Page 1
2007. 3. 26 1/6
SEMICONDUCTOR
TECHNICAL DATA
KHB1D2N80D/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
Revision No : 1
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
·V
DSS
= 800V, ID= 1.2A
·Drain-Source ON Resistance :
R
DS(ON)
=16Ω(Max), @V
GS
= 10V
·Qg = 7.0nC(typ.)
MAXIMUM RATING (Ta=25℃℃)
* : Mounted on the minimum pad size recommended(PCB Mount)
CHARACTERISTIC SYMBOL
RATING
UNIT
KHB1D2N80D KHB1D2N80I
Drain-Source Voltage
V
DSS
800 V
Gate-Source Voltage
V
GSS
±30
V
Drain Current
@T
C
=25℃
I
D
1.2
A
@T
C
=100℃
0.75
Pulsed (Note1)
I
DP
4.8
Single Pulsed Avalanche Energy
(Note 2)
E
AS
130
mJ
Repetitive Avalanche Energy
(Note 1)
E
AR
5.0
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt 4.0
V/ns
Drain Power
Dissipation
Ta=25
℃
P
D
50 W
Derate above 25 0.36
W/℃
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Thermal Characteristics
Thermal Resistance, Junction-to-Case
R
thJC
2.5
℃/W
Thermal Resistance, Case-to-Sink
R
thCS
50
℃/W
Thermal Resistance, Junction-toAmbient
R
thJA
110
℃/W
KHB1D2N80D
KHB1D2N80I
H
G
FF
123
M
N
G
FF
123
A
C
O
A
C
K
D
B
J
E
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
K
H
D
B
E
L
IPAK(1)
D
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
MILLIMETERS
_
6.60 0.20+
_
6.10 0.20+
_
5.34 0.30+
_
0.70 0.20+
_
2.70 0.15
+
_
2.30 0.10
+
0.96 MAX
0.90 MAX
_
1.80 0.20+
_
2.30 0.10+
_
0.50 0.10
+
_
+
0.50 0.10
0.70 MIN
0.1 MAX
MILLIMETERS
_
+
6.6 0.2
_
6.1 0.2
+
_
5.34 0.3
+
_
0.7 0.2
+
_
9.3 0.3
+
_
2.3 0.2
+
_
0.76 0.1
+
_
2.3 0.1
+
_
0.5 0.1
+
_
1.8 0.2
+
_
0.5 0.1
+
_
1.0 0.1
+
0.96 MAX
_
1.02 0.3
+
L
N
M
J
P
G
S
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2007. 3. 26 2/6
KHB1D2N80D/I
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25℃℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250μA, V
GS
=0V
800 - - V
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
jID
=250μA, Referenced to 25℃
- 1.0 -
V/
℃
Gate Threshold Voltage
V
th
VDS=VGS, I
D
=250μA
3.0 3.75 5.0 V
Drain Cut-off Current
I
DSS
VDS=800V, VGS=0V,
--10
μA
V
DS
=640V, VGS=0V, T
C
= 125℃
- - 100
Gate Leakage Current
I
GSS
V
GS
=±30V, V
DS
=0V
--
±100
nA
Drain-Source ON Resistance
R
DS(ON)
VGS=10V, ID=0.6A
-1316
Ω
Dynamic
Total Gate Charge
Q
g
VDS=640V, ID=1.2A
V
GS
=10V (Note4,5)
- 7.0 -
nCGate-Source Charge
Q
gs
- 1.5 -
Gate-Drain Charge
Q
gd
- 4.0 -
Turn-on Delay time
t
d(on)
VDD=400V
R
G
=25Ω
ID=1.2A (Note4,5)
-35-
ns
Turn-on Rise time
t
r
-90-
Turn-off Delay time
t
d(off)
-40-
Turn-off Fall time
t
f
-90-
Input Capacitance
C
iss
VDS=25V, VGS=0V, f=1.0MHz
- 170 -
pF
Output Capacitance
C
oss
-25-
Reverse Transfer Capacitance
C
rss
-3-
Source-Drain Diode Ratings
Continuous Source Current
I
S
VGS<V
th
- - 1.2
A
Pulsed Source Current
I
SP
- - 4.8
Diode Forward Voltage
V
SD
IS= 1.2A, VGS=0V
- - 1.5 V
Reverse Recovery Time
t
rr
IS= 1.2A, VGS=0V,
dIs/dt=100A/
μs
- 300 - ns
Reverse Recovery Charge
Q
rr
- 600 -
μC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =170mH, I
S
=1.2A, VDD=50V, R
G
= 25Ω, Starting Tj=25℃.
Note 3) I
S
≤1.2A, dI/dt≤300A/㎲, VDD≤BV
DSS
, Starting T
j
=25℃.
Note 4) Pulse Test : Pulse width
≤ 300㎲, Duty Cycle ≤ 2%.
Note 5) Essentially independent of operating temperature.
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