Datasheet kf9n25p-f Datasheet

2010. 12. 3 1/7

SEMICONDUCTOR

TECHNICAL DATA

KF9N25P/F

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

Revision No : 0

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for DC/DC Converters

and switching mode power supplies.

FEATURES

·V

DSS

= 250V, ID= 9.0A

·

Drain-Source ON Resistance : R

DS(ON)

=0.4Ω @V

GS

= 10V

·

Qg(typ) = 14.5nC

MAXIMUM RATING (Ta=25℃)

* : Drain current limited by maximum junction temperature.

CHARACTERISTIC SYMBOL

RATING

UNIT

KF9N25P KF9N25F

Drain-Source Voltage

V

DSS

250 V

Gate-Source Voltage

V

GSS

±30

V

Drain Current

@T

C

=25℃

I

D

9.0 9.0*

A

@T

C

=100℃

5.65 5.65*

Pulsed (Note1)

I

DP

25 25*

Single Pulsed Avalanche Energy (Note 2)

E

AS

180

mJ

Repetitive Avalanche Energy (Note 1)

E

AR

4.0

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt 4.5

V/ns

Drain Power Dissipation

Tc=25℃

P

D

83 38 W

Derate above 25℃

0.67 0.3

W/℃

Maximum Junction Temperature

T

j

150

℃

Storage Temperature Range

T

stg

-55～150

℃

Thermal Characteristics

Thermal Resistance, Junction-to-Case

R

thJC

1.5 3.3

℃/W

Thermal Resistance, Junction-toAmbient

R

thJA

62.5 62.5

℃/W

G

D

S

PIN CONNECTION

KF9N25P

KF9N25F

(KF9N25P, KF9N25F)

A

E

I

K

M

D

NN

123

E

K

L

D

NN

123

Q

* Single Gauge Lead Frame

L

A

M

F

G

B

Q

J

1. GATE

2. DRAIN

3. SOURCE

TO-220AB

F

O

B

G

J

H

1. GATE

2. DRAIN

3. SOURCE

O

C

P

H

C

R

DIM MILLIMETERS

A B C D E F G H

I

J

K

L M N O

P Q

DIM

15.95 MAX

1.3+0.1/-0.05

0.5+0.1/-0.05

13.08 0.3

MILLIMETERS

10.16 0.2

A

15.87 0.2

B

C

D

E

F

12.57 0.2

G

H

J

K

L

M

N

O

Q

R

_

9.9 0.2

+

_ +

0.8 0.1 _

3.6 0.2

+

_ +

2.8 0.1

3.7

1.5 _

+

1.46 _

+

1.4 0.1 _

+

1.27 0.1 _

+

2.54 0.2 _

+

4.5 0.2 _

+

2.4 0.2 _

9.2 0.2

+

_

+ _

+

_

2.54 0.2

+

_

0.8 0.1

+

_

3.18 0.1

+

_

3.3 0.1

+

_

+

_

0.5 0.1

+

_

13.0 0.5

+

_

3.23 0.1

+

1.47 MAX

_

2.54 0.2

+ _

6.68 0.2

+ _

+

4.7 0.2

_

2.76 0.2

+

TO-220IS (1)

2010. 12. 3 2/7

KF9N25P/F

Revision No : 0

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage

BV

DSS

I

D

=250㎂ , V

GS

=0V

250 - - V

Breakdown Voltage Temperature Coefficient

ΔBV

DSS

/ΔT

jID

=250㎂, Referenced to 25℃

- 0.22 -

V/℃

Drain Cut-off Current

I

DSS

VDS=250V, VGS=0V,

- - 10

㎂

Gate Threshold Voltage

V

th

VDS=VGS, I

D

=250㎂

2.5 - 4.5 V

Gate Leakage Current

I

GSS

V

GS

=±30V, V

DS

=0V

- -

±100

nA

Drain-Source ON Resistance

R

DS(ON)

VGS=10V, ID=4.5A

- 0.31 0.40

Ω

Dynamic

Total Gate Charge

Q

g

VDS=200V, ID=9A

V

GS

=10V (Note4,5)

- 14.5 -

nCGate-Source Charge

Q

gs

- 3.2 -

Gate-Drain Charge

Q

gd

- 6.3 -

Turn-on Delay time

t

d(on)

VDD=125V

I

D

=9A

R

G

=25Ω (Note4,5)

- 15 -

ns

Turn-on Rise time

t

r

- 25 -

Turn-off Delay time

t

d(off)

- 30 -

Turn-off Fall time

t

f

- 15 -

Input Capacitance

C

iss

VDS=25V, VGS=0V, f=1.0MHz

- 560 -

pF

Output Capacitance

C

oss

- 96 -

Reverse Transfer Capacitance

C

rss

- 15 -

Source-Drain Diode Ratings

Continuous Source Current

I

S

VGS<V

th

- - 9 A

Pulsed Source Current

I

SP

- - 36

Diode Forward Voltage

V

SD

IS=9A, VGS=0V

- - 1.4 V

Reverse Recovery Time

t

rr

IS=9A, VGS=0V,

dIs/dt=100A/㎲

- 160 - ns

Reverse Recovery Charge

Q

rr

- 0.95 -

μC

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 2) L=3.6mH, I

S

=9A, VDD=50V, R

G

=25Ω, Starting Tj=25℃.

Note 3) I

S

≤9A, dI/dt≤100A/㎲, VDD≤BV

DSS

, Starting T

j

=25℃.

Note 4) Pulse Test : Pulse width ≤

300㎲, Duty Cycle≤2%.

Note 5) Essentially independent of operating temperature.

Marking

1

KF9N25

001

P

1

2

KF9N25

001

F

2

1

PRODUCT NAME

2

LOT NO

2010. 12. 3 3/7

KF9N25P/F

Revision No : 0

100

(A)

D

10

1

Drain Current I

0.1

0.1 10

DSS

1.2

VGS = 0V

= 250

I

DS

1.1

1.0

Fig1. ID - V

DS

VGS=10V

VGS=7V

VGS=5V

1100

Drain - Source Voltage VDS (V)

Fig3. BV

DSS

- T

j

VDS=30V

1

10

(A)

D

0

10

Drain Current I

-1

10

1.2

1.0

(Ω)

0.8

DS(ON)

0.6

TC=100

Fig2. ID - V

C

25

GS

C

684102

Gate - Source Voltage VGS (V)

Fig4. R

DS(ON)

VGS=7V

- I

D

0.9

0.8

Normalized Breakdown Voltage BV

-100 -50

050

Junction Temperature Tj ( )

(A)

S

Fig5. IS - V

2

10

1

10

0

10

TC=100

SD

C

25

C

Reverse Drain Current I

-1

10

0.2 0.4 0.8 1.0 1.20.6 1.4 1.6 1.8

C

100

150

0.4

0.2

On - Resistance R

0

01682412420

Drain Current I

3.0

2.5

V I

GS

DS

=10V

= 4.5A

Fig6. R

DS(ON)

VGS=10V

(A)

D

- T

j

2.0

1.5

1.0

0.5

Normalized On Resistance

0.0 0 50-100 -50 100 150

Source - Drain Voltage V

SD

(V)

Junction Temperature Tj ( )

C

2010. 12. 3 4/7

KF9N25P/F

Revision No : 0

4

10

3

10

2

10

Capacitance (pF)

1

10

Fig 7. C - V

DS

0 5 15 25 3510 20 30 40

Drain - Source Voltage VDS (V)

Fig9. Safe Operation Area

2

10

Operation in this

(A)

D

area is limited by R

1

10

0

10

DS(ON)

C

iss

C

oss

C

rss

(KF9N25P)

10µs

100µs

1ms

10ms

12

ID=9A

10

(V)

GS

8

6

4

2

Gate - Source Voltage V

0

2

0

4

Fig10. Safe Operation Area

2

10

Operation in this area is limited by R

1

10

(A)

D

0

10

Fig8. Qg- V

Gate - Charge

DS(ON)

GS

10812

Qg (nC)

V

= 200V

DS

14 166

(KF9N25F)

10µs

100µs

1ms

10ms

-1

10

Drain Current I

2

10

Tc= 25 Tj = 150 Single pulse

0

12

10

(A)

8

D

6

4

Drain Current I

2

0

C

1

10

Drain - Source Voltage V

Fig11. ID - T

75 15012550 10025

DC

2

10

(V)

DS

3

10

-1

10

Drain Current I

2

10

Tc= 25 Tj = 150 Single pulse

0

C

1

10

Drain - Source Voltage V

2

10

DS

(V)

DC

3

10

j

Junction Temperature Tj ( )

C

2010. 12. 3 5/7

KF9N25P/F

Revision No : 0

Fig12. Transient Thermal Response Curve

-1

10

0

Duty=0.5

10

0.2

0.1

0.05

-1

10

0.02

01

0.

e Pulse

ingl

Transient Thermal Resistance

S

-2

10

-5

10

-4

10

P

DM

- Duty Factor, D= t1/t

- R

10

-3

-2

10

-1

10

TIME (sec)

Fig13. Transient Thermal Response Curve

thJC

(KF9N25P)

t

1

T

j(max)

=

P

0

10

t

2

- T

c

D

1

10

-1

10

Duty=0.

5

0

10

0.2

0.1

0.05

0.02

-1

10

0.01

Transient Thermal Resistance

Single Pulse

-2

10

-5

10

-4

10

-3

-2

10

TIME (sec)

P

DM

- Duty Factor, D= t1/t

- R

-1

10

thJC

(KF9N25F)

t

1

T

j(max)

=

P

0

10

t

2

- T

c

D

1

10

2010. 12. 3 6/7

KF9N25P/F

Revision No : 0

Fig14. Gate Charge

V

GS

Fast Recovery Diode

0.8 V

DSS

I

D

1.0 mA

V

GS

Fig15. Single Pulsed Avalanche Energy

50V

10 V

I

D

V

DS

BV

DSS

Q

gs

EAS= LI

Q

gd

1

2

AS

2

BV

DSS

Q

- V

g

DSS

DD

Q

L

I

AS

25Ω

10 V

Fig16. Resistive Load Switching

0.5 V

DSS

25 Ω

10V

I

(t)

V

DS

V

GS

V

DD

D

VDS(t)

Time

t

p

V

DS

90%

R

L

10%

V

GS

t

V

DS

V

GS

t

d(on)

t

r

on

t

d(off)

t

f

t

off

2010. 12. 3 7/7

KF9N25P/F

Revision No : 0

Fig17. Source - Drain Diode Reverse Recovery and dv /dt

0.5 V

DSS

I

F

10V

DUT

driver

V

GS

V

DS

I

S

I

SD

(DUT)

V

(DUT)

DS

Body Diode Forword Current

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

SD

Body Diode Forword Voltage drop

di/dt

V

DD