Datasheet khb4d0n65p_f_f2 Datasheet

2007. 5. 10 1/1

SEMICONDUCTOR

TECHNICAL DATA

KHB4D0N65P/F/F2

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

Revision No : 0

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for switch mode power

supplies.

FEATURES

V

DSS

=650V, ID=4A

Drain-Source ON Resistance

: R

DS(ON)

=3.0 @VGS= 10V

Qg(typ.)=20nC

MAXIMUM RATING (Tc=25 )

* : Drain current limited by maximum junction temperature.

CHARACTERISTIC

SYMBOL

RATING

UNIT

KHB4D0N65P

KHB4D0N65F

KHB4D0N65F2

Drain-Source Voltage

V

DSS

650 V

Gate-Source Voltage

V

GSS

30

V

Drain Current

@TC=25

I

D

4.0 4.0* A

Pulsed (Note1)

I

DP

16 16*

Single Pulsed Avalanche Energy (Note 2)

E

AS

260

mJ

Repetitive Avalanche Energy (Note 1)

E

AR

10.6

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt 4.5

V/ns

Drain Power Dissipation

Tc=25

P

D

106 36 W

Derate above25

0.85 0.29

W/

Maximum Junction Temperature

T

j

150

Storage Temperature Range

T

stg

-55 150

Thermal Characteristics

Thermal Resistance, Junction-to-Case

R

thJC

1.18 3.47

/W

Thermal Resistance, Junction-toAmbient

R

thJA

62.5 62.5

/W

DIM MILLIMETERS

TO-220AB

1.46

A

B

C

D

E

F

G

H

J

K

M

N

O

0.8 0.1

+

_

2.8 0.1

+

_

2.54 0.2

+

_

1.27 0.1

+

_

1.4 0.1

+

_

13.08 0.3

+

_

3.6 0.2

+

_

+

_

9.9 0.2

+

_

9.2 0.2

+

_

4.5 0.2

+

_

2.4 0.2

15.95 MAX

1.3+0.1/-0.05

0.5+0.1/-0.05

3.7

1.5

A

F

B

J

G

K

M

L

E

I

O

C

H

NN

Q

D

Q

P

1. GATE

2. DRAIN

3. SOURCE

123

PIN CONNECTION

DIM

MILLIMETERS

TO-220IS

0.76+0.09/-0.05

A

B

C

D

E

F

G

0.5+0.1/-0.05

H

1.2+0.25/-0.1

1.5+0.25/-0.1

J

K

L

M

N

P

Q

R

F

Q

1

2

3

L

P

N

B

G

J

M

D

N

H

E

R

K

L

S

0.5 Typ

S

D

A

C

1. GATE

2. DRAIN

3. SOURCE

10.0 0.3

+

_

15.0 0.3

+

_

2.70 0.3

+

_

Φ3.2 0.2

+

_

3.0 0.3

+

_

12.0 0.3

+

_

13.6 0.5

+

_

3.7 0.2

+

_

2.54 0.1

+

_

6.8 0.1

+

_

4.5 0.2

+

_

2.6 0.2

+

_

KHB4D0N65F

KHB4D0N65F2

KHB4D0N65P

E

K

L

D

Q

A

F

G

M

NN

123

TO-220IS (1)

G

D

S

B

J

1. GATE

2. DRAIN

3. SOURCE

C

O

DIM

MILLIMETERS

_

10.16 0.2

A

+ _

15.87 0.2

B

+

_

2.54 0.2

C

+

_

0.8 0.1

D

+

_

E

3.18 0.1

+

_

3.3 0.1

F

+

_

12.57 0.2

G

+

_

H

0.5 0.1

K

L

M

N

O

Q

R

J

+

13.0 MAX

_

3.23 0.1

+

1.47 MAX

_

2.54 0.2

+ _

6.68 0.2

+ _

+

4.7 0.2

_

2.76 0.2

+

R

H

2007. 5. 10 2/7

KHB4D0N65P/F/F2

Revision No : 0

ELECTRICAL CHARACTERISTICS (Tc=25 )

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage

BV

DSS

ID=250 A, VGS=0V

650 - - V

Breakdown Voltage Temperature Coefficient

BV

DSS

/ TjID=250 A, Referenced to 25

- 0.95 -

V/

Gate Threshold Voltage

V

th

VDS=VGS, ID=250 A

2.0 - 4.0 V

Drain Cut-off Current

I

DSS

VDS=650V, VGS=0V,

- - 10

A

Gate Leakage Current

I

GSS

VGS= 30V, VDS=0V

- -

100

nA

Drain-Source ON Resistance

R

DS(ON)

VGS=10V, ID=2.0A

- 2.4 3.0

Forward Transconductance

g

FS

VDS=50V, ID=2.0A (Note4)

- 3.8 - S

Dynamic

Total Gate Charge

Q

g

VDS=520V, ID=4.0A

V

GS

=10V (Note4, 5)

- 20 25

nCGate-Source Charge

Q

gs

- 4.0 -

Gate-Drain Charge

Q

gd

- 7.5 -

Turn-on Delay time

t

d(on)

VDD=325V, RG=25

ID=4.0A (Note4, 5)

- 29.5 69

ns

Turn-on Rise time

t

r

- 63.4 136.7

Turn-off Delay time

t

d(off)

- 63.2 136.4

Turn-off Fall time

t

f

- 30 70

Input Capacitance

C

iss

VDS=25V, VGS=0V, f=1.0MHz

- 645 838

pF

Output Capacitance

C

oss

- 60 78

Reverse Transfer Capacitance

C

rss

- 7.4 9.6

Source-Drain Diode Ratings

Continuous Source Current

I

S

VGS<V

th

- - 4.0 A

Pulsed Source Current

I

SP

- - 16

Diode Forward Voltage

V

SD

IS=4.0A, VGS=0V

- - 1.4 V

Reverse Recovery Time

t

rr

IS=4.0A, VGS=0V,

dIs/dt=100A/

s (Note 4)

- 350 - ns

Reverse Recovery Charge

Q

rr

- 2.7 -

C

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 2) L =30mH, I

S

=4A, VDD=50V, RG=25 , Starting Tj=25 .

Note 3) I

S

4.0A, dI/dt 200A/ , VDDBV

DSS

, Starting Tj=25 .

Note 4) Pulse Test : Pulse width

300 , Duty Cycle 2%.

Note 5) Essentially independent of operating temperature.

2007. 5. 10 3/7

KHB4D0N65P/F/F2

Revision No : 0

1

10

VGS

TOP : 15.0 V

10.0 V

8.0 V

7.0 V

Bottom: 5.5V

0

-1

10

6.5 V

6.0 V

VGS = 0V

= 250µA

I

DS

(A)

D

10

Drain Current I

10

1.2

DSS

1.1

Fig1. ID - V

0

10

DS

1

10

Drain - Source Voltage VDS (V)

Fig4. BV

DSS

- T

j

1

10

VDS = 50V 250µs Pulse Test

(A)

D

0

10

Drain Current I

-1

10

6

5

(Ω)

4

DS(ON)

150

Fig2. ID - V

C

GS

25

C

-55

C

684102

Gate - Source Voltage VGS (V)

Fig3. R

VGS = 10V

DS(ON)

- I

D

1.0

0.9

0.8

Normalized Breakdown Voltage BV

-100 -50

050

Junction Temperature Tj ( )

Fig5. IS - V

1

10

(A)

S

0

10

150

C

25

C

Reverse Drain Current I

-1

10

0.2 0.4 0.8 1.0 1.20.6 1.4 1.81.6

100

C

SD

VGS = 0V 250µs Pulse Test

150

3

2

1

On - Resistance R

0

246810

Drain Current I

Fig6. R

3.0

V

= 10V

GS

ID = 2.0A

2.5

2.0

1.5

1.0

0.5

Normalized On Resistance

0.0 0

VGS = 20V

(A)

D

- T

DS(ON)

j

50-100 -50 100 150

Source - Drain Voltage V

SD

(V)

Junction Temperture Tj ( )

C

2007. 5. 10 4/7

KHB4D0N65P/F/F2

Revision No : 0

3

10

1

10

Capacitance (pF)

-1

10

-1

10

1

(A)

10

D

0

10

Drain Current I

10

Tc= 25 T

j

Single nonrepetitive pulse

-1 0

10

Fig7. C - V

0

10

DS

Drain - Source Voltage V

Fig9. Safe Operation Area

Operation in this area

= 150

C

is limited by R

1

10

DS(ON)

1

10

(V)

DS

(KHB4D0N65P)

100µs

1ms

10ms

DC

2

10

Fig8. Qg- V

12

ID = 4.0A

V

= 130V

10

C

iss

(V)

GS

8

C

oss

C

rss

6

4

DS

V

= 325V

DS

V

= 520V

DS

GS

2

Gate - Source Voltage V

2

10

0

G

ate - Charge

10 200155

Q

(nC)

g

Fig10. Safe Operation Area

(KHB4D0N65F, KHB4D0N65F2)

Operation in this area is limited by R

1

10

(A)

D

0

10

-1

10

Drain Current I

3

10

C

Tc= 25

C

T

= 150

j

Single nonrepetitive pulse

-2 0

10

1

10

DS(ON)

DC

100ms

10

10ms

2

1ms

100µs

3

10

4

3

(A)

D

2

1

Drain Current I

0

25

Drain - Source Voltage V

50

Fig11. ID - T

75

j

100

Junction Temperature T

DS

j

(V)

( )

C

Drain - Source Voltage V

DS

(V)

150125

2007. 5. 10 5/7

KHB4D0N65P/F/F2

Revision No : 0

Fig12. Transient Thermal Response Curve

0

10

Duty=0.5

0.2

-1

10

0.1

0.05

0.02

0.01

-2

10

-5

10

Normalized Transient Thermal Resistance

Single Pulse

-4

10

-3

10

-2

10

TIME (sec)

P

DM

- Duty Factor, D= t1/t

-1

10

t

1

t

2

0

10

1

10

Fig13. Transient Thermal Response Curve

0

10

Duty=0.5

0.2

-1

10

0.1

0.05

0.02

0.01

-2

10

-5

10

Normalized Transient Thermal Resistance

Single Pul

-4

10

se

-3

10

-2

10

TIME (sec)

P

DM

- Duty Factor, D= t1/t

-1

10

t

1

t

2

0

10

1

10

2007. 5. 10 6/7

KHB4D0N65P/F/F2

Revision No : 0

Fig14. Gate Charge

I

D

0.8 V

DSS

1.0 mA

V

Fig15. Single Pulsed Avalanche Energy

Fast Recovery Diode

GS

V

GS

10 V

I

D

V

DS

BV

DSS

Q

gs

1

EAS= LI

2

Q

gd

2

AS

BV

DSS

Q

DSS

- V

g

DD

Q

0.5 V

DSS

10 V

25Ω

L

V

DS

V

GS

I

AS

I

(t)

D

V

DD

VDS(t)

Time

t

p

2007. 5. 10 7/7

KHB4D0N65P/F/F2

Revision No : 0

Fig16. Resistive Load Switching

0.5 V

DSS

V

DS

R

L

90%

10V

25 Ω

V

GS

V

Fig17. Source - Drain Diode Reverse Recovery and dv /dt

DUT

V

I

F

I

0.8 x V

DSS

10V

driver

V

GS

S

DS

V

GS

I

SD

(DUT)

V

DS

(DUT)

10%

t

d(on)

r

t

on

Body Diode Forword Current

V

SD

t

f

t

d(off)

t

off

di/dt

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

DD

Body Diode Forword Voltage drop