VDD≤BV
DSS
, Starting T
j
=25℃.
Note 4) Pulse Test : Pulse width
≤ 300㎲, Duty Cycle ≤ 2%.
Note 5) Essentially independent of operating temperature.
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