Datasheet khb019n20f2 Datasheet

SEMICONDUCTOR

TECHNICAL DATA

KHB019N20P1/F1/F2

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

2010. 10. 27 1/7Revision No :1

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for DC/DC converters

and switching mode power supplies.

FEATURES

·V

DSS

=200V, ID=19A

·

Drain-Source ON Resistance : R

DS(ON)

=0.18Ω @V

GS

= 10V

·

Qg(typ.)=35nC

MAXIMUM RATING (Tc=25℃)

* : Drain current limited by maximum junction temperature.

CHARACTERISTIC SYMBOL

RATING

UNIT

KHB019N20P1

KHB019N20F1 KHB019N20F2

Drain-Source Voltage

V

DSS

200 V

Gate-Source Voltage

V

GSS

±30

V

Drain Current

@T

C

=25℃

I

D

19 19*

A

@T

C

=100℃

12.1 12.1*

Pulsed (Note1)

I

DP

76 76*

Single Pulsed Avalanche Energy (Note 2)

E

AS

250

mJ

Repetitive Avalanche Energy (Note 1)

E

AR

14

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt 4.5

V/ns

Drain Power Dissipation

Tc=25℃

P

D

140 50 W

Derate above 25℃

1.12 0.4

W/℃

Maximum Junction Temperature

T

j

150

℃

Storage Temperature Range

T

stg

-55～150

℃

Thermal Characteristics

Thermal Resistance, Junction-to-Case

R

thJC

0.89 2.5

℃/W

Thermal Resistance, Case-to-Sink

R

thCS

0.5 -

℃/W

Thermal Resistance, Junction-toAmbient

R

thJA

62.5 62.5

℃/W

DIM MILLIMETERS

TO-220AB

1.46

A

B

C

D

E

F

G

H

J

K

M

N

O

0.8 0.1

+

_

2.8 0.1

+

_

2.54 0.2

+

_

1.27 0.1

+

_

1.4 0.1

+

_

13.08 0.3

+

_

3.6 0.2

+

_

+

_

9.9 0.2

+

_

9.2 0.2

+

_

4.5 0.2

+

_

2.4 0.2

15.95 MAX

1.3+0.1/-0.05

0.5+0.1/-0.05

3.7

1.5

A

F

B

J

G

K

M

L

E

I

O

C

H

NN

Q

D

Q

P

1. GATE

2. DRAIN

3. SOURCE

123

PIN CONNECTION

DIM

MILLIMETERS

TO-220IS

0.76+0.09/-0.05

A

B

C

D

E

F

G

0.5+0.1/-0.05

H

1.2+0.25/-0.1

1.5+0.25/-0.1

J

K

L

M

N

P

Q

R

F

Q

1

2

3

L

P

N

B

G

J

M

D

N

H

E

R

K

L

S

0.5 Typ

S

D

A

C

1. GATE

2. DRAIN

3. SOURCE

10.0 0.3

+

_

15.0 0.3

+

_

2.70 0.3

+

_

Φ3.2 0.2

+

_

3.0 0.3

+

_

12.0 0.3

+

_

13.6 0.5

+

_

3.7 0.2

+

_

2.54 0.1

+

_

6.8 0.1

+

_

4.5 0.2

+

_

2.6 0.2

+

_

KHB019N20F1

KHB019N20F2

KHB019N20P1

D

S

G

E

K

L

D

Q

A

M

NN

123

F

O

B

G

J

H

1. GATE

2. DRAIN

3. SOURCE

TO-220IS (1)

C

DIM

MILLIMETERS

_

10.16 0.2

A

+ _

15.87 0.2

B

+

_

2.54 0.2

C

+

_

0.8 0.1

D

+

_

E

3.18 0.1

+

_

3.3 0.1

F

+

_

12.57 0.2

G

+

_

H

0.5 0.1

K

L

M

N

O

Q

R

J

+

13.0 MAX

_

3.23 0.1

+

1.47 MAX

_

2.54 0.2

+ _

6.68 0.2

+ _

+

4.7 0.2

_

2.76 0.2

+

R

KHB019N20P1/F1/F2

2010. 10. 27 2/7Revision No :1

ELECTRICAL CHARACTERISTICS (Tc=25℃)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage

BV

DSS

I

D

=250μA, V

GS

=0V

200 - - V

Breakdown Voltage Temperature Coefficient

ΔBV

DSS

/ΔT

jID

=250μA, Referenced to 25℃

- 0.18 -

V/℃

Drain Cut-off Current

I

DSS

VDS=200V, VGS=0V,

- - 10

μA

Gate Threshold Voltage

V

th

VDS=VGS, I

D

=250μA

2 - 4 V

Gate Leakage Current

I

GSS

V

GS

=±30V, V

DS

=0V

- -

±100

nA

Drain-Source ON Resistance

R

DS(ON)

VGS=10V, ID=9.5A

- 0.14 0.18

Ω

Dynamic

Total Gate Charge

Q

g

VDS=160V, ID=19A

V

GS

=10V (Note4,5)

- 35 44

nCGate-Source Charge

Q

gs

- 4.8 -

Gate-Drain Charge

Q

gd

- 18 -

Turn-on Delay time

t

d(on)

VDD=100V

R

L

=5Ω

R

G

=25Ω (Note4,5)

- 12 30

ns

Turn-on Rise time

t

r

- 33 70

Turn-off Delay time

t

d(off)

- 130 270

Turn-off Fall time

t

f

- 75 160

Input Capacitance

C

iss

VDS=25V, VGS=0V, f=1.0MHz

- 900 1170

pFReverse Transfer Capacitance

C

rss

- 213 277

Output Capacitance

C

oss

- 80 104

Source-Drain Diode Ratings

Continuous Source Current

I

S

VGS<V

th

- - 19 A

Pulsed Source Current

I

SP

- - 76

Diode Forward Voltage

V

SD

IS=19A, VGS=0V

- - 1.5 V

Reverse Recovery Time

t

rr

IS=19A, VGS=0V,

dIs/dt=100A/μ

s

- 215 - ns

Reverse Recovery Charge

Q

rr

- 2 -

μC

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 2) L =1mH, I

S

=19A, VDD=50V, R

G

=25Ω, Starting Tj=25℃.

Note 3) I

S

≤19A, dI/dt≤200A/㎲, VDD≤BV

DSS

, Starting T

j

=25℃.

Note 4) Pulse Test : Pulse width ≤

300㎲, Duty Cycle ≤ 2%.

Note 5) Essentially independent of operating temperature.

KHB019N20P1/F1/F2

2010. 10. 27 3/7Revision No :1

V

GS

TOP : 15.0 V

10.0 V

8.0 V

D

DSS

10

1.2

1

0

10

7.0 V

6.5 V

6.0 V

5.5 V

5.0 V Bottom : 4.5 V

-1

VGS = 0V

= 250

I

DS

(A)

Drain Current I

1.1

1.0

Fig1. ID - V

0

10

DS

1

10

Drain - Source Voltage VDS (V)

Fig3. BV

DSS

- T

j

(A)

1

D

10

150

25

0

10

Drain Current I

-1

10

0.8

(Ω)

0.6

DS(ON)

0.4

Fig2. ID - V

C

-55

GS

C

684102

Gate - Source Voltage VGS (V)

Fig4. R

DS(ON)

V

= 10V

GS

- I

D

0.9

0.8

Normalized Breakdown Voltage BV

-100 -50

050

Junction Temperature Tj ( )

(A)

S

Fig5. IS - V

1

10

0

10

150

C

25

C

SD

Reverse Drain Current I

-

1

10

0.0 0.4 0.8 2.01.2 1.6 2.4

C

100

150

0.2

On - Resistance R

0.0 0 1020 405030 60

Drain Current I

Fig6. R

3.0

V

= 10V

GS

= 9.5V

I

DS

2.5

2.0

1.5

1.0

0.5

Normalized On Resistance

0.0 0 50-100 -50 100 150

D

DS(ON)

(A)

- T

V

= 20V

GS

j

Source - Drain Voltage V

SD

(V)

Junction Temperature Tj ( )

C

KHB019N20P1/F1/F2

2010. 10. 27 4/7Revision No :1

5000

4500

4000

3500

3000

2500

C

oss

2000

1500

Capacitance (pF)

1000

500

0

-1

10

Drain - Source Voltage VDS (V)

2

10

(A)

D

1

10

0

10

Drain Current I

Tc= 25

C

T

= 150

j

Single nonrepetitive pulse

-1

10

0

10

C

Fig7. C - V

C

iss

C

rss

0

10

DS

Frequency = 1MHz

Fig9. Safe Operation Area

(KHB019N20P1)

Operation in this area is limited by R

1

10

Drain - Source Voltage V

DS(ON)

10

DS

1

2

(V)

100µs

1ms

10ms

DC

12

ID= 19A

10

(V)

GS

8

V

DS

6

4

2

Gate - Source Voltage V

0

Gate - Charge Qg (nC)

Fig10. Safe Operation Area

2

10

(A)

D

1

10

0

10

Drain Current I

Tc= 25

C

T

= -150

j

Single nonrepetitive pulse

-1

10

0

10

C

Drain - Source Voltage VDS (V)

Fig8. Qg- V

V

DS

= 40V

V

DS

= 100V

= 160V

GS

2010 40300

(KHB019N20F1, KHB019N20F2)

Operation in this area is limited by R

1

10

DS(ON)

10 µs

100 µs

1 ms

10 ms

DC

2

10

Fig11. ID - T

20

15

(A)

D

10

5

Drain Current I

0

25

50

75

Junction Temperature Tj ( )

100

j

150125

C

KHB019N20P1/F1/F2

2010. 10. 27 5/7Revision No :1

Fig12. Transient Thermal Response Curve

0

10

Duty=0.5

0.2

-1

10

0

.1

0.05

0.02

.01

0

Single

P

ul

-2

10

-5

10

Normalized Transient Thermal Resistance

se

-4

10

-3

-2

10

TIME (sec)

P

DM

- Duty Factor, D= t1/t

-1

10

t

1

t

2

0

10

1

10

Fig13. Transient Thermal Response Curve

0

10

Duty=0.5

0.2

-1

10

0

.1

0.05

0.02

-2

10

0.01

-5

10

Normalized Transient Thermal Resistance

Single Pulse

-4

10

-3

-2

10

TIME (sec)

P

DM

- Duty Factor, D= t1/t

-1

10

t

2

0

10

1

10

KHB019N20P1/F1/F2

2010. 10. 27 6/7Revision No :1

Fig14. Gate Charge

I

D

0.8 V

DSS

1.0 mA

V

Fig15. Single Pulsed Avalanche Energy

Fast Recovery Diode

GS

V

GS

10 V

I

D

V

DS

BV

DSS

Q

gs

EAS= LI

Q

gd

1

2

AS

2

BV

DSS

Q

DSS

- V

g

DD

Q

L

50V

25Ω

10 V

Fig16. Resistive Load Switching

0.5 V

DSS

25 Ω

10V

I

AS

I

(t)

V

DS

V

GS

DD

D

VDS(t)

Time

t

p

V

DS

90%

R

L

10%

V

GS

V

DS

V

GS

t

d(on)

t

r

t

on

t

d(off)

t

f

t

off

KHB019N20P1/F1/F2

2010. 10. 27 7/7Revision No :1

Fig17. Source - Drain Diode Reverse Recovery and dv /dt

0.8 V

DSS

I

F

10V

DUT

driver

V

GS

V

DS

I

S

I

SD

(DUT)

V

DS

(DUT)

Body Diode Forword Current

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

SD

Body Diode Forword Voltage drop

di/dt

V

DD