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SEMICONDUCTOR
TECHNICAL DATA
KHB3D0N70P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
Revision No : 2
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for switch mode power
supplies.
FEATURES
·V
DSS
= 700V, ID= 3A
·Drain-Source ON Resistance
: R
DS(ON)
= 3.5Ω @V
GS
= 10V
·Qg(typ.) = 20.5nC
MAXIMUM RATING (Tc=25℃)
* : Drain current limited by maximum junction temperature.
CHARACTERISTIC
SYMBOL
RATING
UNIT
KHB3D0N70P KHB3D0N70F
Drain-Source Voltage
V
DSS
700 V
Gate-Source Voltage
V
GSS
±30
V
Drain Current
@T
C
=25℃
I
D
3.0 3.0*
A
Pulsed (Note1)
I
DP
12 12*
Single Pulsed Avalanche Energy
(Note 2)
E
AS
345
mJ
Repetitive Avalanche Energy
(Note 1)
E
AR
8.0
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt 4.0
V/ns
Drain Power
Dissipation
Tc=25
℃
P
D
113 50 W
Derate above25℃
0.91 0.34
W/℃
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Thermal Characteristics
Thermal Resistance, Junction-to-Case
R
thJC
1.1 2.5
℃/W
Thermal Resistance, Junction-toAmbient
R
thJA
62.5 62.5
℃/W
E
P
K
L
D
N
A
MM
123
KHB3D0N70F
F
G
O
B
J
H
1. GATE
2. DRAIN
3. SOURCE
TO-220IS
D
C
DIM
MILLIMETERS
_
+
10.16 0.2
A
_
+
15.87 0.2
B
_
C
+
2.54 0.2
_
+
D
0.8 0.1
_
E
+
3.18 0.1
_
F
+
3.3 0.1
_
+
12.57 0.2
G
_
+
0.5 0.1
H
Q
J
13.0 MAX
_
K
+
3.23 0.1
L
1.47 MAX
_
+
2.54 0.2
M
_
N
+
4.7 0.2
_
O
+
6.68 0.2
P
6.5
_
Q
+
2.76 0.2
G
S
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KHB3D0N70P/F
Revision No : 2
ELECTRICAL CHARACTERISTICS (Tc=25℃)
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =71mH, I
S
=3.0A, VDD=50V, R
G
=25Ω, Starting Tj=25℃.
Note 3) I
S
≤3.0A, dI/dt≤200A/㎲, VDD≤BV
DSS
, Starting T
j
=25℃.
Note 4) Pulse Test : Pulse width
≤ 300㎲, Duty Cycle ≤ 2%.
Note 5) Essentially independent of operating temperature.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250μA, V
GS
=0V
700 - - V
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
jID
=250μA, Referenced to 25℃
-1-
V/
℃
Gate Threshold Voltage
V
th
VDS=VGS, I
D
=250μA
2.0 - 4.0 V
Drain Cut-off Current
I
DSS
VDS=700V, VGS=0V,
--10
μA
Gate Leakage Current
I
GSS
V
GS
=±30V, V
DS
=0V
--
±100
nA
Drain-Source ON Resistance
R
DS(ON)
VGS=10V, ID=1.5A
- 3.0 3.5
Ω
Dynamic
Total Gate Charge
Q
g
VDS=560V, ID=3.0A
V
GS
=10V (Note4, 5)
- 20.5 25.6
nCGate-Source Charge
Q
gs
-3-
Gate-Drain Charge
Q
gd
- 10.5 -
Turn-on Delay time
t
d(on)
VDD=350V, R
G
=25Ω
ID=3.0A (Note4, 5)
- 11.5 33
ns
Turn-on Rise time
t
r
- 48.5 107
Turn-off Delay time
t
d(off)
- 50 110
Turn-off Fall time
t
f
- 57.5 125
Input Capacitance
C
iss
VDS=25V, VGS=0V, f=1.0MHz
- 642 835
pF
Output Capacitance
C
oss
- 67.2 87.4
Reverse Transfer Capacitance
C
rss
- 10.2 13.3
Source-Drain Diode Ratings
Continuous Source Current
I
S
VGS<V
th
- - 3.0
A
Pulsed Source Current
I
SP
--12
Diode Forward Voltage
V
SD
IS=3.0A, VGS=0V
- - 1.6 V
Reverse Recovery Time
t
rr
IS=3.0A, VDD=350V,
dIs/dt=100A/
μs (Note 4)
- 730 - ns
Reverse Recovery Charge
Q
rr
- 3.2 -
μC
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