Page 1
2011. 6. 21 1/6
SEMICONDUCTOR
TECHNICAL DATA
KF9N25D
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
Revision No : 0
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC Converters
and switching mode power supplies.
FEATURES
·V
DSS
= 250V, ID= 7.5A
·Drain-Source ON Resistance : R
DS(ON)
=0.4Ω @V
GS
= 10V
·Qg(typ) = 14.5nC
MAXIMUM RATING (Ta=25℃)
* : Drain current limited by maximum junction temperature.
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
V
DSS
250 V
Gate-Source Voltage
V
GSS
±30
V
Drain Current
@T
C
=25℃
I
D
7.5
A
@T
C
=100℃
4.74
Pulsed (Note1)
I
DP
25
Single Pulsed Avalanche Energy
(Note 2)
E
AS
126
mJ
Repetitive Avalanche Energy
(Note 1)
E
AR
4.0
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt 4.5
V/ns
Drain Power
Dissipation
Tc=25℃
P
D
54.3 W
Derate above 25℃
0.43
W/℃
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Thermal Characteristics
Thermal Resistance, Junction-to-Case
R
thJC
2.3
℃/W
Thermal Resistance, Junction-toAmbient
R
thJA
110
℃/W
G
D
S
PIN CONNECTION
H
A
C
J
G
FF
K
D
B
E
L
M
DIM
MILLIMETERS
_
A
6.60 0.20+
_
6.10 0.20+
B
_
5.34 0.30+
C
_
D
0.70 0.20+
_
E
2.70 0.15
+
_
2.30 0.10
+
F
0.96 MAX
G
0.90 MAX
H
_
1.80 0.20+
J
_
2.30 0.10+
K
N
_
0.50 0.10
L
+
_
+
M
0.50 0.10
0.70 MIN
N
0.1 MAX
O
123
O
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
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2011. 6. 21 2/6
KF9N25D
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250㎂ , V
GS
=0V
250 - - V
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
jID
=250㎂, Referenced to 25℃
- 0.22 -
V/℃
Drain Cut-off Current
I
DSS
VDS=250V, VGS=0V,
- - 10
㎂
Gate Threshold Voltage
V
th
VDS=VGS, I
D
=250㎂
2.5 - 4.5 V
Gate Leakage Current
I
GSS
V
GS
=±30V, V
DS
=0V
- -
±100
nA
Drain-Source ON Resistance
R
DS(ON)
VGS=10V, ID=3.75A
- 0.31 0.40
Ω
Dynamic
Total Gate Charge
Q
g
VDS=200V, ID=9A
V
GS
=10V (Note4,5)
- 14.5 -
nCGate-Source Charge
Q
gs
- 3.2 -
Gate-Drain Charge
Q
gd
- 6.3 -
Turn-on Delay time
t
d(on)
VDD=125V
I
D
=9A
R
G
=25Ω (Note4,5)
- 15 -
ns
Turn-on Rise time
t
r
- 25 -
Turn-off Delay time
t
d(off)
- 30 -
Turn-off Fall time
t
f
- 15 -
Input Capacitance
C
iss
VDS=25V, VGS=0V, f=1.0MHz
- 560 -
pF
Output Capacitance
C
oss
- 96 -
Reverse Transfer Capacitance
C
rss
- 15 -
Source-Drain Diode Ratings
Continuous Source Current
I
S
VGS<V
th
- - 9
A
Pulsed Source Current
I
SP
- - 36
Diode Forward Voltage
V
SD
IS=7.5A, VGS=0V
- - 1.4 V
Reverse Recovery Time
t
rr
IS=9A, VGS=0V,
dIs/dt=100A/
㎲
- 160 - ns
Reverse Recovery Charge
Q
rr
- 0.95 -
μC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=3.6mH, I
S
=7.5A, VDD=50V, R
G
=25Ω, Starting Tj=25℃.
Note 3) I
S
≤9A, dI/dt≤100A/㎲, VDD≤BV
DSS
, Starting T
j
=25℃.
Note 4) Pulse Test : Pulse width
≤300㎲, Duty Cycle≤2%.
Note 5) Essentially independent of operating temperature.
Marking
1
KF9N25
001
D
2
1
PRODUCT NAME
2
LOT NO
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2011. 6. 21 3/6
KF9N25D
Revision No : 0
100
(A)
D
10
1
Drain Current I
0.1
0.1 10
DSS
1.2
VGS = 0V
= 250
I
DS
1.1
1.0
Fig1. ID - V
DS
VGS=10V
VGS=7V
VGS=5V
1100
Drain - Source Voltage VDS (V)
Fig3. BV
DSS
- T
j
VDS=30V
1
10
(A)
D
0
10
Drain Current I
-1
10
1.2
1.0
(Ω)
0.8
DS(ON)
0.6
TC=100
Fig2. ID - V
C
25
GS
C
684102
Gate - Source Voltage VGS (V)
Fig4. R
DS(ON)
VGS=7V
- I
D
0.9
0.8
Normalized Breakdown Voltage BV
-100 -50
050
Junction Temperature Tj ( )
(A)
S
Fig5. IS - V
2
10
1
10
0
10
TC=100
SD
C
25
C
Reverse Drain Current I
-1
10
0.2 0.4 0.8 1.0 1.20.6 1.4 1.6 1.8
100
C
150
0.4
0.2
On - Resistance R
0
01682412420
Drain Current I
3.0
2.5
V
GS
I
DS
=10V
= 3.75A
Fig6. R
DS(ON)
VGS=10V
(A)
D
- T
j
2.0
1.5
1.0
0.5
Normalized On Resistance
0.0
0 50-100 -50 100 150
Source - Drain Voltage V
SD
(V)
Junction Temperature Tj ( )
C
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2011. 6. 21 4/6
KF9N25D
Revision No : 0
)
4
10
3
10
2
10
Capacitance (pF)
1
10
Fig 7. C - V
DS
0 5 15 25 3510 20 30 40
Drain - Source Voltage VDS (V)
Fig9. Safe Operation Area
2
10
Operation in this
(A)
D
area is limited by R
1
10
0
10
DS(ON)
10µs
100µs
1ms
10ms
Fig8. Qg- V
12
ID=9A
10
(V)
GS
C
iss
8
GS
6
V
= 200V
C
oss
C
rss
4
2
Gate - Source Voltage V
0
2
0
4
Gate - Charge
10812
Qg (nC)
Fig10. ID - T
DS
14 166
j
12
10
(A)
8
D
6
-1
10
Drain Current I
2
10
10
Tc= 25
Tj = 150
Single pulse
0
C
C
1
10
2
10
Drain - Source Voltage V
1
10
Duty=0.5
0
10
0.2
0.1
5
0.0
-1
10
0.02
0.01
e
Transient Thermal Resistance
Single Puls
-2
10
-5
10
DC
Drain Current I
3
10
(V)
DS
Fig11. Transient Thermal Response Curve
-4
10
-3
10
-2
10
4
2
0
P
DM
- Duty Factor, D= t1/t
- R
-1
10
75 15012550 10025
Junction Temperature Tj ( )
t
1
t
2
2
- T
T
j(max)
thJC
=
0
10
c
P
D
1
10
C
TIME (sec
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2011. 6. 21 5/6
KF9N25D
Revision No : 0
Fig12. Gate Charge
V
GS
Fast
Recovery
Diode
0.8 V
DSS
I
D
1.0 mA
V
GS
Fig13. Single Pulsed Avalanche Energy
50V
10 V
I
D
V
DS
BV
DSS
Q
gs
EAS= LI
Q
gd
1
2
AS
2
BV
BV
DSS
Q
- V
g
DSS
DD
Q
L
I
AS
25Ω
10 V
Fig14. Resistive Load Switching
0.5 V
DSS
25 Ω
10V
I
(t)
V
DS
V
GS
V
DD
D
VDS(t)
Time
t
p
V
DS
90%
R
L
10%
V
GS
t
t
r
V
DS
V
GS
d(on)
t
on
t
d(off)
t
f
t
off
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2011. 6. 21 6/6
KF9N25D
Revision No : 0
Fig15. Source - Drain Diode Reverse Recovery and dv /dt
0.5 V
DSS
I
F
10V
DUT
driver
V
GS
V
DS
I
S
I
SD
(DUT)
V
(DUT)
DS
Body Diode Forword Current
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
Body Diode Forword Voltage drop
di/dt
V
DD
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