Datasheet kf80n08p_f Datasheet

2008. 6. 19 1/7

SEMICONDUCTOR

TECHNICAL DATA

KF80N08P/F

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

Revision No : 0

General Description

It s mainly suitable for low voltage applications such as automotive,

DC/DC converters and a load switch in battery powered applications

FEATURES

V

DSS

= 75V, ID= 80A

Drain-Source ON Resistance :

R

DS(ON)

=10m (Max.) @VGS= 10V

MAXIMUM RATING (Tc=25 )

* : Drain current limited by maximum junction temperature.

CHARACTERISTIC

SYMBOL

RATING

UNIT

KF80N08P KF80N08F

Drain-Source Voltage

V

DSS

75 V

Gate-Source Voltage

V

GSS

20

V

Drain Current

@TC=25

I

D

80 56

A

@TC=100

76 39

Pulsed (Note1)

I

DP

320 224

Single Pulsed Avalanche Energy (Note 2)

E

AS

1200

mJ

Repetitive Avalanche Energy (Note 1)

E

AR

18

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt 4.5

V/ns

Drain Power Dissipation

Tc=25

P

D

230 62.5 W

Derate above 25

1.54 0.42

W/

Maximum Junction Temperature

T

j

175

Storage Temperature Range

T

stg

-55 175

Thermal Characteristics

Thermal Resistance, Junction-to-Case

R

thJC

0.65 2.4

/W

Thermal Resistance, Junction-to-Ambient

R

thJA

62.5 62.5

/W

PIN CONNECTION

KF80N08P

KF80N08F

E

I

K

D

E

K

L

D

Q

A

M

NN

123

A

M

NN

123

F

G

B

Q

L

J

1. GATE

2. DRAIN

3. SOURCE

TO-220AB

F

B

G

J

O

C

P

H

C

O

R

H

1. GATE

2. DRAIN

3. SOURCE

DIM MILLIMETERS

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

15.95 MAX

1.3+0.1/-0.05

0.5+0.1/-0.05

13.08 0.3

1.4 0.1

1.27 0.1

2.54 0.2

4.5 0.2

2.4 0.2

9.2 0.2

DIM

A

B

C

D

E

F

G

H

J

K

L

M

N

O

Q

R

_

9.9 0.2

+

_

+

0.8 0.1 _

3.6 0.2

+

_

+

2.8 0.1

3.7

1.5 _

+

1.46 _

+

_

+ _

+

_

+ _

+

MILLIMETERS

_

10.16 0.2

+ _

15.87 0.2

+

_

2.54 0.2

+

_

0.8 0.1

+

_

3.18 0.1

+

_

3.3 0.1

+

_

12.57 0.2

+

_

0.5 0.1

+

_

13.0 0.5

+

_

3.23 0.1

+

1.47 MAX

_

2.54 0.2

+ _

6.68 0.2

+ _

+

4.7 0.2

_

2.76 0.2

+

TO-220IS (1)

G

D

S

2008. 6. 19 2/7

KF80N08P/F

Revision No : 0

ELECTRICAL CHARACTERISTICS (Tc=25 )

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage

BV

DSS

ID=250 A, VGS=0V

75 - - V

Breakdown Voltage Temperature Coefficient

BV

DSS

/ TjID=250 A, Referenced to 25

- 0.11 -

V/

Drain Cut-off Current

I

DSS

VDS=75V, VGS=0V,

- - 10

A

Gate Threshold Voltage

V

th

VDS=VGS, ID=250 A

2 - 4 V

Gate Leakage Current

I

GSS

VGS= 20V, VDS=0V

- -

100

nA

Drain-Source ON Resistance

R

DS(ON)

VGS=10V, ID=40A

- 8.5 10.0

m

Dynamic

Total Gate Charge

Q

g

VDS=60V, ID=80A

V

GS

=10V (Note4,5)

- 107 -

nCGate-Source Charge

Q

gs

- 20 -

Gate-Drain Charge

Q

gd

- 47 -

Turn-on Delay time

t

d(on)

VDD=37.5V

I

D

=80A

R

G

=25 (Note4,5)

- 63 -

ns

Turn-on Rise time

t

r

- 228 -

Turn-off Delay time

t

d(off)

- 217 -

Turn-off Fall time

t

f

- 150 -

Input Capacitance

C

iss

VDS=25V, VGS=0V, f=1.0MHz

- 3860 -

pF

Output Capacitance

C

oss

- 840 -

Reverse Transfer Capacitance

C

rss

- 175 -

Source-Drain Diode Ratings

Continuous Source Current

I

S

VGS<V

th

- - 80 A

Pulsed Source Current

I

SP

- - 320

Diode Forward Voltage

V

SD

IS=80A, VGS=0V

- - 1.5 V

Reverse Recovery Time

t

rr

IS=80A, VGS=0V,

dIs/dt=100A/

s

- 114 - ns

Reverse Recovery Charge

Q

rr

- 610 -

C

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 2) L =138

H, IS=80A, VDD=50V, RG=25 , Starting Tj=25 .

Note 3) I

S

7.0A, dI/dt 200A/ , VDDBV

DSS

, Starting Tj=25 .

Note 4) Pulse Test : Pulse width

300 , Duty Cycle 2%.

Note 5) Essentially independent of operating temperature.

Marking

1

KF80N08

701

P

1

KF80N08

2

F

713

2

1

PRODUCT NAME

2

LOT NO

2008. 6. 19 3/7

KF80N08P/F

Revision No : 0

Fig1. ID - V

1000

VGS=8V, 10V

(A)

D

100

10

Drain Current I

1

0.1 10

Drain - Source Voltage VDS (V)

Fig3. BV

DSS

1.3

VGS = 0V

= 250

I

DS

1.2

DS

1000

VGS=7V

VGS=6V

VGS=5V

(A)

D

100

10

Drain Current I

1

1100

- T

DSS

j

379

14

(mΩ)

12

Fig2. ID - V

VDS = 15V

100

C

25

C

5

Gate - Source Voltage VGS (V)

Fig4. R

DS(ON)

GS

- I

D

1.1

1.0

0.9

0.8

Normalized Breakdown Voltage BV

-50

050

Junction Temperature Tj ( )

Fig5. IS - V

100

(A)

S

100

C

10

25

C

100

SD

DS(ON)

10

VGS=10V

8

On - Resistance R

200150

C

6

01006020 40 80 120 140

D

- T

(A)

C

1.8

1.6

1.4

1.2

1.0

V I

GS

D

=10V

= 40A

Drain Current I

Fig6. R

DS(ON)

0.8

Reverse Drain Current I

1

0.4 0.8 1 1.20.6 1.4

Source - Drain Voltage V

SD

(V)

Normalized On Resistance

0.6 0 25 50 75 100 125-50 -25 150 175

Junction Temperature Tc ( )

C

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KF80N08P/F

Revision No : 0

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KF80N08P/F

Revision No : 0

2008. 6. 19 6/7

KF80N08P/F

Revision No : 0

Fig14. Gate Charge

V

GS

Fast Recovery Diode

0.8 V

DSS

I

D

1.0 mA

V

GS

Fig15. Single Pulsed Avalanche Energy

50V

10 V

I

D

V

DS

BV

DSS

Q

gs

EAS= LI

Q

gd

1

2

AS

2

BV

DSS

Q

DSS

- V

g

DD

Q

L

I

AS

25Ω

10 V

Fig16. Resistive Load Switching

0.5 V

DSS

25 Ω

10V

I

(t)

V

DS

V

GS

V

DD

D

VDS(t)

Time

t

p

V

DS

90%

R

L

10%

V

GS

t

V

DS

V

GS

t

d(on)

t

r

on

t

d(off)

t

f

t

off

2008. 6. 19 7/7

KF80N08P/F

Revision No : 0

Fig17. Source - Drain Diode Reverse Recovery and dv /dt

0.8 V

DSS

I

F

10V

DUT

driver

V

GS

V

DS

I

S

I

SD

(DUT)

V

(DUT)

DS

Body Diode Forword Current

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

SD

Body Diode Forword Voltage drop

di/dt

V

DD