Page 1
2007. 3. 26 1/6
SEMICONDUCTOR
TECHNICAL DATA
KHB1D0N60D/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
Revision No : 3
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
·V
DSS
= 600V, ID= 1.0A
·Drain-Source ON Resistance :
R
DS(ON)
=12Ω(Max), @V
GS
= 10V
·Qg(typ.) = 4.5nC
MAXIMUM RATING (Ta=25℃)
* : Drain current limited by maximum junction temperature.
CHARACTERISTIC SYMBOL
RATING
UNIT
KHB1D0N60D KHB1D0N60I
Drain-Source Voltage
V
DSS
600 V
Gate-Source Voltage
V
GSS
±30
V
Drain Current
@T
C
=25℃
I
D
1.0 1.0*
A
@T
C
=100℃
0.60 0.60*
Pulsed (Note1)
I
DP
3.0 3.0*
Single Pulsed Avalanche Energy
(Note 2)
E
AS
63
mJ
Repetitive Avalanche Energy
(Note 1)
E
AR
2.8
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt 5.5
V/ns
Drain Power
Dissipation
Ta=25
℃
P
D
28 28 W
Derate above 25 0.22 0.22
W/℃
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Thermal Characteristics
Thermal Resistance, Junction-to-Case
R
thJC
4.53 4.53
℃/W
Thermal Resistance, Case-to-Sink
R
thCS
50 50
℃/W
Thermal Resistance, Junction-toAmbient
R
thJA
110 110
℃/W
KHB1D0N60D
KHB1D0N60I
H
G
FF
123
M
N
G
FF
123
A
C
O
A
C
K
D
B
J
E
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
K
H
D
B
E
L
IPAK(1)
D
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
MILLIMETERS
_
6.60 0.20+
_
6.10 0.20+
_
5.34 0.30+
_
0.70 0.20+
_
2.70 0.15
+
_
2.30 0.10
+
0.96 MAX
0.90 MAX
_
1.80 0.20+
_
2.30 0.10+
_
0.50 0.10
+
_
+
0.50 0.10
0.70 MIN
0.1 MAX
MILLIMETERS
_
+
6.6 0.2
_
6.1 0.2
+
_
5.34 0.3
+
_
0.7 0.2
+
_
9.3 0.3
+
_
2.3 0.2
+
_
0.76 0.1
+
_
2.3 0.1
+
_
0.5 0.1
+
_
1.8 0.2
+
_
0.5 0.1
+
_
1.0 0.1
+
0.96 MAX
_
1.02 0.3
+
L
N
M
J
P
G
S
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2007. 3. 26 2/6
KHB1D0N60D/I
Revision No : 3
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250μA, V
GS
=0V
600 - - V
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
jID
=250μA, Referenced to 25℃
- 0.65 -
V/
℃
Drain Cut-off Current
I
DSS
VDS=600V, VGS=0V,
--10
μA
Gate Threshold Voltage
V
th
VDS=VGS, I
D
=250μA
2.0 - 4.0 V
Gate Leakage Current
I
GSS
V
GS
=±30V, V
DS
=0V
--
±100
nA
Drain-Source ON Resistance
R
DS(ON)
VGS=10V, ID=0.5A
- 9.5 12
Ω
Dynamic
Total Gate Charge
Q
g
VDS=480V, ID=1.0A
V
GS
=10V (Note4,5)
- 5.9 7.7
nCGate-Source Charge
Q
gs
- 1.0 -
Gate-Drain Charge
Q
gd
- 2.7 -
Turn-on Delay time
t
d(on)
VDD=300V
I
D
=1.0A
R
G
=25Ω (Note4,5)
-1030
ns
Turn-on Rise time
t
r
-2050
Turn-off Delay time
t
d(off)
-1645
Turn-off Fall time
t
f
-2560
Input Capacitance
C
iss
VDS=25V, VGS=0V, f=1.0MHz
- 155 200
pF
Output Capacitance
C
oss
-2026
Reverse Transfer Capacitance
C
rss
- 3.0 4.0
Source-Drain Diode Ratings
Continuous Source Current
I
S
VGS<V
th
- - 1.0
A
Pulsed Source Current
I
SP
- - 3.0
Diode Forward Voltage
V
SD
IS= 1.0A, VGS=0V
- - 1.4 V
Reverse Recovery Time
t
rr
IS= 1.0A, VGS=0V,
dIs/dt=100A/
μs
- 180 - ns
Reverse Recovery Charge
Q
rr
- 0.5 -
μC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =115mH, I
S
=1.0A, VDD=50V, R
G
= 25Ω, Starting Tj=25℃.
Note 3) I
S
≤1.0A, dI/dt≤300A/㎲, VDD≤BV
DSS
, Starting T
j
=25℃.
Note 4) Pulse Test : Pulse width
≤ 300㎲, Duty Cycle ≤ 2%.
Note 5) Essentially independent of operating temperature.
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Revision No : 3
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