Datasheet khb4d5n60p_f_f2 Datasheet

2010. 10. 27 1/7

SEMICONDUCTOR

TECHNICAL DATA

KHB4D5N60P/F/F2

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

Revision No : 1

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for switching mode

power supplies.

FEATURES

·V

DSS(Min.)

= 600V, ID= 4.5A

·

Drain-Source ON Resistance :

R

DS(ON)

=2.5Ω @V

GS

=10V

·

Qg(typ.) =17nC

MAXIMUM RATING (Tc=25℃)

* : Drain current limited by maximum junction temperature.

CHARACTERISTIC SYMBOL

RATING

UNIT

KHB4D5N60P

KHB4D5N60F

KHB4D5N60F2

Drain-Source Voltage

V

DSS

600 V

Gate-Source Voltage

V

GSS

±30

V

Drain Current

@T

C

=25℃

I

D

4.5 4.5*

A

@T

C

=100℃

2.8 2.8*

Pulsed (Note1)

I

DP

18 18*

Single Pulsed Avalanche Energy (Note 2)

E

AS

260

mJ

Repetitive Avalanche Energy (Note 1)

E

AR

10.6

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt 4.5

V/ns

Drain Power Dissipation

Tc=25℃

P

D

106 36 W

Derate above25℃

0.85 0.29

W/℃

Maximum Junction Temperature

T

j

150

℃

Storage Temperature Range

T

stg

-55～150

℃

Thermal Characteristics

Thermal Resistance, Junction-to-Case

R

thJC

1.18 3.47

℃/W

Thermal Resistance, Case-to-Sink

R

thCS

0.5 -

℃/W

Thermal Resistance, Junction-toAmbient

R

thJA

62.5 62.5

℃/W

DIM MILLIMETERS

TO-220AB

1.46

A

B

C

D

E

F

G

H

J

K

M

N

O

0.8 0.1

+

_

2.8 0.1

+

_

2.54 0.2

+

_

1.27 0.1

+

_

1.4 0.1

+

_

13.08 0.3

+

_

3.6 0.2

+

_

+

_

9.9 0.2

+

_

9.2 0.2

+

_

4.5 0.2

+

_

2.4 0.2

15.95 MAX

1.3+0.1/-0.05

0.5+0.1/-0.05

3.7

1.5

A

F

B

J

G

K

M

L

E

I

O

C

H

NN

Q

D

Q

P

1. GATE

2. DRAIN

3. SOURCE

123

PIN CONNECTION

DIM

MILLIMETERS

TO-220IS

0.76+0.09/-0.05

A

B

C

D

E

F

G

0.5+0.1/-0.05

H

1.2+0.25/-0.1

1.5+0.25/-0.1

J

K

L

M

N

P

Q

R

F

Q

1

2

3

L

P

N

B

G

J

M

D

N

H

E

R

K

L

S

0.5 Typ

S

D

A

C

1. GATE

2. DRAIN

3. SOURCE

10.0 0.3

+

_

15.0 0.3

+

_

2.70 0.3

+

_

Φ3.2 0.2

+

_

3.0 0.3

+

_

12.0 0.3

+

_

13.6 0.5

+

_

3.7 0.2

+

_

2.54 0.1

+

_

6.8 0.1

+

_

4.5 0.2

+

_

2.6 0.2

+

_

KHB4D5N60P

KHB4D5N60F

KHB4D5N60F2

G

D

S

E

K

L

D

Q

A

M

NN

123

B

J

1. GATE

2. DRAIN

3. SOURCE

C

O

R

H

F

G

TO-220IS (1)

DIM

A

B

C

D

E

F

G

H

J

K

L

M

N

O

Q

R

MILLIMETERS

_

10.16 0.2

+ _

15.87 0.2

+

_

2.54 0.2

+

_

0.8 0.1

+

_

3.18 0.1

+

_

3.3 0.1

+

_

12.57 0.2

+

_

0.5 0.1

+

13.0 MAX

_

3.23 0.1

+

1.47 MAX

_

2.54 0.2

+ _

6.68 0.2

+ _

+

4.7 0.2

_

2.76 0.2

+

2010. 10. 27 2/7

KHB4D5N60P/F/F2

Revision No : 1

ELECTRICAL CHARACTERISTICS (Tc=25℃)

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 2) L = 25mH, I

S

=4.5A, VDD=50V, R

G

= 25Ω, Starting Tj= 25℃.

Note 3) I

S

≤4.5A, dI/dt≤200A/㎲, VDD≤BV

DSS

, Starting T

j

= 25℃.

Note 4) Pulse Test : Pulse width ≤

300㎲, Duty Cycle ≤ 2%.

Note 5) Essentially independent of operating temperature.

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage

BV

DSS

I

D

=250μA, V

GS

=0V

600 - - V

Breakdown Voltage Temperature Coefficient

ΔBV

DSS

/ΔT

jID

=250μA, Referenced to 25℃

- 0.6 -

V/℃

Drain Cut-off Current

I

DSS

VDS=600V, VGS=0V,

- - 10

μA

Gate Threshold Voltage

V

th

VDS=VGS, I

D

=250μA

2 - 4 V

Gate Leakage Current

I

GSS

V

GS

=±30V, V

DS

=0V

- -

±100

nA

Drain-Source ON Resistance

R

DS(ON)

VGS=10V, ID=2.25A

- 2.2 2.5

Ω

Dynamic

Total Gate Charge

Q

g

VDS=480V, ID=4.5A

V

GS

=10V (Note4,5)

- 17 21

nCGate-Source Charge

Q

gs

- 3 -

Gate-Drain Charge

Q

gd

- 7.3 -

Turn-on Delay time

t

d(on)

VDD=300V

R

L

=67Ω

R

G

=25Ω (Note4,5)

- 15 35

ns

Turn-on Rise time

t

r

- 35 80

Turn-off Delay time

t

d(off)

- 70 150

Turn-off Fall time

t

f

- 80 170

Input Capacitance

C

iss

VDS=25V, VGS=0V, f=1.0MHz

- 655 850

pF

Output Capacitance

C

oss

- 66 86

Reverse Transfer Capacitance

C

rss

- 8 11

Source-Drain Diode Ratings

Continuous Source Current

I

S

VGS<V

th

- - 4.5 A

Pulsed Source Current

I

SP

- - 18

Diode Forward Voltage

V

SD

IS=4.5A, VGS=0V

- - 1.5 V

Reverse Recovery Time

t

rr

IS=4.5A, VGS=0V,

dIs/dt=100A/μ

s

- 350 - ns

Reverse Recovery Charge

Q

rr

- 2.7 -

μC

2010. 10. 27 3/7

KHB4D5N60P/F/F2

Revision No : 1

Fig1. ID - V

1

10

VGS

TOP : 15.0 V

10.0 V

8.0 V

D

0

10

-1

10

DSS

1.2

1.1

1.0

0.9

0.8

-100 -50

7.0 V

6.0 V

Bottom : 5.5 V

-1

0

10

Drain - Source Voltage VDS (V)

Fig3. BV

VGS = 0V

= 250µA

I

DS

050

DSS

(A)

Drain Current I

Normalized Breakdown Voltage BV

DS

- T

(A)

D

Fig2. ID - V

1

10

150 C

0

10

25

C

GS

-55

C

Drain Current I

-1

1

10

684102

Gate - Source Voltage VGS (V)

j

Fig4. R

6

5

(Ω)

4

DS(ON)

3

2

1

DS(ON)

V

= 10V

G

- I

D

V

= 20V

G

On - Resistance R

100

150

0

064281210

Junction Temperature Tj ( )

Fig5. IS - V

1

10

(A)

S

0

10

C

25

150

C

Reverse Drain Current I

-1

10

0.2 0.4 0.8 1.0 1.41.2 1.81.60.6

Source - Drain Voltage V

SD

C

(V)

Drain Current I

Fig6. R

3.0

V

=10V

GS

= 2.25A

I

DS

2.5

2.0

1.5

1.0

0.5

Normalized On Resistance

0.0

Junction Temperture Tj ( )

(A)

D

- T

DS(ON)

j

0 50-100 -50 100 150

C

2010. 10. 27 4/7

KHB4D5N60P/F/F2

Revision No : 1

4

10

3

10

2

10

Capacitance (pF)

1

10

0

10

-1

10

2

10

1

(A)

10

D

0

10

Drain Current I

10

Tc= 25 T Single nonrepetitive pulse

-1 0

10

Fig7. C - V

0

10

Drain - Source Voltage V

DS

10

C

1

DS

Fig9. Safe Operation Area

(KHB4D5N60P)

Operation in this

= 150

j

C

area is limited by R

1

10

DC

10

DS(ON)

10ms

2

Fig8. Qg- V

GS

12

V

= 120V

10

iss

(V)

GS

8

oss

rss

6

4

DS

V

= 300V

DS

V

= 480V

DS

2

Gate - Source Voltage V

0

5

Gate - Charge

10

Qg (nC)

15

20

(V)

2

10

Fig10. Safe Operation Area

(KHB4D5N60F,KHB4D5N60F2)

Operation in this

C

area is limited by R

1

10

DS(ON)

100 ms

DC

10

10 ms

2

1 ms

100µs

3

10

1ms

100µs

1ms

10ms

DC

2

10

1

10

(A)

D

0

10

-1

10

Drain Current I

3

10

Tc= 25 T

= 150

j

Single nonrepetitive pulse

-2

10

0

10

3.0

2.5

(A)

2.0

D

1.5

1.0

Drain Current I

0.5

0.0 25

Drain - Source Voltage V

Fig11. ID - T

50

75

DS

j

100

Junction Temperature Tj ( )

(V)

C

Drain - Source Voltage V

DS

(V)

150125

2010. 10. 27 5/7

KHB4D5N60P/F/F2

Revision No : 1

Fig12. Transient Thermal Response Curve

0

10

Duty=0.5

0.2

-1

10

0.1

0.05

0.02

0.01

-2

10

-5

10

Normalized Transient Thermal Resistance

Single Pulse

-4

10

-3

-2

10

TIME (sec)

P

DM

- Duty Factor, D= t1/t

-1

10

t

1

t

2

0

10

1

10

Fig13. Transient Thermal Response Curve

0

10

Duty=0.5

0.2

-1

10

0.1

0.05

0.02

0.01

-2

10

-5

10

Normalized Transient Thermal Resistance

Single Pul

-4

10

se

10

-3

-2

10

TIME (sec)

P

DM

- Duty Factor, D= t1/t

-1

10

t

1

t

2

0

10

1

10

2010. 10. 27 6/7

KHB4D5N60P/F/F2

Revision No : 1

Fig14. Gate Charge

I

D

0.8 V

DSS

1.0 mA

V

Fig15. Single Pulsed Avalanche Energy

Fast Recovery Diode

GS

V

GS

10 V

I

D

V

DS

BV

DSS

Q

gs

1

EAS= LI

2

Q

gd

2

AS

BV

DSS

Q

DSS

- V

g

DD

Q

0.5 V

DSS

10 V

25Ω

L

V

DS

V

GS

I

AS

I

(t)

D

V

DD

VDS(t)

Time

t

p

2010. 10. 27 7/7

KHB4D5N60P/F/F2

Revision No : 1

Fig16. Resistive Load Switching

0.5 V

DSS

V

DS

R

L

90%

10V

25 Ω

V

GS

V

Fig17. Source - Drain Diode Reverse Recovery and dv /dt

DUT

V

I

F

I

0.8 x V

DSS

10V

driver

V

GS

S

DS

V

GS

I

SD

(DUT)

V

DS

(DUT)

10%

t

r

d(on)

t

on

Body Diode Forword Current

V

SD

t

f

t

d(off)

t

off

di/dt

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

DD

Body Diode Forword Voltage drop