Page 1
2011. 1. 27 1/7
SEMICONDUCTOR
TECHNICAL DATA
KF8N60P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
Revision No : 0
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
·V
DSS
=600V, ID=8A
·
Drain-Source ON Resistance :
R
DS(ON)
(Max)=1.05Ω @V
GS
=10V
·
Qg(typ.)= 22nC
MAXIMUM RATING (Tc=25℃)
* : Drain current limited by maximum junction temperature.
CHARACTERISTIC
SYMBOL
RATING
UNIT
KF8N60P KF8N60F
Drain-Source Voltage
V
DSS
600 V
Gate-Source Voltage
V
GSS
±30
V
Drain Current
@T
C
=25℃
I
D
8 8*
A
@T
C
=100℃
5 5*
Pulsed (Note1)
I
DP
18 18*
Single Pulsed Avalanche Energy
(Note 2)
E
AS
230
mJ
Repetitive Avalanche Energy
(Note 1)
E
AR
14.7
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt 4.5
V/ns
Drain Power
Dissipation
Tc=25℃
P
D
160 52 W
Derate above 25℃
1.28 0.42
W/℃
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Thermal Characteristics
Thermal Resistance, Junction-to-Case
R
thJC
0.78 2.4
℃/W
Thermal Resistance,
Junction-to-Ambient
R
thJA
62.5 62.5
℃/W
PIN CONNECTION
KF8N60P
KF8N60F
E
I
K
D
E
K
L
D
Q
A
M
NN
123
A
M
NN
123
F
G
B
Q
L
J
1. GATE
2. DRAIN
3. SOURCE
TO-220AB
F
B
G
J
O
C
P
H
C
O
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
15.95 MAX
1.3+0.1/-0.05
0.5+0.1/-0.05
13.08 0.3
1.4 0.1
1.27 0.1
2.54 0.2
4.5 0.2
2.4 0.2
9.2 0.2
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
Q
R
_
9.9 0.2
+
_
+
0.8 0.1
_
3.6 0.2
+
_
+
2.8 0.1
3.7
1.5
_
+
1.46
_
+
_
+
_
+
_
+
_
+
_
+
MILLIMETERS
_
10.16 0.2
+
_
15.87 0.2
+
_
2.54 0.2
+
_
0.8 0.1
+
_
3.18 0.1
+
_
3.3 0.1
+
_
12.57 0.2
+
_
0.5 0.1
+
_
13.0 0.5
+
_
3.23 0.1
+
1.47 MAX
1.47 MAX
_
2.54 0.2
+
_
6.68 0.2
+
_
+
4.7 0.2
_
2.76 0.2
+
TO-220IS (1)
G
D
S
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2011. 1. 27 2/7
KF8N60P/F
Revision No : 0
ELECTRICAL CHARACTERISTICS (Tc=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250μA, V
GS
=0V
600 - - V
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
jID
=250μA, Referenced to 25℃
- 0.65 -
V/℃
Drain Cut-off Current
I
DSS
VDS=600V, VGS=0V
- - 10
μA
Gate Threshold Voltage
V
th
VDS=VGS, I
D
=250μA
2.5 - 4.5 V
Gate Leakage Current
I
GSS
V
GS
=±30V, V
DS
=0V
- -
±100
nA
Drain-Source ON Resistance
R
DS(ON)
VGS=10V, ID=4A
- 0.85 1.05
Ω
Dynamic
Total Gate Charge
Q
g
VDS=480V, ID=8A
V
GS
=10V (Note4,5)
- 22 -
nCGate-Source Charge
Q
gs
- 5 -
Gate-Drain Charge
Q
gd
- 8 -
Turn-on Delay time
t
d(on)
VDD=300V
I
D
=8A
R
G
=25Ω (Note4,5)
- 45 -
ns
Turn-on Rise time
t
r
- 35 -
Turn-off Delay time
t
d(off)
- 75 -
Turn-off Fall time
t
f
- 30 -
Input Capacitance
C
iss
VDS=25V, VGS=0V, f=1.0MHz
- 1000 -
pF
Output Capacitance
C
oss
- 115 -
Reverse Transfer Capacitance
C
rss
- 8 -
Source-Drain Diode Ratings
Continuous Source Current
I
S
VGS<V
th
- - 8
A
Pulsed Source Current
I
SP
- - 32
Diode Forward Voltage
V
SD
IS=8.0A, VGS=0V
- - 1.4 V
Reverse Recovery Time
t
rr
IS=8.0A, VGS=0V,
dIs/dt=100A/μ
s
- 400 - ns
Reverse Recovery Charge
Q
rr
- 4.1 -
μC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =6.7mH, I
S
=8A, VDD=50V, R
G
=25Ω, Starting Tj=25℃.
Note 3) I
S
≤8.0A, dI/dt≤200A/㎲, VDD≤BV
DSS
, Starting T
j
=25℃.
Note 4) Pulse Test : Pulse width ≤
300㎲, Duty Cycle ≤ 2%.
Note 5) Essentially independent of operating temperature.
Marking
1
KF8N60
801
P
1
KF8N60
F
2
813
2
1
PRODUCT NAME
2
LOT NO
Page 3
2011. 1. 27 3/7
KF8N60P/F
Revision No : 0
Fig1. ID - V
100
(A)
D
10
1
Drain Current I
0.1
0.1 10
DSS
1.2
VGS = 0V
= 250
I
DS
1.1
1.0
0.9
0.8
Normalized Breakdown Voltage BV
-100 -50
1100
Drain - Source Voltage VDS (V)
Fig3. BV
DSS
050
Junction Temperature Tj ( )
DS
VGS=10V, 7V
- T
j
VGS=5V
100
C
150
(A)
D
10
10
VDS=20V
1
0
Fig2. ID - V
25
GS
C
Drain Current I
100
C
-1
10
684102
Gate - Source Voltage VGS (V)
Fig4. R
2.4
2.0
(Ω)
1.6
DS(ON)
1.2
0.8
0.4
On - Resistance R
0
084126210
Drain Current I
DS(ON)
- I
D
D
VGS=7V
VGS=10V
(A)
Fig5. IS - V
2
10
(A)
S
1
10
100
0
10
Reverse Drain Current I
-1
10
0.2 0.4 0.8 1.0 1.20.6 1.4 1.6 1.8
C
Source - Drain Voltage V
SD
3.0
V
GS
= 4A
I
DS
2.5
2.0
1.5
25
C
(V)
SD
1.0
0.5
Normalized On Resistance
0.0
Fig6. R
=10V
0 50-100 -50 100 150
Junction Temperature Tj ( )
DS(ON)
- T
j
C
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2011. 1. 27 4/7
KF8N60P/F
Revision No : 0
Fig 7. C - V
4
10
3
10
2
10
Capacitance (pF)
1
10
0
10
01052015 30 3525 40
DS
Drain - Source Voltage VDS (V)
Fig9. Safe Operation Area
2
10
Operation in this
(A)
D
area is limited by R
1
10
DS(ON)
C
iss
C
oss
C
rss
(KF8N60P)
10µs
100µs
1ms
12
ID=8A
(V)
GS
10
8
V
6
4
2
Gate - Source Voltage V
0
4
0
8
Gate - Charge
Fig10. Safe Operation Area
2
10
Operation in this
area is limited by R
(A)
1
10
D
Fig8. Qg- V
= 480V
DS
DS(ON)
GS
201624
Qg (nC)
28 3212
(KF8N60F)
10µs
100µs
1ms
0
10
Drain Current I
Tc= 25
Tj = 150
Single nonrepetitive pulse
-1
10
0
10
10
8
(A)
D
6
4
Drain Current I
2
0
025
C
C
1
10
Drain - Source Voltage V
Fig11. ID - T
50
75
DC
10
j
100
10ms
0
10
Drain Current I
2
(V)
DS
3
10
Tc= 25
C
C
Tj = 150
Single nonrepetitive pulse
-1
10
0
10
Drain - Source Voltage V
1
10
10
DC
10ms
2
(V)
DS
3
10
150125
Junction Temperature Tj ( )
C
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2011. 1. 27 5/7
KF8N60P/F
Revision No : 0
Fig12. Transient Thermal Response Curve
0
10
Duty=0.5
0.2
0.1
-1
10
0.05
0.02
0.01
Transient Thermal Resistance
-2
10
-5
10
1
10
Single Pulse
-4
10
P
-3
10
-2
10
-1
10
TIME (sec)
Fig13. Transient Thermal Response Curve
(KF8N60P)
DM
- Duty Factor, D= t1/t
t
1
t
2
0
10
(KF8N60sF)
2
1
10
Duty=0.5
0
10
0.2
0
.1
0.05
-1
10
0.02
0.01
-2
10
-5
10
Single Pulse
-4
10
10
Normalized Transient Thermal Resistance
-3
-2
10
TIME (sec)
P
DM
- Duty Factor, D= t1/t
-1
10
t
1
t
2
2
0
10
1
10
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2011. 1. 27 6/7
KF8N60P/F
Revision No : 0
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2011. 1. 27 7/7
KF8N60P/F
Revision No : 0
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