Datasheet khb2d0n60p_f_f2 Datasheet

2010. 5. 7 1/7

SEMICONDUCTOR

TECHNICAL DATA

KHB2D0N60P/F/F2

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

Revision No : 2

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for switching mode

power supplies.

FEATURES

·V

DSS

= 600V, ID= 2.0A

·Drain-Source ON Resistance :

R

DS(ON)

=5.0Ω @V

GS

= 10V

·Qg(typ.) = 10.9nC

MAXIMUM RATING (Tc=25℃)

* : Drain current limited by maximum junction temperature.

CHARACTERISTIC SYMBOL

RATING

UNIT

KHB2D0N60P

KHB2D0N60F

KHB2D0N60F2

Drain-Source Voltage

V

DSS

600 V

Gate-Source Voltage

V

GSS

±30

V

Drain Current

@T

C

=25℃

I

D

2.0 2.0*

A

@T

C

=100℃

1.2 1.2*

Pulsed (Note1)

I

DP

8.0 8.0*

Single Pulsed Avalanche Energy (Note 2)

E

AS

120

mJ

Repetitive Avalanche Energy (Note 1)

E

AR

5.4

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt 5.5

V/ns

Drain Power Dissipation

Tc=25℃

P

D

54 23 W

Derate above25℃

0.43 0.18

W/℃

Maximum Junction Temperature

T

j

150

℃

Storage Temperature Range

T

stg

-55～150

℃

Thermal Characteristics

Thermal Resistance, Junction-to-Case

R

thJC

2.32 5.5

℃/W

Thermal Resistance, Case-to-Sink

R

thCS

0.5 -

℃/W

Thermal Resistance, Junction-toAmbient

R

thJA

62.5 62.5

℃/W

DIM MILLIMETERS

TO-220AB

1.46

A

B

C

D

E

F

G

H

J

K

M

N

O

0.8 0.1

+

_

2.8 0.1

+

_

2.54 0.2

+

_

1.27 0.1

+

_

1.4 0.1

+

_

13.08 0.3

+

_

3.6 0.2

+

_

+

_

9.9 0.2

+

_

9.2 0.2

+

_

4.5 0.2

+

_

2.4 0.2

15.95 MAX

1.3+0.1/-0.05

0.5+0.1/-0.05

3.7

1.5

A

F

B

J

G

K

M

L

E

I

O

C

H

NN

Q

D

Q

P

1. GATE

2. DRAIN

3. SOURCE

123

PIN CONNECTION

DIM

MILLIMETERS

TO-220IS

0.76+0.09/-0.05

A

B

C

D

E

F

G

0.5+0.1/-0.05

H

1.2+0.25/-0.1

1.5+0.25/-0.1

J

K

L

M

N

P

Q

R

F

Q

1

2

3

L

P

N

B

G

J

M

D

N

H

E

R

K

L

S

0.5 Typ

S

D

A

C

1. GATE

2. DRAIN

3. SOURCE

10.0 0.3

+

_

15.0 0.3

+

_

2.70 0.3

+

_

Φ3.2 0.2

+

_

3.0 0.3

+

_

12.0 0.3

+

_

13.6 0.5

+

_

3.7 0.2

+

_

2.54 0.1

+

_

6.8 0.1

+

_

4.5 0.2

+

_

2.6 0.2

+

_

KHB2D0N60P

KHB2D0N60F

KHB2D0N60F2

G

D

S

E

K

L

D

Q

A

M

NN

123

B

J

1. GATE

2. DRAIN

3. SOURCE

C

O

R

H

F

G

TO-220IS (1)

DIM

A

B

C

D

E

F

G

H

J

K

L

M

N

O

Q

R

MILLIMETERS

_

10.16 0.2

+ _

15.87 0.2

+

_

2.54 0.2

+

_

0.8 0.1

+

_

3.18 0.1

+

_

3.3 0.1

+

_

12.57 0.2

+

_

0.5 0.1

+

13.0 MAX

_

3.23 0.1

+

1.47 MAX

_

2.54 0.2

+ _

6.68 0.2

+ _

+

4.7 0.2

_

2.76 0.2

+

2010. 5. 7 2/7

KHB2D0N60P/F/F2

Revision No : 2

ELECTRICAL CHARACTERISTICS (Tc=25℃)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage

BV

DSS

I

D

=250μA, V

GS

=0V

600 - - V

Breakdown Voltage Temperature Coefficient

ΔBV

DSS

/ΔT

jID

=250μA, Referenced to 25℃

- 0.65 -

V/℃

Drain Cut-off Current

I

DSS

VDS=600V, VGS=0V,

- - 10

μA

Gate Threshold Voltage

V

th

VDS=VGS, I

D

=250μA

2.0 - 4.0 V

Gate Leakage Current

I

GSS

V

GS

=±30V, V

DS

=0V

- -

±100

nA

Drain-Source ON Resistance

R

DS(ON)

VGS=10V, ID=1.0A

- 3.8 5.0

Ω

Dynamic

Total Gate Charge

Q

g

VDS=480V, ID=2.0A

V

GS

=10V (Note4,5)

- 10.9 12

nCGate-Source Charge

Q

gs

- 1.7 3

Gate-Drain Charge

Q

gd

- 5.0 5.5

Turn-on Delay time

t

d(on)

VDD=300V

R

L

=150Ω

R

G

=25Ω (Note4,5)

- - 28

ns

Turn-on Rise time

t

r

- - 60

Turn-off Delay time

t

d(off)

- - 58

Turn-off Fall time

t

f

- - 66

Input Capacitance

C

iss

VDS=25V, VGS=0V, f=1.0MHz

- 388 504

pFReverse Transfer Capacitance

C

rss

- 6.5 8.5

Output Capacitance

C

oss

- 46 59.4

Source-Drain Diode Ratings

Continuous Source Current

I

S

VGS<V

th

- - 2.0 A

Pulsed Source Current

I

SP

- - 8.0

Diode Forward Voltage

V

SD

IS=2.0A, VGS=0V

- - 1.5 V

Reverse Recovery Time

t

rr

IS=2.0A, VGS=0V,

dIs/dt=100A/μs

- 300 - ns

Reverse Recovery Charge

Q

rr

- 1.55 -

μC

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 2) L = 55mH, I

S

= 2.0A, VDD=50V, R

G

=25Ω, Starting Tj= 25℃.

Note 3) I

S

≤2.0A, dI/dt≤300A/㎲, VDD≤BV

DSS

, Starting T

j

= 25℃.

Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%.

Note 5) Essentially independent of operating temperature.

2010. 5. 7 3/7

KHB2D0N60P/F/F2

Revision No : 2

1

10

V

GS

TOP : 15.0 V

10.0 V

8.0 V

(A)

7.0 V

6.0 V

0

D

5.5 V

10

5.0 V Bottom : 4.5V

-1

10

Drain Current I

-2

10

-1

10

1.2

DSS

1.1

1.0

VGS = 0V

= 250

I

DS

Fig1. ID - V

0

10

DS

1

10

Drain - Source Voltage VDS (V)

Fig3. BV

DSS

- T

j

(A)

D

0

10

150

C

Drain Current I

25

C

-1

10

12

10

(Ω)

8

DS(ON)

6

Fig2. ID - V

-55

GS

C

684102

Gate - Source Voltage VGS (V)

Fig4. R

DS(ON)

V

= 10V

GS

- I

D

V

GS

= 20V

0.9

0.8

Normalized Breakdown Voltage BV

-100 -50

050

Junction Temperature Tj ( )

Fig5. IS - V

1

10

(A)

S

0

10

150

C

25

Reverse Drain Current I

-1

10

0.2 0.4 0.8 1.0 1.2 1.4

C

0.6

SD

C

100

1.6

150

4

2

On - Resistance R

0

024135

2.5

V I

GS

DS

= 10V

= 2.0A

Drain Current I

Fig6. R

DS(ON)

(A)

D

- T

j

2.0

1.5

1.0

0.5

Normalized On Resistance

0.0 0 50-100 -50 100 150

Source - Drain Voltage V

SD

(V)

Junction Temperture Tj ( )

C

2010. 5. 7 4/7

KHB2D0N60P/F/F2

Revision No : 2

700

600

500

400

300

200

Capacitance (pF)

100

0

-1

10

1

10

(A)

D

0

10

-1

10

Drain Current I

Tc= 25

C

T

= 150

j

Single nonrepetitive pulse

-2

10

0

10

Fig7. C - V

C

iss

C

oss

C

rss

0

10

DS

Drain - Source Voltage V

Fig9. Safe Operation Area

Operation in this area is limited by R

C

1

10

Drain - Source Voltage V

DS(ON)

10

Frequency = 1MHz

1

10

(V)

DS

(KHB2D0N60P)

2

(V)

DS

100µs

1ms

10ms

DC

10

(V)

GS

12

10

8

ID=2.0A

Fig8. Qg - V

V

= 120V

DS

V

= 300V

DS

V

= 480V

DS

GS

6

4

2

Gate - Source Voltage V

0

4102860

Gate - Charge

Qg (nC)

Fig10. Safe Operation Area

(KHB2D0N60F,KHB2D0N60F2)

Operation in this

C

area is limited by R

1

10

1

10

(A)

D

0

10

-1

10

Drain Current I

3

Tc= 25

C

T

= 150

j

Single nonrepetitive pulse

-2

10

0

10

Drain - Source Voltage V

DC

100 ms

10

DS(ON)

10 ms

2

100 µs

1

DS

ms

3

10

(V)

Fig11. ID - T

j

2.0

1.6

(A)

D

1.2

0.8

Drain Current I

0.4

0.0 25

50

Junction Temperature Tj ( )

75

100

C

150125

2010. 5. 7 5/7

KHB2D0N60P/F/F2

Revision No : 2

)

Fig12. Transient Thermal Response Curve

0

10

Duty=0.5

0.2

-1

10

0.1

0.05

0.02

0.01

-2

10

-5

10

Normalized Transient Thermal Resistance

Single

P

ulse

-4

10

Fig13. Transient Thermal Response Curve

0

10

Duty=0.5

-3

-2

10

TIME (sec)

P

DM

- Duty Factor, D= t1/t

- Rth j-c= 2.32℃/W

-1

10

(KHB2D0N60P)

t

1

t

2

0

10

(KHB2D0N50F/F2)

1

10

0.2

-1

10

0.1

0.05

0.02

0.01

-2

10

-5

10

Normalized Transient Thermal Resistance

S

ingle Pulse

-4

10

-3

-2

10

TIME (sec

P

DM

- Duty Factor, D= t1/t

- Rth j-c= 5.5℃/W

-1

10

t

1

t

2

0

10

1

10

2010. 5. 7 6/7

KHB2D0N60P/F/F2

Revision No : 2

Fig14. Gate Charge

V

GS

Fast Recovery Diode

0.8 V

DSS

I

D

1.0 mA

V

GS

Fig15. Single Pulsed Avalanche Energy

0.5 V

DSS

10 V

I

D

V

DS

BV

DSS

Q

gs

EAS= LI

Q

gd

1

2

AS

2

BV

DSS

Q

DSS

- V

g

DD

Q

L

I

AS

25Ω

10 V

Fig16. Resistive Load Switching

0.5 V

DSS

25 Ω

10V

I

(t)

V

DS

V

GS

V

DD

D

VDS(t)

Time

t

p

V

DS

90%

R

L

10%

V

GS

t

V

DS

V

GS

t

d(on)

t

r

on

t

d(off)

t

f

t

off

2010. 5. 7 7/7

KHB2D0N60P/F/F2

Revision No : 2

Fig17. Source - Drain Diode Reverse Recovery and dv /dt

0.8 V

DSS

I

F

10V

DUT

driver

V

GS

V

DS

I

S

I

SD

(DUT)

V

(DUT)

DS

Body Diode Forword Current

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

SD

Body Diode Forword Voltage drop

di/dt

V

DD